Abstract: The present invention relates to a method for preparing oligosaccharides which can be used among others as food additives to reduce calorie content, to sweeten food products, to increase the fiber content of food products, to improve the texture of food products and to stimulate the gut microbiome bacteria. Furthermore they can be applied in the fields of animal feed, or other applications. More particularly, this invention is directed to a high temperature hydrolysis of xyloglucan polysaccharide to defined xyloglucan oligosaccharides. The invention further relates to oligosaccharide hydrolysates produced with the method of the invention and to the use of said oligosaccharide hydrolysates in human and/or animal nutrition, as prebiotic or other uses. Further provided are novel endoglucanases for use in the method of the invention as well as in other applications.

Abstract: The present invention relates to a method for preparing oligosaccharides which can be used among others as food additives to reduce calorie content, to sweeten food products, to increase the fiber content of food products, to improve the texture of food products and to stimulate the gut microbiome bacteria. Furthermore they can be applied in the fields of animal feed, or other applications. More particularly, this invention is directed to a high temperature hydrolysis of xyloglucan polysaccharide to defined xyloglucan oligosaccharides. The invention further relates to oligosaccharide hydrolysates produced with the method of the invention and to the use of said oligosaccharide hydrolysates in human and/or animal nutrition, as prebiotic or other uses. Further provided are novel endoglucanases for use in the method of the invention as well as in other applications.

Abstract: The present invention relates to novel polypeptides with xylanase activity, especially xylanase variants, such as genetically engineered xylanase variants, which show improved thermostability, improved resistance against acid treatment and increased enzyme activity on arabinoxylan. The invention includes the use of said polypeptides in applications, such as for food or feed, for brewing or malting, for the treatment of xylan containing raw materials like grain-based materials, e.g. for the production of biofuels or other fermentation products, including biochemicals, and/or for the wheat gluten-starch separation industry, and methods using these polypeptides, as well as compositions (such as feed additive compositions) comprising said polypeptides.

Abstract: A mutant ?-glucosidase polypeptide exhibits enhanced thermostability and has the amino acid sequence: MAKFPRDFVWGTATSSYQIEGAVNEDGRTPSIWDTFSKTX1GKTYKGHT GDVACDHYHRYKEDVEILKEIGVKAYRFSIAWPRIFPEEGKYNPKGMDF YKKLIDELQKRDIX2PAATIYHWDLPQWAYDKGGGWLNRESIKWYVEYA TKLFEELGDAIPLWITHNEPWCSSILSYGIGEHAPGHKNYREALIAAHH ILLSHGEAVKAFREMNIKGSKIGITLNLTPAYPASEKEEDKLAAQYADG FANRWELDPIFKGNYPEDMMELYSKIIGEFDFIKEGDLETISVPIDFLG X3NYYTRSIVKYDEDSMLKAENVPGPGKRTEMGWEISPESLYDLLKRLD REYTKLPMYITENGAAFKDEVTEDGRVHDDERIEYIKEHLKAAAKFIGE GGNLKGYFVWSLMDNFEWAHGYSKRFGIVYVDYX4TQKRILKDSALWYK EVIX5DDGIED, wherein X1 is selected from E, P, T, M, A, S and G; X2 is selected from V, K, R and H; X3 is selected from I, L, M, P, T and A; X4 is selected from T, E, D, N, Q, M and P; and X5 is selected from L, R, K and H.

Abstract: The present invention relates to a method for the preparation of a food product comprising rye, which comprises the steps of preparing a primary food mixture; adding to said primary food mixture a composition comprising at least one glycoside hydrolase family 10 (GH10) enzyme; and processing said primary food mixture to produce said food product comprising rye. The invention further provides GH10 enzymes, compositions comprising said enzymes and the use of said enzymes and said composition in preparing food products.

Abstract: A method for programming a one-time programmable structure is disclosed. The method comprises producing an electrical circuit having the one-time programmable structure. The method furthermore comprises severing the one-time programmable structure by etching the one-time programmable structure in a separating region.

Abstract: The invention relates to mutant variants of the ?-glucosidase Cgl T from Thermoanaerobacter brockii and nucleic acids for producing the same. Said mutant variants show significantly increased thermostability and enzyme activity. Furthermore, the invention provides vectors, host cells and methods for producing said mutant variants of the ?-glucosidase Cgl T. Also provided are artificial cellulosomes comprising the mutant variants of the ?-glucosidase Cgl T and methods for the enzymatic hydrolysis of cellulosic biomass comprising said artificial cellulosomes and/or said mutant variants of the ?-glucosidase Cgl T.

Abstract: A bipolar transistor and a method for fabricating a bipolar transistor are disclosed. In one embodiment the bipolar transistor includes a semiconductor body including a collector region and a base region arranged on top of the collector region, the collector region being doped with dopants of a second doping type and the base region being at least partly doped with dopants of a first doping type and an insulating spacers arranged on top of the base region. The semiconductor body further includes a semiconductor layer including an emitter region arranged on the base region and laterally enclosed by the spacers, the emitter region being doped with dopants of the second doping type forming a pn-junction with the base region, wherein the emitter region is fully located above a horizontal plane through a bottom side of the spacers.

Abstract: A bipolar transistor and a method for fabricating a bipolar transistor are disclosed. In one embodiment the bipolar transistor includes a semiconductor body including a collector region and a base region arranged on top of the collector region, the collector region being doped with dopants of a second doping type and the base region being at least partly doped with dopants of a first doping type and an insulating spacers arranged on top of the base region. The semiconductor body further includes a semiconductor layer including an emitter region arranged on the base region and laterally enclosed by the spacers, the emitter region being doped with dopants of the second doping type forming a pn-junction with the base region, wherein the emitter region is fully located above a horizontal plane through a bottom side of the spacers.

Abstract: A bipolar transistor and a method for fabricating a bipolar transistor are disclosed. In one embodiment the bipolar transistor includes a semiconductor body including a collector region and a base region arranged on top of the collector region, the collector region being doped with dopants of a second doping type and the base region being at least partly doped with dopants of a first doping type and an insulating spacers arranged on top of the base region.

Abstract: A bipolar transistor and a method for fabricating a bipolar transistor are disclosed. In one embodiment the bipolar transistor includes a semiconductor body including a collector region and a base region arranged on top of the collector region, the collector region being doped with dopants of a second doping type and the base region being at least partly doped with dopants of a first doping type and an insulating spacers arranged on top of the base region. The semiconductor body further includes a semiconductor layer including an emitter region arranged on the base region and laterally enclosed by the spacers, the emitter region being doped with dopants of the second doping type forming a pn-junction with the base region, wherein the emitter region is fully located above a horizontal plane through a bottom side of the spacers.

Abstract: A bipolar transistor and a method for fabricating a bipolar transistor are disclosed. In one embodiment the bipolar transistor includes a semiconductor body including a collector region and a base region arranged on top of the collector region, the collector region being doped with dopants of a second doping type and the base region being at least partly doped with dopants of a first doping type and an insulating spacers arranged on top of the base region. The semiconductor body further includes a semiconductor layer including an emitter region arranged on the base region and laterally enclosed by the spacers, the emitter region being doped with dopants of the second doping type forming a pn-junction with the base region, wherein the emitter region is fully located above a horizontal plane through a bottom side of the spacers.

Abstract: A fuse structure includes a substrate, a fuse conductive trace disposed closer to a first chip surface than to a second chip surface facing away from the first chip surface, a metallization layer on the substrate disposed on a side of the fuse conductive trace facing away from the first chip surface, and a planar barrier multilayer assembly disposed between the fuse conductive trace and the metallization layer and including multiple barrier layers of different materials, wherein the fuse conductive trace, the metallization layer and the barrier multilayer assembly are arranged such that when cutting the fuse conductive trace and the barrier multilayer assembly, a first area of the metallization layer is electrically isolated from a second area of the metallization layer.

Abstract: The disclosed invention provides a method for the fabrication of a bipolar transistor having a collector region comprised within a semiconductor body separated from an overlying base region by one or more isolation cavities (e.g., air gaps) filled with low permittivity gas. In particular, a multilayer base-collector dielectric film is deposited over the collector region. A base region is formed onto the multilayer dielectric film and is patterned to form one or more base connection regions. The multilayer dielectric film is selectively etched during a plurality of isotropic etch processes to allow for the formation of one or more isolation region between the base connection regions and the collector region, wherein the one or more isolation regions comprise cavities filled with a gas having a low dielectric constant (e.g., air). The resultant bipolar transistor has a reduced base-collector capacitance, thereby allowing for improved frequency properties (e.g., higher maximum frequency operation).

Abstract: One or more embodiments relate to a semiconductor chip including a capacitor arrangement, the capacitor arrangement comprising: a first capacitor; and a second capacitor stacked above the first capacitor, the first capacitor and the second capacitor coupled in series between a first metallization level and a second metallization level adjacent the first metallization level.

Abstract: One or more embodiments relate to a semiconductor chip including a capacitor arrangement, the capacitor arrangement comprising: a first capacitor; and a second capacitor stacked above the first capacitor, the first capacitor and the second capacitor coupled in series between a first metallization level and a second metallization level adjacent the first metallization level.

Abstract: The disclosed invention provides a method for the fabrication of a bipolar transistor having a collector region comprised within a semiconductor body separated from an overlying base region by one or more isolation cavities (e.g., air gaps) filled with low permittivity gas. In particular, a multilayer base-collector dielectric film is deposited over the collector region. A base region is formed onto the multilayer dielectric film and is patterned to form one or more base connection regions. The multilayer dielectric film is selectively etched during a plurality of isotropic etch processes to allow for the formation of one or more isolation region between the base connection regions and the collector region, wherein the one or more isolation regions comprise cavities filled with a gas having a low dielectric constant (e.g., air). The resultant bipolar transistor has a reduced base-collector capacitance, thereby allowing for improved frequency properties (e.g., higher maximum frequency operation).

Abstract: The invention relates to a method for producing an amino acid comprising culturing a microorganism of the genus Corynebacterium or Brevibacterium wherein said microorganism is partially or completely deficient in at least one of the gene loci of the group which is formed by otsAB, treZ and treS, and subsequent isolation of the amino acid from the culture medium.

Abstract: A fuse structure includes a substrate, a fuse conductive trace disposed closer to a first chip surface than to a second chip surface facing away from the first chip surface, a metallization layer on the substrate disposed on a side of the fuse conductive trace facing away from the first chip surface, and a planar barrier multilayer assembly disposed between the fuse conductive trace and the metallization layer and including multiple barrier layers of different materials, wherein the fuse conductive trace, the metallization layer and the barrier multilayer assembly are arranged such that when cutting the fuse conductive trace and the barrier multilayer assembly, a first area of the metallization layer is electrically isolated from a second area of the metallization layer.

Abstract: The invention relates to a method for producing an amino acid comprising culturing a microorganism of the genus Corynebacterium or Brevibacterium wherein said microorganism is partially or completely deficient in at least one of the gene loci of the the group which is formed by otsAB, treZ and treS, and subsequent isolation of the amino acid from the culture medium.