Abstract: Unpolished semiconductor wafers are produced by: (a) pulling a single crystal of a semiconductor material, (b) grinding the single crystal round, (c) separating a semiconductor wafer from this crystal, (d) rounding the edge of the semiconductor wafer, (e) surface-grinding at least one side of the semiconductor wafer, (f) treating the semiconductor wafer with an etchant, and (g) cleaning the semiconductor wafer. The unpolished semiconductor wafers have, on at least the front side, a reflectivity of 95% or more, a surface roughness of 3 nm or less, have a thickness of 80-2500 ?m, an overall planarity value GBIR of 5 ?m or less with an edge exclusion of 3 mm and a photolithographic resolution of at least 0.8 ?m, and which furthermore contain a native oxide layer with a thickness of 0.5-3 nm on both sides.

Abstract: Unpolished semiconductor wafers are produced by: (a) pulling a single crystal of a semiconductor material, (b) grinding the single crystal round, (c) separating a semiconductor wafer from this crystal, (d) rounding the edge of the semiconductor wafer, (e) surface-grinding at least one side of the semiconductor wafer, (f) treating the semiconductor wafer with an etchant, and (g) cleaning the semiconductor wafer. The unpolished semiconductor wafers have, on at least the front side, a reflectivity of 95% or more, a surface roughness of 3 nm or less, have a thickness of 80-2500 ?m, an overall planarity value GBIR of 5 ?m or less with an edge exclusion of 3 mm and a photolithographic resolution of at least 0.8 ?m, and which furthermore contain a native oxide layer with a thickness of 0.5-3 nm on both sides.

Abstract: Unpolished semiconductor wafers are produced by: (a) pulling a single crystal of a semiconductor material, (b) grinding the single crystal round, (c) separating a semiconductor wafer from this crystal, (d) rounding the edge of the semiconductor wafer, (e) surface-grinding at least one side of the semiconductor wafer, (f) treating the semiconductor wafer with an etchant, and (g) cleaning the semiconductor wafer. The unpolished semiconductor wafers have, on at least the front side, a reflectivity of 95% or more, a surface roughness of 3 nm or less, have a thickness of 80-2500 ?m, an overall planarity value GBIR of 5 ?m or less with an edge exclusion of 3 mm and a photolithographic resolution of at least 0.8 ?m, and which furthermore contain a native oxide layer with a thickness of 0.5-3 nm on both sides.

Abstract: A method and apparatus for pulling single crystals from a melt of semicontor material, in which a monocrystalline seed crystal grows to form a single crystal, the seed crystal being dipped into the melt and raised in a controlled manner in the vertical direction with respect to the melt, while the melt forms a molten pool which is held on a support body only by the surface tension and by electromagnetic forces due to an induction coil. This method includes recharging the melt with semiconductor material in solid or liquid form during the growth of the single crystal.

Abstract: A method for pulling silicon semiconductor rods, in particular having diaers of 10cm and over. The current methods of crucible-free float zoning or float zone pulling can be markedly improved if the molten cap like zone which develops is forced inwardly in the growth process. This is accomplished with the aid of electromagnetic forces in an annular zone situated opposite the coil slot. The electromagnetic forces can be achieved by using induction heating coils whose coil surface facing the molten cap is provided with annular segments whose thickness increases from their inner periphery ouotwardly and which are disposed opposite the coil slot above the peripheral region of the molten cap.

Abstract: A method for crucible-free zone pulling of silicon monocrystalline rods is described. According to the invention, a polycrystalline silicon rod obtained by crucible pulling according to the Czochralski procedure is used in lieu of the polycrystalline silicon rod produced by vapor deposition.

Abstract: A hinge mount assembly for motor vehicle seats includes at each lateral side of the seat an outer hinge mount member shaped with an embossed external gear meshing at one point with the internal gear. Both hinge mount members are supported on a rotary axle having an eccentric portion supporting the inner hinge mount member and thus forming a wobble gear inclination adjuster for the backrest. The axial compactness of both hinge mount assemblies of the seat is insured by bearing plates adjoining the inner hinge mount members and being interconnected above the pivot axle by a U-shaped attachment frame for the backrest and, below the pivot axle, by a transverse beam. In addition, each inner hinge mount member is rigidly connected to a reinforcing side strap which overlaps the outer surface of the outer hinge mount member.

Abstract: A motor-vehicle seat has a seat part and a back part interconnected by means of a hinge having a first hinge element secured to one of these parts and a second hinge element secured to the other part and pivotal on the first element about a horizontal axis. One of these elements is formed as a ring gear with an annular array of inwardly directed teeth and the other element carries a plurality of individually pivoted pawls which can be swung radially outwardly into mesh with these teeth to lock the two elements relative to each other. A cam is provided for radially pivoting these pawls to lock the seat back in any position relative to the seat part. Each pawl has a pivot pin secured in the respective hinge element which is also provided with a plurality of formations adjacent the front ends of these pawls so that even if the pivot pins of the pawls break off the pawls will be supported inside the hinge and the two hinge elements will not be able to pivot relative to each other.