Abstract: Provided are a system, method, and computer program product for controlling access to a shared storage system in communication with at least one cluster of host nodes. Cluster membership metadata is stored in a storage independent from the shared storage for at least one cluster. The cluster membership metadata is updated in response to an inclusion or exclusion request from a requesting host node comprising one of the host nodes identifying at least one other host node to include or exclude from a cluster. Access to at least one storage volume in the shared storage system is managed in response to the updating of the cluster membership metadata for the inclusion or exclusion request.

Abstract: Methods, apparatuses, and systems for providing a body connection to a vertical access device. The vertical access device may include a digit line extending along a substrate to a digit line contact pillar, a body connection line extending along the substrate to a body connection line contact pillar, a body region disposed on the body connection line, an electrode disposed on the body region, and a word line extending to form a gate to the body region. A method for operation includes applying a first voltage to the body connection line, and applying a second voltage to the word line to cause a conductive channel to form through the body region. A memory cell array may include a plurality of vertical access devices.

Abstract: A catalyst composition including: (a) a chromium compound; (b) a ligand of the general structure (A) R1R2P—N(R3)—P(R4)—NR5R6 or (B) R1R2P—N(R3)—P(XR7)R8 or R1R2P—N(R3)—P(XR7)2, with X=O or S, wherein R1, R2, R3, R4, R5, R6, R7 and R8 are independently C1-C10-alkyl, C6-C20-aryl, C3-C10-cycloalkyl, aralkyl, alkylaryl, or trialkylsilyl, or any cyclic derivatives of (A) and (B), wherein at least one of the P or N atoms of the PNPN-unit or PNP-unit is a member of the ring system, the ring system being formed from one or more constituent compounds of structures (A) or (B) by substitution; and (c) an activator or co-catalyst; and a process for tri- and/or tetramerization.

Abstract: A method of forming contacts for a semiconductor device structure comprises forming contact holes extending into neighboring semiconductive pillars and into a nitride material of nitride-capped electrodes. Composite structures are formed within the contact holes and comprise oxide structures over sidewalls of the contact holes and nitride structures over the oxide structures. Conductive structures are formed over inner sidewalls of the composite structures. Additional nitride-capped electrodes are formed over the conductive structures and extend perpendicular to the nitride-capped electrodes. Pairs of nitride spacers are formed over opposing sidewalls of the additional nitride-capped electrodes and are separated from neighboring pairs of nitride spacers by apertures extending to upper surfaces of a portion of the neighboring semiconductive pillars. Portions of the oxide structures are removed to expose sidewalls of the portion of the neighboring semiconductive pillars.

Abstract: A catalyst composition and a process for di-, tri- and/or tetramerization of ethylene, wherein the catalyst composition comprises a chromium compound, a ligand of the general structure R1R2P—N(R3)—P(R4)—N(R5)—PR6R7, or any cyclic derivatives thereof, wherein at least one of the P or N atoms of the PNPNP-unit is member of a ring system, the ring system being formed from one or more constituent compounds of the ligand by substitution, and a co-catalyst or activator.

Abstract: A mechanical component for thermal turbo machinery, such as a steam or gas turbine, includes a base part and at least one additional device being mechanically coupled to the base part in order to influence the vibration characteristic of the base part during operation of the turbo machine. High-Cycle Fatigue at part-load can be reduced by enabling the mechanical coupling between the base part and the at least one additional device to change with the temperature of the at least one additional device.

Abstract: A ring rolling device includes a drive roller and a rotatable revolving drum, in which five mandrels are rotatably mounted. Ring blanks can be mounted around the mandrels. By rotating the revolver drum, the mandrels move towards and away from the drive roller. The revolver drum is arranged in relation to the drive roller in such a way, that by rotating the revolver drum a decreasing roll gap is formed between a mandrel approaching the drive roller and the drive roller, in which roll gap a ring blank mounted around the mandrel is rolled during the rotating of the revolver drum. The revolver drum has four rotatably mounted support rollers, said support rollers supporting the mandrel in the direction of the rotational axis of the revolving drum, such that, during the rolling process, the mandrel is located between the support rollers and the press element.

Abstract: An equipment carrier includes a surface module with a first securing device and a column module with a second securing device. The first securing device on the surface module and the second securing device on the column module are designed corresponding to each other such that the column module and the surface module can be connected to each other with a first, linear movement and a subsequent second, rotational movement of the column module relative to the surface module.

Abstract: A method of forming conductive vias comprises forming at least three parallel line constructions elevationally over a substrate. The line constructions individually comprise a dielectric top and dielectric sidewalls. A conductive line is formed elevationally over and angles relative to the line constructions. The conductive line comprises a longitudinally continuous portion and a plurality of conductive material extensions that individually extend elevationally inward between immediately adjacent of the line constructions. Etching is conducted elevationally through the longitudinally continuous portion and partially elevationally into the extensions at spaced locations along the conductive line to break-up the longitudinally continuous portion to form individual conductive vias extending elevationally between immediately adjacent of the line constructions. Methods of forming a memory array are also disclosed. Arrays of conductive vias independent of method of manufacture are also disclosed.

Abstract: An array includes vertically-oriented transistors. The array includes rows of access lines and columns of data/sense lines. Individual of the rows include an access line interconnecting transistors in that row. Individual of the columns include a data/sense line interconnecting transistors in that column. The array includes a plurality of conductive lines which individually extend longitudinally parallel and laterally between immediately adjacent of the data/sense lines. Additional embodiments are disclosed.

Abstract: Some embodiments include a DRAM array layout. Wordlines extend along a first direction, and bitlines extend along a second direction that crosses the first direction. Cell active material structures are at intersections of the wordlines and bitlines. The cell active material structures have a first side coupled to a bitline and a second side coupled to a capacitor. The second side is on an opposite side of a wordline passing through a cell active material structure relative to the first side. Each cell active material structure has a connection to a bitline which is not shared with any other cell active material structures. Some embodiments include DRAM arrays and semiconductor constructions.

Abstract: A method of forming contacts for a semiconductor device structure comprises forming contact holes extending into neighboring semiconductive pillars and into a nitride material of nitride-capped electrodes. Composite structures are formed within the contact holes and comprise oxide structures over sidewalls of the contact holes and nitride structures over the oxide structures. Conductive structures are formed over inner sidewalls of the composite structures. Additional nitride-capped electrodes are formed over the conductive structures and extend perpendicular to the nitride-capped electrodes. Pairs of nitride spacers are formed over opposing sidewalls of the additional nitride-capped electrodes and are separated from neighboring pairs of nitride spacers by apertures extending to upper surfaces of a portion of the neighboring semiconductive pillars. Portions of the oxide structures are removed to expose sidewalls of the portion of the neighboring semiconductive pillars.

Abstract: The invention relates to a fiber optic cable connector (1), the fiber optic cable contact (1) having a hot forming zone (100) at a free longitudinal end portion (10) and, at a portion (11) of the fiber optic cable contact (1) remote from the hot forming zone (100), a thermal barrier zone (110), the thermal barrier zone (110) being configured in such a way that it prevents heat from passing from the hot forming zone (100) into a portion of the fiber optic cable contact (1) on the other side of the thermal barrier zone (110).

Abstract: A connector insert is disclosed. The connector insert has a cable including a plurality of wires, a plurality of plug contacts, a housing including at least one reception chamber defining an inlet, and a stabilizer including a first fastening location at which the stabilizer is attached to the housing and a second fastening location at which the stabilizer is attached to the cable. Each plug contact is attached to a wire, and the reception chamber accepts the plug contacts through the inlet. The stabilizer is composed of a dimensionally stable material.

Abstract: A circuit structure includes a substrate having an array region and a peripheral region. The substrate in the array and peripheral regions includes insulator material over first semiconductor material, conductive material over the insulator material, and second semiconductor material over the conductive material. The array region includes vertical circuit devices which include the second semiconductor material. The peripheral region includes horizontal circuit devices which include the second semiconductor material. The horizontal circuit devices in the peripheral region individually have a floating body which includes the second semiconductor material. The conductive material in the peripheral region is under and electrically coupled to the second semiconductor material of the floating bodies. Conductive straps in the array region are under the vertical circuit devices.

Abstract: Provided are a method, system, and computer program product for a local authorization extension to provide access authorization for a module to access a computing system. A memory stores information on a first validity range comprising position coordinates for a module seeking to access the computing system and a second validity range comprising position coordinates for a location authorization extension for a computing system. A determination is made of a first position signal from a first receiver of the module and of a second position signal from a second receiver of the location authorization module. Determinations are made as to whether the first position signal is within the first validity range and whether the second position signal is within the second validity range. The module is granted access to the computing system in response to determining that the first position signal is within the first validity range and the second position signal is within the second validity range.

Abstract: A semiconductor device may include a memory array including vertical memory cells connected to a digit line, word lines, and a body connection line. A row or column of the memory array may include one or more pillars connected to the body connection line. A voltage may be applied to the body connection line through at least one pillar connected to the body connection line. Application of the voltage to the body connection line may reduce floating body effects. Methods of forming a connection between at least one pillar and a voltage supply are disclosed. Semiconductor devices including such connections are also disclosed.

Abstract: A catalyst composition including: (a) a chromium compound; (b) a ligand of the general structure (A) R1R2P—N(R3)—P(R4)—NR5R6 or (B) R1R2P—N(R3)—P(XR7)R8 or R1R2P—N(R3)—P(XR7)2, with X=O or S, wherein R1, R2, R3, R4, R5, R6, R7 and R8 are independently C1-C10-alkyl, C6-C20-aryl, C3-C10-cycloalkyl, aralkyl, alkylaryl, or trialkylsilyl, or any cyclic derivatives of (A) and (B), wherein at least one of the P or N atoms of the PNPN-unit or PNP-unit is a member of the ring system, the ring system being formed from one or more constituent compounds of structures (A) or (B) by substitution; and (c) an activator or co-catalyst; and a process for tri- and/or tetramerization.

Abstract: An array of recessed access gate lines includes active area regions having dielectric trench isolation material there-between. The trench isolation material comprises dielectric projections extending into opposing ends of individual active area regions under an elevationally outermost surface of material of the active area regions. The active area material is elevationally over the dielectric projections. Recessed access gate lines individually extend transversally across the active area regions and extend between the ends of immediately end-to-end adjacent active area regions within the dielectric trench isolation material. Other arrays are disclosed, as are methods.

Abstract: A substrate holder having a base plate where a plurality of protruding poles is arranged, said poles spaced apart from one another by intermediate spaces. Alternatively or in addition, a plasma reactor for depositing diamond from the gas phase may be provided, the plasma reactor comprising such a substrate holder. A method for depositing diamond from the gas phase may be provided.