Patents by Inventor Wolfgang O. W. Schlosser

Wolfgang O. W. Schlosser has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-power III-V semiconductor device
    Patent number: 4498093
    Abstract: III-V semiconductor devices such as, e.g., MESFET, JFET, MOSFET, and IGFET devices are provided with relatively high-ohmic gates or wide gate finger widths as is desirable for maximum utilization of a semiconductor surface. For example, aluminum gate electrodes having a cross-sectional area of 1.2 square micrometer and a length of 300 micrometers or more are used. The resulting devices have unexpectedly high power handling capability.
    Type: Grant
    Filed: September 14, 1981
    Date of Patent: February 5, 1985
    Assignee: AT&T Bell Laboratories
    Inventors: Christopher L. Allyn, Peter G. Flahive, David E. Iglesias, Wolfgang O. W. Schlosser, Stuart H. Wemple
  • GaAs FETs Having long-term stability
    Patent number: 4426656
    Abstract: GaAs FETs exhibit excellent long-term stability if they have a drain ledge, a drain contact with reduced dendrite size, and a silicon nitride passivation layer. Accelerated aging tests at device case temperatures of 250 degrees C. indicate essentially no device failures after 200 hours of observation and a median failure time of approximately 500 hours.
    Type: Grant
    Filed: January 29, 1981
    Date of Patent: January 17, 1984
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventors: James V. DiLorenzo, James C. Hwang, William C. Niehaus, Wolfgang O. W. Schlosser, Stuart H. Wemple