Patents by Inventor Wolfgang Helmut HENKE
Wolfgang Helmut HENKE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11709434Abstract: A device manufacturing method including: performing a first exposure on a substrate using a first lithographic apparatus to form a first patterned layer including first features; processing the substrate to transfer the first features into the substrate; and performing a second exposure on the substrate using a second lithographic apparatus to form a second patterned layer including second features, wherein: the first lithographic apparatus has first and second control inputs effective to control first and second parameters of the first features at least partly independently; the second lithographic apparatus has a third control input effective to control the first and second parameters of the second features together; and the first exposure is performed with the first and/or second control input set to pre-bias the first and/or second parameter.Type: GrantFiled: July 14, 2020Date of Patent: July 25, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Rizvi Rahman, Cornelis Johannes Henricus Lambregts, Wolfgang Helmut Henke
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Publication number: 20230176490Abstract: A method and associated apparatuses for optimizing a sampling scheme which defines sampling locations on a bonded substrate, having undergone a wafer to wafer bonding process. The method includes determining a sampling scheme for a metrology process and optimizing the sampling scheme with respect to a singularity defined by a large overlay error and/or grid deformation at a central location on the bonded substrate to obtain a modified sampling scheme.Type: ApplicationFiled: April 20, 2021Publication date: June 8, 2023Applicant: ASML NETHERLANDS B.V.Inventors: Sarathi ROY, Wolfgang Helmut HENKE, Peter TEN BERGE
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Publication number: 20220276570Abstract: A device manufacturing method including: performing a first exposure on a substrate using a first lithographic apparatus to form a first patterned layer including first features; processing the substrate to transfer the first features into the substrate; and performing a second exposure on the substrate using a second lithographic apparatus to form a second patterned layer including second features, wherein: the first lithographic apparatus has first and second control inputs effective to control first and second parameters of the first features at least partly independently; the second lithographic apparatus has a third control input effective to control the first and second parameters of the second features together; and the first exposure is performed with the first and/or second control input set to pre-bias the first and/or second parameter.Type: ApplicationFiled: July 14, 2020Publication date: September 1, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Rizvi RAHMAN, Cornelis Johannes Henricus LAMBREGTS, Wolfgang Helmut HENKE
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Patent number: 11249404Abstract: A system comprises a topography measurement system configured to determine a respective height for each of a plurality of locations on a substrate; and a processor configured to: determine a height map for the substrate based on the determined heights for the plurality of locations; and determine at least one alignment parameter for the substrate by comparing the height map and a reference height map, wherein the reference height map comprises or represents heights for a plurality of locations on a reference substrate portion.Type: GrantFiled: May 18, 2018Date of Patent: February 15, 2022Assignee: ASML Netherlands B.V.Inventors: Emil Peter Schmitt-Weaver, Kaustuve Bhattacharyya, Rene Marinus Gerardus Johan Queens, Wolfgang Helmut Henke, Wim Tjibbo Tel, Theodorus Franciscus Adrianus Maria Linschoten
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Patent number: 11150565Abstract: A lithographic apparatus is used to manufacture a plurality of devices on a substrate. A height map is obtained representing a topographical variation across the substrate. Using the height map the apparatus controls imaging of a field pattern at multiple field locations across the substrate. The field pattern includes a plurality of individual device areas. For field locations near the substrate's edge, the height map data is used selectively so as to ignore topographical variations in one or more individual device areas. Whether a device area is to be ignored is determined at least partly based on the height map data obtained for the current exposure. Alternatively or in addition, the selection can be based on measurements made at the corresponding device area and field location on one or more prior substrates, and/or on the same substrate in a previous layer.Type: GrantFiled: August 9, 2016Date of Patent: October 19, 2021Assignee: ASML Netherlands B.V.Inventors: Rene Marinus Gerardus Johan Queens, Wolfgang Helmut Henke
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Patent number: 10915689Abstract: A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.Type: GrantFiled: September 28, 2016Date of Patent: February 9, 2021Assignee: ASML Netherlands B.V.Inventors: Peter Ten Berge, Everhardus Cornelis Mos, Richard Johannes Franciscus Van Haren, Peter Hanzen Wardenier, Erik Jensen, Bernardo Kastrup, Michael Kubis, Johannes Catharinus Hubertus Mulkens, David Frans Simon Deckers, Wolfgang Helmut Henke, Joungchel Lee
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Patent number: 10845719Abstract: A method of controlling a lithographic apparatus to manufacture a plurality of devices, the method including: obtaining a parameter map representing a parameter variation across a substrate by measuring the parameter at a plurality of points on the substrate; decomposing the parameter map into a plurality of components, including a first parameter map component representing parameter variations associated with the device pattern and one or more further parameter map components representing other parameter variations; deriving a scale factor, configured to correct for errors in measurement of the parameter variation, from measurements of a second parameter of a substrate; and controlling the lithographic apparatus using the parameter map and scale factor to apply a device pattern at multiple locations across the substrate.Type: GrantFiled: December 20, 2017Date of Patent: November 24, 2020Assignee: ASML Netherlands B.V.Inventors: Rene Marinus Gerardus Johan Queens, Wolfgang Helmut Henke, Arend Johannes Donkerbroek, Jeroen Cottaar
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Publication number: 20200133144Abstract: A system comprises a topography measurement system configured to determine a respective height for each of a plurality of locations on a substrate; and a processor configured to: determine a height map for the substrate based on the determined heights for the plurality of locations; and determine at least one alignment parameter for the substrate by comparing the height map and a reference height map, wherein the reference height map comprises or represents heights for a plurality of locations on a reference substrate portion.Type: ApplicationFiled: May 18, 2018Publication date: April 30, 2020Applicant: ASML Netherlands B.V.Inventors: Emil Peter SCHMITT-WEAVER, Kaustuve BHATTACHARYYA, Rene Marinus Gerardus Johan QUEENS, Wolfgang Helmut HENKE, Wim Tjibbo TEL, Theodorus Franeiscus Adrianus Maria LINSCHOTEN
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Publication number: 20190384188Abstract: A method of controlling a lithographic apparatus to manufacture a plurality of devices, the method including: obtaining a parameter map representing a parameter variation across a substrate by measuring the parameter at a plurality of points on the substrate; decomposing the parameter map into a plurality of components, including a first parameter map component representing parameter variations associated with the device pattern and one or more further parameter map components representing other parameter variations; deriving a scale factor, configured to correct for errors in measurement of the parameter variation, from measurements of a second parameter of a substrate; and controlling the lithographic apparatus using the parameter map and scale factor to apply a device pattern at multiple locations across the substrate.Type: ApplicationFiled: December 20, 2017Publication date: December 19, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Rene Marinus Gerardus Johan QUEENS, Wolfgang Helmut HENKE, Arend Johannes DONKERBROEK, Jeroen COTTAAR
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Patent number: 10281825Abstract: A lithographic apparatus applies patterns to substrates, the substrates being processed as a plurality of lots. Each lot of substrates receives a particular layer pattern under layer-specific operating conditions. A thermal model is provided for modeling and compensating one or more characteristics of thermal behavior of components within the lithographic apparatus, in response to the varying layer-specific operating conditions associated with a sequence of lots. The thermal model is also used to simulate thermal behavior of the apparatus when processing a given collection of lots in different possible sequences. Based on comparison of the simulated thermal behavior in different sequences of lots, an optimized sequence is determined. Optionally, lot sequencing rules are determined and used to obtain a preferred thermal behavior when processing a collection of lots in the future.Type: GrantFiled: May 5, 2017Date of Patent: May 7, 2019Assignee: ASML Netherlands B.V.Inventors: Michiel Kupers, Wolfgang Helmut Henke
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Publication number: 20190072857Abstract: A lithographic apparatus applies patterns to substrates, the substrates being processed as a plurality of lots. Each lot of substrates receives a particular layer pattern under layer-specific operating conditions. A thermal model is provided for modeling and compensating one or more characteristics of thermal behavior of components within the lithographic apparatus, in response to the varying layer-specific operating conditions associated with a sequence of lots. The thermal model is also used to simulate thermal behavior of the apparatus when processing a given collection of lots in different possible sequences. Based on comparison of the simulated thermal behavior in different sequences of lots, an optimized sequence is determined. Optionally, lot sequencing rules are determined and used to obtain a preferred thermal behavior when processing a collection of lots in the future.Type: ApplicationFiled: May 5, 2017Publication date: March 7, 2019Applicant: ASML NETHERLANDS B.V.Inventors: Michiel KUPERS, Wolfgang Helmut HENKE
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Publication number: 20180307135Abstract: A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.Type: ApplicationFiled: September 28, 2016Publication date: October 25, 2018Applicant: ASML NETHERLANDS B.V.Inventors: Peter TEN BERGE, Everhardus Cornelis MOS, Richard Johannes Franciscus VAN HAREN, Peter Hanzen WARDENIER, Erik JENSEN, Bernardo KASTRUP, Michael KUBIS, Johannes Catharinus Hubertus MULKENS, Davis Frans Simon DECKERS, Wolfgang Helmut HENKE, Joungchel LEE