Abstract: A method is provided for producing a novel index-guided laser or laser array by MOCVD in a single growth step. A ridge or a number of ridges are first fabricated by dry or wet etching on a GaAs wafer; and n-and p-type epitaxial layers including cladding layers and an active layer are then grown on the entire wafer surface, forming the laser structure. One or more current blocking layers are incorporated into an upper cladding layer which is grown after the active layer. Due to migration-enhanced dopant incorporation and dopant diffusion during the growth, the current blocking layer is rendered ineffective in the vicinity of the ridges, thus forming a laterally restricted current path for carrier injection. The laser is index-guided on the ridges. This laser structure is extremely simple to produce since it requires no further photolithographic masking steps after growth, only metallization.

Abstract: A low-pressure, low-temperature organometallic chemical vapor deposition (OM-CVD) method for depositing a doped epitaxial layer of a II-VI compound, such as, n-ZnSe, on a substrate in the deposition zone of an OM-CVD reactor. For example, low-resistivity n-type ZnSe with p<0.05.OMEGA..cm and n>10.sup.17 cm.sup.-3 may be grown epitaxially on (100) GaAs substrates by this method using aluminum as a dopant from a triethylaluminum source. The as-grown layers show a strong near-bandgap photoluminescence peak. The much weaker photoluminescence intensity at longer wavelength indicates that the concentration of deep centers is lower than in doped ZnSe prepared by other prior art methods. Also, no further or post treatment (diffusion or annealing) after growth is necessary.

Abstract: A semiconductor injection laser is mounted on a silicon substrate. An optical detector in the form of a Schottky barrier is integral to the substrate and aligned to detect a portion of the light from one of the light emitting facets of the laser. The detector is connected to the current control circuit for the laser to provide a feedback signal which is proportional to the light deflected from the facet. The feedback signal provides an input to the control circuit to adjust the operating current of the laser to provide a predetermined and maintained optical power output level. Means are provided for enhancing light collecting efficiency. The connection of the laser and detector to the control circuit is accomplished in a manner so that the operating current of the laser does not electrically interfere with the electrical operation of the detector. The control circuit may be provided on the substrate employing VLSI technology.