Abstract: A drive device, in particular an electric-motor adjustment drive of a motor vehicle, comprising a drive housing having a brushless electric motor mounted therein, the electric motor having a stator having a stator winding and a rotor having a rotor shaft, the rotor shaft being coupled to a transmission mechanism. The drive housing has a transmission mechanism housing and a motor housing, which is connected to the transmission mechanism housing at a connection interface. A plug connection for receiving a mating plug connection is provided on the motor housing or on the transmission mechanism housing, the plug connection having a number of connection contacts. A number of phase connections of the stator winding is led into a joining and/or contacting position. The phase connections are led, for the electrical contacting thereof, to the connection contacts of the plug connection.

Abstract: A drive device contains a brushless electric motor having a rotor with a rotor shaft coupled to the rotor, and a stator which has a stator support and a rotating field winding or stator winding with a number of phase connection wires. A gear mechanism housing is provided and has an electronics compartment with a printed circuit board which is accommodated in the compartment and has connection points for the phase connection wires. A housing shaft is provided which is coaxial with respect to the axis of rotation of the rotor shaft and in which the stator is accommodated together with the stator support and the rotor is accommodated together with the rotor shaft. A connection adapter is provided in which the phase connection wires are oriented radially and are accommodated in a connection grid which is adapted to the connection points of the printed circuit board.

Abstract: A semiconducting layer comprising a non-polymeric quinoid heteroacene compound of the formula (I) wherein X stands for O, S or NR, each of R, R1, R2, R3, R4, R5, R6, R7, R8 being independently selected from hydrogen and an organic residue, or 2 or more thereof together forming one or more annealed rings, which may be substituted or unsubstituted, carbocyclic or helerocyclic, aromatic, quinoid or aliphatic, may be used e.g. for the manufacture of a diode, an organic field effect transistor, an organic thin film transistor, or a device containing a diode and/or an organic field effect transistor and/or organic thin film transistor.

Abstract: A method for making an organic field-effect device (e.g. TFT or SC-FET device) is proposed, comprising the Steps of (a) depositing an polymeric dielectric with a repellency to detrimental molecules from Solution or from the vapor phase to form an insulating layer and (b) depositing an oligomer layer which is grown from the vapor phase, the oligomer layer being adjacent to the insulating layer in the completed device. Furthermore the correspondingly produced organic field effect devices are disclosed.

Abstract: A semiconducting layer comprising a non-polymeric quinoid heteroacene compound of the formula (I) wherein X stands for O, S or NR, each of R, R1, R2, R3, R4, R5, R6, R7, R8 being independently selected from hydrogen and an organic residue, or 2 or more thereof together forming one or more annealed rings, which may be substituted or unsubstituted, carbocyclic or helerocyclic, aromatic, quinoid or aliphatic, may be used e.g. for the manufacture of a diode, an organic field effect transistor, an organic thin film transistor, or a device containing a diode and/or an organic field effect transistor and/or organic thin film transistor.