Patents by Inventor Wolfgang Marbler

Wolfgang Marbler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190056433
    Abstract: A detector for detecting an occurrence of a current strength of interest (e.g. zero current) of a current of a signal to be sensed includes a magnetoresistive structure and a detection unit. The magnetoresistive structure varies a resistance depending on a magnetic field caused by the current of the signal to be sensed. Further, the detection unit generates and provides a current detection signal indicating an occurrence of the current strength of interest based on a detected magnitude of the varying resistance of the magnetoresistive structure.
    Type: Application
    Filed: October 22, 2018
    Publication date: February 21, 2019
    Applicant: Infineon Technologies Austria AG
    Inventors: Siegfried Krainer, Wolfgang Marbler, Wolfgang Granig
  • Patent number: 10132843
    Abstract: A detector for detecting an occurrence of a current strength of interest of a current of a signal to be sensed includes a magnetoresistive structure and a detection unit. The magnetoresistive structure varies a resistance depending on a magnetic field caused by the current of the signal to be sensed. Further, the detection unit generates and provides a current detection signal indicating an occurrence of the current strength of interest based on a detected magnitude of the varying resistance of the magnetoresistive structure.
    Type: Grant
    Filed: July 11, 2013
    Date of Patent: November 20, 2018
    Assignee: Infineon Technologies Austria AG
    Inventors: Siegfried Krainer, Wolfgang Marbler, Wolfgang Granig
  • Publication number: 20150016163
    Abstract: A detector for detecting an occurrence of a current strength of interest of a current of a signal to be sensed includes a magnetoresistive structure and a detection unit. The magnetoresistive structure varies a resistance depending on a magnetic field caused by the current of the signal to be sensed. Further, the detection unit generates and provides a current detection signal indicating an occurrence of the current strength of interest based on a detected magnitude of the varying resistance of the magnetoresistive structure.
    Type: Application
    Filed: July 11, 2013
    Publication date: January 15, 2015
    Applicant: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Siegfried Krainer, Wolfgang Marbler, Wolfgang Granig
  • Patent number: 8427189
    Abstract: Test structures, systems, and methods for semiconductor devices are disclosed. In one embodiment, a test structure for a semiconductor device includes a winding disposed in at least one conductive material layer of the semiconductor device. At least a portion of the winding extends proximate a perimeter of the semiconductor device. The winding includes a first end and a second end. A first test pad is coupled to the first end of the winding, and a second test pad is coupled to the second end of the winding.
    Type: Grant
    Filed: August 18, 2010
    Date of Patent: April 23, 2013
    Assignee: Infineon Technologies AG
    Inventor: Wolfgang Marbler
  • Publication number: 20100308812
    Abstract: Test structures, systems, and methods for semiconductor devices are disclosed. In one embodiment, a test structure for a semiconductor device includes a winding disposed in at least one conductive material layer of the semiconductor device. At least a portion of the winding extends proximate a perimeter of the semiconductor device. The winding includes a first end and a second end. A first test pad is coupled to the first end of the winding, and a second test pad is coupled to the second end of the winding.
    Type: Application
    Filed: August 18, 2010
    Publication date: December 9, 2010
    Inventor: Wolfgang Marbler
  • Patent number: 7800381
    Abstract: Test structures, systems, and methods for semiconductor devices are disclosed. In one embodiment, a test structure for a semiconductor device includes a winding disposed in at least one conductive material layer of the semiconductor device. At least a portion of the winding extends proximate a perimeter of the semiconductor device. The winding includes a first end and a second end. A first test pad is coupled to the first end of the winding, and a second test pad is coupled to the second end of the winding.
    Type: Grant
    Filed: September 26, 2007
    Date of Patent: September 21, 2010
    Assignee: Infineon Technologies AG
    Inventor: Wolfgang Marbler
  • Publication number: 20090079449
    Abstract: Test structures, systems, and methods for semiconductor devices are disclosed. In one embodiment, a test structure for a semiconductor device includes a winding disposed in at least one conductive material layer of the semiconductor device. At least a portion of the winding extends proximate a perimeter of the semiconductor device. The winding includes a first end and a second end. A first test pad is coupled to the first end of the winding, and a second test pad is coupled to the second end of the winding.
    Type: Application
    Filed: September 26, 2007
    Publication date: March 26, 2009
    Inventor: Wolfgang Marbler