Abstract: The high pressure sensor includes a housing part, a lid closing the same and an intermediary disposed sensor disk. A cylindrical pressure chamber is formed in the housing, wherein an inner area of the sensor disk is disposed in a sealed off manner. In this area the measuring sensors are disposed in form of piezoresistive layer resistors. Layer conductors penetrate from this inner area into an outer area, wherein evaluation circuits and the evaluation electronic are disposed. The total sensor disk is provided with one or a plurality of glass layers in such a manner that a flat surface is obtained. Pressure changes of the pressure medium are picked up in the pressure chamber by the measuring sensors and are processed accordingly. Such a high pressure sensor is relatively simple and advantageous in its use.

Abstract: Very fine solder-coated conduction paths are made on ceramic, glass or enamel substrates by the combination of a first step in thick-film technology followed by the photo-masking and etching steps typical of thin-film technology, after which galvanic reinforcement of the initial calcined copper paste layer is performed in the locations where the initial layer is exposed by the developed mask. A lead-tin solder layer is then galvanically deposited, which is thicker than the mask, after which the mask is removed and the newly exposed portions of the initial copper layer are etched away. A reflow treatment of the solder layer pattern consolidates the solder layer by melting on top of the boundaries of the unetched initial copper layer. It is possible to obtain conduction path spacings down to 50 .mu.m with conduction paths coated with solder that have excellent adhesion to ceramic, glass or enamel substrates.

Abstract: To simplify manufacture and provide a polarographic sensor of high response speed, operating according to the current limiting principle, an oxygen molecule migration barrier is provided leading to the cathode by separating the cathode from the space where the gas to be tested exists by a wall through which a hole is provided which extends therethrough to a small space immediately above the cathode defined by support elements placed immediately on the cathode. The hole, or a plurality of holes, is so dimensioned that the diameter thereof, with respect to its length, is small, with diameters of between 0.01 to 0.06 mm and a length of at least about 1 mm being suitable.

Abstract: To decrease the lifetime of minority carriers and thus increase switching speed, gold is diffused into a silicon body, the gold being applied by first electroless applying a nickel layer to a single crystal silicon to activate the silicon for reception of gold; and then, electroless applying the gold layer over the silicon layer. In accordance with a preferred process, the electrolessly applied nickel layer is sintered, a second nickel layer is applied thereover and the gold then applied over the second additional nickel layer. A further layer of nickel can be applied electrolessly, over which gold is applied to form a contact surface to which a contact wire can be soldered or fused.