Abstract: A light-emitting semiconductor component has a number of layers that predominantly contain elements of groups II and VI of the Periodic Table. The layers are applied epitaxially on a substrate, preferably made of InP, and include a p-doped covering layer and an n-doped covering layer having lattice constants of which correspond to that of the substrate. An undoped active layer lies between the two covering layers. The active layer forms a quantum well structure in interaction with its neighboring layers, a lattice constant of the active layer being made smaller than that of the neighboring layers.