Abstract: A detector for detecting an occurrence of a current strength of interest (e.g. zero current) of a current of a signal to be sensed includes a magnetoresistive structure and a detection unit. The magnetoresistive structure varies a resistance depending on a magnetic field caused by the current of the signal to be sensed. Further, the detection unit generates and provides a current detection signal indicating an occurrence of the current strength of interest based on a detected magnitude of the varying resistance of the magnetoresistive structure.

Abstract: A detector for detecting an occurrence of a current strength of interest (e.g. zero current) of a current of a signal to be sensed includes a magnetoresistive structure and a detection unit. The magnetoresistive structure varies a resistance depending on a magnetic field caused by the current of the signal to be sensed. Further, the detection unit generates and provides a current detection signal indicating an occurrence of the current strength of interest based on a detected magnitude of the varying resistance of the magnetoresistive structure.

Abstract: A detector for detecting an occurrence of a current strength of interest of a current of a signal to be sensed includes a magnetoresistive structure and a detection unit. The magnetoresistive structure varies a resistance depending on a magnetic field caused by the current of the signal to be sensed. Further, the detection unit generates and provides a current detection signal indicating an occurrence of the current strength of interest based on a detected magnitude of the varying resistance of the magnetoresistive structure.

Abstract: A detector for detecting an occurrence of a current strength of interest of a current of a signal to be sensed includes a magnetoresistive structure and a detection unit. The magnetoresistive structure varies a resistance depending on a magnetic field caused by the current of the signal to be sensed. Further, the detection unit generates and provides a current detection signal indicating an occurrence of the current strength of interest based on a detected magnitude of the varying resistance of the magnetoresistive structure.

Abstract: Test structures, systems, and methods for semiconductor devices are disclosed. In one embodiment, a test structure for a semiconductor device includes a winding disposed in at least one conductive material layer of the semiconductor device. At least a portion of the winding extends proximate a perimeter of the semiconductor device. The winding includes a first end and a second end. A first test pad is coupled to the first end of the winding, and a second test pad is coupled to the second end of the winding.

Abstract: Test structures, systems, and methods for semiconductor devices are disclosed. In one embodiment, a test structure for a semiconductor device includes a winding disposed in at least one conductive material layer of the semiconductor device. At least a portion of the winding extends proximate a perimeter of the semiconductor device. The winding includes a first end and a second end. A first test pad is coupled to the first end of the winding, and a second test pad is coupled to the second end of the winding.

Abstract: Test structures, systems, and methods for semiconductor devices are disclosed. In one embodiment, a test structure for a semiconductor device includes a winding disposed in at least one conductive material layer of the semiconductor device. At least a portion of the winding extends proximate a perimeter of the semiconductor device. The winding includes a first end and a second end. A first test pad is coupled to the first end of the winding, and a second test pad is coupled to the second end of the winding.

Abstract: Test structures, systems, and methods for semiconductor devices are disclosed. In one embodiment, a test structure for a semiconductor device includes a winding disposed in at least one conductive material layer of the semiconductor device. At least a portion of the winding extends proximate a perimeter of the semiconductor device. The winding includes a first end and a second end. A first test pad is coupled to the first end of the winding, and a second test pad is coupled to the second end of the winding.