Abstract: An arrangement for an EUV lithography apparatus includes a reflective optical element (60) having an optically effective surface (62) configured to reflect incident EUV radiation, and a filament arrangement (65) configured to produce a reagent that cleans the optically effective surface (62). The filament arrangement (65) has at least one filament (66) configured as a glow or heating element. The at least one filament (66) is arranged along the optically effective surface (62) of the reflective optical element (60) wherein a thickness and/or positioning of the at least one filament (66) are/is chosen so as to minimize an optical influence of the at least one filament (66) in the far field of the EUV radiation reflected by the optically effective surface (62).

Abstract: A cost-effective method for repairing reflective optical elements for EUV lithography. These optical elements (60) have a substrate (61) and a coating (62) that reflects at a working wavelength in the range between 5 nm and 20 nm and is damaged as a result of formation of hydrogen bubbles. The method includes: localizing a damaged area (63, 64, 65, 66) in the coating (62) and covering the damaged area (63, 64, 65, 66) with one or more materials having low hydrogen permeability by applying a cover element to the damaged area. The cover element is formed of a surface structure, a convex or concave surface, or a coating corresponding to the coating of the reflective optical element, or a combination thereof. The method is particularly suitable for collector mirrors (70) for EUV lithography. After the repair, the optical elements have cover elements (71, 72, 73).

Abstract: An arrangement for an EUV lithography apparatus includes a reflective optical element (60) having an optically effective surface (62) configured to reflect incident EUV radiation, and a filament arrangement (65) configured to produce a reagent that cleans the optically effective surface (62). The filament arrangement (65) has at least one filament (66) configured as a glow or heating element. The at least one filament (66) is arranged along the optically effective surface (62) of the reflective optical element (60) wherein a thickness and/or positioning of the at least one filament (66) are/is chosen so as to minimize an optical influence of the at least one filament (66) in the far field of the EUV radiation reflected by the optically effective surface (62).

Abstract: The disclosure relates to an optical element, in particular for a microlithographic projection exposure apparatus. The optical element has an optical effective surface. The optical element includes a substrate, a layer system that is present on the substrate, and a protective cover extending over an edge region of the optical element that is adjacent to the optical effective surface. During operation of the optical element, the protective coating reduces an ingress of hydrogen radicals into the layer system in comparison with an analogous design without the protective cover, wherein a gap is formed between the protective cover and the layer system.

Abstract: An EUV collector for use in an EUV projection exposure apparatus includes at least one mirror surface having surface structures for scattering a used EUV wavelength (?) of used EUV light. The mirror surface has a surface height with a spatial wavelength distribution between a lower limit spatial wavelength and an upper limit spatial wavelength. An effective roughness (rmsG) below the lower limit spatial wavelength (PG) satisfies the following relation: (4? rmsG cos(?)/?)2<0.1. ? denotes an angle of incidence of the used EUV light at the mirror surface. The following applies to an effective roughness (rmsGG?) between the lower limit spatial wavelength (PG) and the upper limit spatial wavelength (PG?): 1.5 rmsG<rmsGG?<6 rmsG.

Abstract: The disclosure relates to an optical element, in particular for a microlithographic projection exposure apparatus. The optical element has an optical effective surface. The optical element includes a substrate, a layer system that is present on the substrate, and a protective cover extending over an edge region of the optical element that is adjacent to the optical effective surface. During operation of the optical element, the protective coating reduces an ingress of hydrogen radicals into the layer system in comparison with an analogous design without the protective cover, wherein a gap is formed between the protective cover and the layer system.

Abstract: A cost-effective method for repairing reflective optical elements for EUV lithography. These optical elements (60) have a substrate (61) and a coating (62) that reflects at a working wavelength in the range between 5 nm and 20 nm and is damaged as a result of formation of hydrogen bubbles. The method includes: localizing a damaged area (63, 64, 65, 66) in the coating (62) and covering the damaged area (63, 64, 65, 66) with one or more materials having low hydrogen permeability by applying a cover element to the damaged area. The cover element is formed of a surface structure, a convex or concave surface, or a coating corresponding to the coating of the reflective optical element, or a combination thereof. The method is particularly suitable for collector mirrors (70) for EUV lithography. After the repair, the optical elements have cover elements (71, 72, 73).

Abstract: An EUV collector for use in an EUV projection exposure apparatus includes at least one mirror surface having surface structures for scattering a used EUV wavelength (?) of used EUV light. The mirror surface has a surface height with a spatial wavelength distribution between a lower limit spatial wavelength and an upper limit spatial wavelength. An effective roughness (rmsG) below the lower limit spatial wavelength (PG) satisfies the following relation: (4 ? rmsG cos(?)/?)2<0.1. ? denotes an angle of incidence of the used EUV light at the mirror surface. The following applies to an effective roughness (rmsGG?) between the lower limit spatial wavelength (PG) and the upper limit spatial wavelength (PG?): 1.5 rmsG<rmsGG?<6 rmsG.

Abstract: An optical assembly (1) includes an optical element (2), a mount (3) configured to hold the optical element (2), and a plurality of fastening elements (12) with fastening areas (14) configured to fasten the optical element (2) to the mount (3). The fastening elements (12) bridge an interstice (11) between the optical element (2) and the mount (3), and a purge device (15) produces at least one purge gas flow (16) in the region of the optical element (2) such that the purge gas flow flows around the fastening areas (14) of the fastening elements (12).

Abstract: An optical assembly (1) includes an optical element (2), a mount (3) configured to hold the optical element (2), and a plurality of fastening elements (12) with fastening areas (14) configured to fasten the optical element (2) to the mount (3). The fastening elements (12) bridge an interstice (11) between the optical element (2) and the mount (3), and a purge device (15) produces at least one purge gas flow (16) in the region of the optical element (2) such that the purge gas flow flows around the fastening areas (14) of the fastening elements (12).

Abstract: An optical system for generating a light beam for treating a substrate in a substrate plane is disclosed. The light beam has a beam length in a first dimension perpendicular to the propagation direction of the light beam and a beam width in a second dimension perpendicular to the first dimension and also perpendicular to the light propagation direction. The optical system includes a mixing optical arrangement which divides the light beam in at least one of the first and second dimensions into a plurality of light paths incident in the substrate plane in a manner superimposed on one another. At least one coherence-influencing optical arrangement is present in the beam path of the light beam and acts on the light beam to at least reduce the degree of coherence of light for at least one light path distance of one light path from at least one other light path.

Abstract: A method is disclosed for the preparation of 1,2-dichloroethane in a reactor by the reaction of gaseous ethylene with chlorine dissolved in a hot, catalyst-containing, liquid circulating stream that is under elevated pressure and consists of chlorinated hydrocarbons. All of the chlorine is absorbed outside of the reactor, at a temperature above 90.degree. C., a pressure of more than 4 bar, and an average residence time of less than 120 seconds. The reaction takes place at the phase boundary surface of a dispersion produced from gaseous ethylene and the chlorine-containing, liquid, circulating stream, at an energy dissipation density of 0.05 to 1000 kilowatts per cubic meter, a temperature of 90.degree. to 200.degree. C., and a pressure of 7 to 20 bar. Iron(III) chloride is used preferably as catalyst. Oxygen is used preferably as inhibitor for preventing the formation of byproducts.

Abstract: An emergency distress signal system for motor vehicles includes a message transmitter for indicating the location of a vehicle and radiating an emergency distress signal, at least one reporting-receiving station for receiving the distress signal, and a sensor disposed in the vehicle for activating the message transmitting means upon the occurrence of a crash.

Abstract: A process for the preparation of dimethyl terephthalate by the oxidation of p-xylene/methyl p-toluate mixtures, preferably with air, esterification of the resulting acid products, and recycling of the methyl p-toluate to the oxidation stage, employs an oxidation catalyst consisting of a combination of cobalt and manganese compounds. The concentration of manganese (Mn.sup.++) ranges between about 0.0001% and about 0.005% by weight.