Abstract: A method for measuring the relative local position error of one of the sections of an object that is exposed section by section, in particular of a lithography mask or of a wafer, is provided, each exposed section having a plurality of measurement marks, wherein a) a region of the object which is larger than the one section is imaged in magnified fashion and is detected as an image, b) position errors of the measurement marks contained in the detected image are determined on the basis of the detected image, c) corrected position errors are derived by position error components which are caused by the magnified imaging and detection being extracted from the determined position errors of the measurement marks, d) the relative local position error of the one section is derived on the basis of the corrected position errors of the measurement marks.

Abstract: The invention relates to a mask inspection method that can be used for the design and production of masks, in order to detect relevant weak points early on and to correct the same. According to said method for mask inspection, an aerial image simulation, preferably an all-over aerial image simulation, is carried out on the basis of the mask design converted into a mask layout, in order to determine a list of hot spots. The mask/test mask is analysed by means of an AIMS tool, whereby real aerial images are produced and compared with the simulated aerial images. The determined differences between the aerial images are used to improve the mask design. The inventive arrangement enables a method to be carried out for mask inspection for mask design and mask production. The use of the AIMS tool directly in the mask production process essentially accelerates the mask production, while reducing the error rate and cost.

Abstract: A method for measuring the relative local position error of one of the sections of an object that is exposed section by section, in particular of a lithography mask or of a wafer, is provided, each exposed section having a plurality of measurement marks, wherein a) a region of the object which is larger than the one section is imaged in magnified fashion and is detected as an image, b) position errors of the measurement marks contained in the detected image are determined on the basis of the detected image, c) corrected position errors are derived by position error components which are caused by the magnified imaging and detection being extracted from the determined position errors of the measurement marks, d) the relative local position error of the one section is derived on the basis of the corrected position errors of the measurement marks.

Abstract: A method and apparatus for the repair of photolithography masks, wherein a photolithography mask is examined for the presence of defects and a list of the defects is generated, in which at least one type of defect, its extent, and its location on the photolithography mask is assigned to each defect, and these defects are repaired.

Abstract: There is provided a reflective X-ray microscope for examining an object in an object plane. The reflective X-ray microscope includes (a) a first subsystem, having a first mirror and a second mirror, disposed in a beam path from the object plane to the image plane, and (b) a second subsystem, having a third mirror, situated downstream of the first subsystem in the beam path. The object is illuminated with radiation having a wavelength <100 nm, and the reflective X-ray microscope projects the object with magnification into an image plane.

Abstract: Apparatus for inspecting objects especially masks in microlithography that are disposed in a vacuum chamber. The apparatus includes a converter for converting illuminating radiation emitted from the object into a radiation of a higher wavelength. A sensor for recording images is disposed outside the vacuum chamber and arranged as an optical interface from the vacuum chamber to the sensor of the converter or at least one part of an image lens is arranged as a window in the vacuum chamber.

Abstract: The invention relates to a mask inspection method that can be used for the design and production of masks, in order to detect relevant weak points early on and to correct the same. According to said method for mask inspection, an aerial image simulation, preferably an all-over aerial image simulation, is carried out on the basis of the mask design converted into a mask layout, in order to determine a list of hot spots. The mask/test mask is analysed by means of an AIMS tool, whereby real aerial images are produced and compared with the simulated aerial images. The determined differences between the aerial images are used to improve the mask design. The inventive arrangement enables a method to be carried out for mask inspection for mask design and mask production. The use of the AIMS tool directly in the mask production process essentially accelerates the mask production, while reducing the error rate and cost.

Abstract: A method and apparatus for the repair of photolithography masks, wherein a photolithography mask is examined for the presence of defects and a list of the defects is generated, in which at least one type of defect, its extent, and its location on the photolithography mask is assigned to each defect, and these defects are repaired.

Abstract: An optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems. The microscope imaging system for emulating high-aperture imaging systems comprises imaging optics, a detector and an evaluating unit, wherein polarizing optical elements are selectively arranged in the illumination beam path for generating different polarization states of the illumination beam and/or in the imaging beam path for selecting different polarization components of the imaging beam, an optical element with a polarization-dependent intensity attenuation function can be introduced into the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing.

Abstract: A microscope, especially a microscope that is used for inspection in semiconductor manufacture is disclosed. The microscope comprises a pulsed laser for the purpose of illumination, preferably in the UV range. At least one rotating diffusion disk is disposed downstream of the laser so as to homogenize the illumination. Preferably, two rotating diffusion disks of opposite rotational sense are disposed in the illumination beam path either directly or indirectly one behind the other.

Abstract: An arrangement making use of two-dimensional arrays consisting of individually controllable elements, for forming aperture diaphragms in the beam paths of optical devices. In an arrangement of diaphragm apertures and/or filters, in which the form, position and/or optical characteristics can be changed, for use in optical devices, at least one two-dimensional array, consisting of individually controllable elements, is arranged for forming the diaphragm apertures and/or filters in the optical imaging and/or illumination beam paths and is connected with a control unit for controlling the individual elements In this way, the geometry, the optical characteristics and/or the position of the aperture diaphragms and/or the filters can be controlled very quickly. These changes can also be made “online” during the process of measurement or adjustment in the sense of optical fine tuning.

Abstract: Apparatus for inspecting objects especially masks in microlithography that are disposed in a vacuum chamber. The apparatus includes a converter for converting illuminating radiation emitted from the object into a radiation of a higher wavelength. A sensor for recording images is disposed outside the vacuum chamber and arranged as an optical interface from the vacuum chamber to the sensor of the converter or at least one part of an image lens is arranged as a window in the vacuum chamber.

Abstract: An arrangement and a method for the production of photomasks in which at least one defect control system is connected to at least one repair system by a stationary data connection or online connection, and the defect control system and repair system are connected to one another by data in such a way that the results obtained on one of the systems are immediately available to the other system for further processing. The defect control system conveys detected defects to the repair system via a data connection for data exchange. An AIMS system is advantageously provided as defect control system and an electron beam system is advantageously provided for defect control.

Abstract: A polarizer device, for converting an entry light beam into an exit light beam with a defined spatial distribution of polarization states, has an angle varying input device for receiving the entry light beam and for generating a first light beam with a predeterminable first angular distribution of light rays; an angle-selectively active polarization influencing device for receiving the first light beam and for converting the first light beam into a second light beam according to a defined angle function of the polarization state variation; and an angle varying output device for receiving the second light beam and for generating the exit light beam with a second angular distribution from the second light beam. In particular, polarization states with a radial or tangential polarization can be provided cost-effectively in this way.

Abstract: The present invention is directed to an optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems. The microscope imaging system for emulating high-aperture imaging systems comprises imaging optics, a detector and an evaluating unit, wherein polarizing optical elements are selectively arranged in the illumination beam path for generating different polarization states of the illumination beam and/or in the imaging beam path for selecting different polarization components of the imaging beam, an optical element with a polarization-dependent intensity attenuation function can be introduced into the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing.

Abstract: There is provided a reflective X-ray microscope for examining an object in an object plane. The reflective X-ray microscope includes (a) a first subsystem, having a first mirror and a second mirror, disposed in a beam path from the object plane to the image plane, and (b) a second subsystem, having a third mirror, situated downstream of the first subsystem in the beam path. The object is illuminated with radiation having a wavelength <100 nm, and the reflective X-ray microscope projects the object with magnification into an image plane.

Abstract: The invention is directed to a device for flat illumination of an object field in an optical instrument and to an optical instrument with a device of this kind. Optical instruments of this type are, for example, microscopes, including microlithography simulation microscopes in which a flat illumination, i.e., illumination extending beyond a singular object point, of the object to be examined is required. The device comprises a laser light source and a light-conducting cable with at least one optical fiber through which the light from the laser light source is guided to the object field. The optical fiber is constructed and dimensioned in such a way that the intensity of the illumination light within the cross section of the optical fiber becomes increasingly more uniform along the path from the input-side end to the output-side end, and the illumination light is directed from the output-side end of the optical fiber to the object with substantially homogeneous intensity distribution.

Abstract: A microscope, especially a microscope that is used for inspection in semiconductor manufacture is disclosed. The microscope comprises a pulsed laser for the purpose of illumination, preferably in the UV range. At least one rotating diffusion disk is disposed downstream of the laser so as to homogenize the illumination. Preferably, two rotating diffusion disks of opposite rotational sense are disposed in the illumination beam path either directly or indirectly one behind the other.

Abstract: The invention is directed to a device for flat illumination of an object field in an optical instrument and to an optical instrument with a device of this kind. Optical instruments of this type are, for example, microscopes, including microlithography simulation microscopes in which a flat illumination, i.e., illumination extending beyond a singular object point, of the object to be examined is required. The device comprises a laser light source (8) and a light-conducting cable (9) with at least one optical fiber through which the light from the laser light source (8) is guided to the object field. The optical fiber is constructed and dimensioned in such a way that the intensity of the illumination light within the cross section of the optical fiber becomes increasingly more uniform along the path from the input-side end to the output-side end, and the illumination light is directed from the output-side end of the optical fiber to the object (O) with substantially homogeneous intensity distribution.

Abstract: An optical imaging system for inspection microscopes with which lithography masks can be checked for defects particularly through emulation of high-aperture scanner systems. The microscope imaging system for emulating high-aperture imaging systems comprises imaging optics, a detector and an evaluating unit, wherein polarizing optical elements are selectively arranged in the illumination beam path for generating different polarization states of the illumination beam and/or in the imaging beam path for selecting different polarization components of the imaging beam, an optical element with a polarization-dependent intensity attenuation function can be introduced into the imaging beam path, images of the mask and/or sample are received by the detector for differently polarized beam components and are conveyed to the evaluating unit for further processing.