Abstract: A semiconductor laser module having a substrate and having at least one semiconductor laser situated on the substrate, the substrate having a layer structure which includes at least one primary layer which establishes a thermal contact with the semiconductor laser. The semiconductor laser is designed in such a way that it emits heat pulses having a minimum specific heat of approximately 3 mJ per mm2, preferably approximately 5 mJ/mm2, and having a pulse duration of approximately 100 ?s to approximately 2,000 ?s, and the primary layer has a layer thickness which is between approximately 200 ?m and approximately 2,000 ?m, preferably between approximately 400 ?m and approximately 2,000 ?m.

Abstract: A semiconductor laser module having a substrate and having at least one semiconductor laser situated on the substrate, the substrate having a layer structure which includes at least one primary layer which establishes a thermal contact with the semiconductor laser. The semiconductor laser is designed in such a way that it emits heat pulses having a minimum specific heat of approximately 3 mJ per mm2, preferably approximately 5 mJ/mm2, and having a pulse duration of approximately 100 ?s to approximately 2,000 ?s, and the primary layer has a layer thickness which is between approximately 200 ?m and approximately 2,000 ?m, preferably between approximately 400 ?m and approximately 2,000 ?m.