Abstract: On a carrier surface, a layer of S-layer proteins is produced as a carrier of functional molecules. A solution containing S-layer proteins in the form of monomers or oligomers is brought into contact with the carrier surface. Electrochemical conditions are produced in the solution such that the S-layer proteins (SU) have an electrical net charge by establishing an electrochemical potential difference between the solution and the carrier surface such that the S-layer proteins accumulate on the carrier surface. A two-dimensional crystalline structure is formed in the layer, and this can occur at a time separate from the deposition of the S-layer proteins, and under different electrochemical conditions.

Abstract: On a carrier surface (CP), a layer of cell surface layer proteins (S-layer proteins) (SU, SM, SL) is produced as a carrier of functional molecules by virtue of a solution containing S-layer proteins in the form of monomers (SU) or oligomers (SM) being brought into contact with the carrier surface. To deposit the S-layer proteins, electrochemical conditions are set in the solution at which the S-layer proteins (SU) have an electrical net charge, and by setting the electrical potential of the carrier surface (CP) an electrochemical potential difference is produced between the solution and the carrier surface under whose effect the S-layer proteins from the solution accumulate on the carrier surface. In the layer formed in this way, a two-dimensional crystalline structure (SL) is then configured, wherein this can occur at a time separate from the deposition of the S-layer proteins and under different electrochemical conditions of the solution and/or the substrate.

Abstract: The invention provides a method for generating thin layers on a silicon base having a high purity, thermal stability and good dielectric properties wherein non-functionalized organosiloxanes with alkyl groups or alkyl and aryl groups are photochemically polymerized and/or cross-linked by means of pulsed laser radiation with a wavelength of less than 400 nm where the pulse duration is 10 ps to 1 ms, the pulse frequency is 1 Hz to 10 KHz and the energy density is at least 1 J/cm.sup.2 and the irradiation takes placed with one or more pulses. The layers can be used as passivating and insulating layers for semiconductor components and circuits.