Abstract: An electronic device includes a substrate, an insulating layer arranged on the substrate, the insulating layer having an opening in an area of the surface of the substrate, an active layer arranged within the opening on the surface of the substrate, the active layer including a guard ring in those areas of the surface and of the active layer which are adjacent to the insulating layer, and a contacting layer arranged on an area of the active layer, the contact layer being adjacent to an area of the guard ring. The device may be produced by a process of three-fold self-alignment, to be precise utilizing a spacer process by means of which a diffusion source having a lateral extension far below the lithography limit is made possible.

Abstract: A diode circuit includes a pin diode structure, wherein the n-semiconductor layer is a buried layer, on which the i-area is deposited by an epitaxy method, and wherein a p-semiconductor layer is introduced into the epitaxy layer. A contacting of the p-semiconductor layer and a contacting of the n-semiconductor layer are arranged on the same main surface of the semiconductor substrate so that an integration with an integrated capacitor, an integrated resistor and/or an integrated inductor is possible.

Abstract: A capacitor includes a semiconductor substrate in which a trench is formed through which the substrate is doped. A dielectric layer covers the surface of the trench, wherein furthermore an electrically conductive material is arranged in the trench. A first contact structure for contacting the electrically conductive material in the trench in an electrically conductive manner and a second contact structure for contacting the doped semiconductor substrate in an electrically conductive manner are also formed in the capacitor. The capacitor has low series resistance of the electrodes and may be produced in a simple manner.

Abstract: The magnetic component uses at least two different layers of magnetic material for carrying and amplifying the magnetic flux. The use of two different layers which may, however, have the same material composition allows the magnetic conductors to form a magnetic circuit with a locally matched domain alignment. The magnetic component accordingly allows considerable improvements to be achieved in the component parameter, in particular a considerable increase in the Q-factor.

Abstract: A diode circuit includes a pin diode structure, wherein the n-semiconductor layer is a buried layer, on which the i-area is deposited by an epitaxy method, and wherein a p-semiconductor layer is introduced into the epitaxy layer. A contacting of the p-semiconductor layer and a contacting of the n-semiconductor layer are arranged on the same main surface of the semiconductor substrate so that an integration with an integrated capacitor, an integrated resistor and/or an integrated inductor is possible.

Abstract: An electronic device includes a substrate, an insulating layer arranged on the substrate, the insulating layer having an opening in an area of the surface of the substrate, an active layer arranged within the opening on the surface of the substrate, the active layer including a guard ring in those areas of the surface and of the active layer which are adjacent to the insulating layer, and a contacting layer arranged on an area of the active layer, the contact layer being adjacent to an area of the guard ring. The device may be produced by a process of three-fold self-alignment, to be precise utilizing a spacer process by means of which a diffusion source having a lateral extension far below the lithography limit is made possible.

Abstract: A capacitor includes a semiconductor substrate in which a trench is formed through which the substrate is doped. A dielectric layer covers the surface of the trench, wherein furthermore an electrically conductive material is arranged in the trench. A first contact structure for contacting the electrically conductive material in the trench in an electrically conductive manner and a second contact structure for contacting the doped semiconductor substrate in an electrically conductive manner are also formed in the capacitor. The capacitor has low series resistance of the electrodes and may be produced in a simple manner.

Abstract: In a cardiac pacemaker arrangement comprising an electrode arranged floatingly in the atrium, a circuit for perceiving atrial signals, and a circuit for stimulating the atrial myocardium by means of the electrode, the invention proposes that in addition there is provided a wall-located electrode, and stimulation is effected by means of the wall-located electrode if the circuit, upon perceiving atrial signals, does not detect high-frequency irregularities—such as auricular fibrillation or atrial tachycardias—as on the basis of inadmissibly high signal frequencies—, and stimulation is effected by means of the floating electrode if the circuit, upon perceiving atrial signals, detects irregularities of that kind. This permits early detection and termination of atrial tachycardias and auricular fibrillation.

Abstract: The magnetic component uses at least two different layers of magnetic material for carrying and amplifying the magnetic flux. The use of two different layers which may, however, have the same material composition allows the magnetic conductors to form a magnetic circuit with a locally matched domain alignment. The magnetic component accordingly allows considerable improvements to be achieved in the component parameter, in particular a considerable increase in the Q-factor.

Abstract: An electrode arrangement for stimulating the heart by means of the following elements: an implantable cardiac pacemaker which generates electrical pulses; a first electrode (11) connected to a first output of the pacemaker and mounted on an electrode line (10) fitted intracardially and not attached to the heart wall (i.e., floating); and a second electrode (12) for transmitting the electrical stimulation pulses to the excitable heart tissue, situated on the electrode line away from the first electrode and connected to a second pacemaker output. The voltage pulses at the two electrodes have differing polarities relative to another electrode and the electrodes (11, 12) are arranged on the electrode line in such a way that the electrical dipole field which forms is distorted towards the stimulation point in such a way that a raised potential gradient above the stimulus threshold is formed there.

Abstract: In an apparatus for determining the AV transmission time or AV delay in the heart, the apparatus having a signal-sensor arrangement that is disposed in the heart and detects a natural cardiac action, further having at least one signal output and a processing unit that has at least one signal input that is connected to the signal output of the signal-sensor arrangement for calculating the natural AV transmission time based on the detected cardiac action, the signal-receiver arrangement includes a pressure-sensor arrangement that is disposed in the vicinity of the tricuspid valve in the right atrium and/or in the right ventricle for detecting intracardial pressure changes associated with the opening of the tricuspid valve.

Abstract: A decoupling mechanism is provided by incorporating a connecting element into the gearshift linkage disposed between the transmission and gearshift lever. A relatively simple and compact decoupling device is provided for effectively eliminating gear jumping. For this purpose, segmental sleeve portions having internally toothed gear means are axially coupled with the gearshift rod disposed on the side of the gearshift lever, but are adapted for radial inward displacement against the force exerted by springs through cams provided on the tubular casing. Externally toothed gear means are provided on the gearshift rod disposed on the transmission side in the area of the sleeve portions.