Abstract: The present disclosure relates to heating a substrate in a rapid thermal processing (RTP) chamber. The chamber may contain a rotatable assembly configured to accommodate and rotate the substrate while a heat source inside the RTP chamber applies heat to the substrate. The rotatable assembly is partially disposed outside the RTP chamber. A seal may formed around the rotatable assembly and maintain a vacuum inside the RTP chamber while the rotatable assembly rotates. The rotatable assembly may configured to accommodate various-sized substrates.

Abstract: The present disclosure generally relate to a lamp-heated apparatus for thermally processing a substrate. In particular, embodiments of the present disclosure relate to using a substrate and shield part to separate heating zones in a rapid thermal processing (RTP) chamber. In one implementation, a method of processing substrates includes placing a substrate into a processing chamber on a plurality of lift pins, lifting the substrate with the plurality of lift pins to a pre-heat position coplanar with a flange of a radiation shield, pre-heating the substrate in the pre-heat position with heat from a plurality of lamps, the plurality of lamps positioned above the substrate, lowering the substrate down to a substrate support with the lift pins after the pre-heating, processing the substrate on the substrate support, and removing the substrate from the processing chamber.

Abstract: A method of cleaning a process chamber is provided including supplying a plasma from a remote plasma source to an interior volume of a rapid thermal processing chamber during a first time period, the rapid thermal processing chamber including a plurality of lamps configured to heat an interior volume of the rapid thermal processing chamber; and providing heat from the plurality of lamps to heat the interior volume of the rapid thermal processing chamber during the first time period when the plasma from the remote plasma source is provided to the interior volume of the rapid thermal processing chamber.

Abstract: Aspects of the present disclosure relation to systems, methods, and apparatus for correcting thermal processing of substrates. In one aspect, a corrective absorption factor curve having a plurality of corrective absorption factors is generated.

Abstract: A method for controlling temperature in a thermal processing chamber includes determining temperature sensitivity profiles of one or more heating elements or zones for a substrate based on measurements of the substrate. The method also includes selecting a temperature offset value for each of the one or more heating elements or zones. The method also includes simulating the adjustment of each of the one or more zone offset values to a respective final adjusting value that achieves a predetermined goal. The method further includes adjusting the temperature offset values for each of the one or more heating elements to the respective final adjusted values.

Abstract: Embodiments of the present disclosure generally relate to a reflector plate assembly. The reflector plate assembly includes a reflector plate and a baffle. The reflector plate includes a gas conduit, a plurality of gas passages, a plurality of lift pin holes, and a gas inlet. The gas conduit includes a first opening on a front side of the reflector plate and a second opening on a backside of the reflector plate adjacent to the gas conduit. The baffle is attached at a first end to a support base of an edge ring. The baffle is attached at a second end to the backside of the reflector plate. The baffle forms an opening in the backside of the reflector plate to the gas conduit.

Abstract: Aspects of the present disclosure relate to apparatus, systems, and methods of measuring edge ring distance for thermal processing chambers. In one example, the distance measured is used to determine a center position shift of the edge ring.

Abstract: A method of forming an electrical contact in semiconductor structure includes performing a selective deposition process on a semiconductor structure having a semiconductor region and a dielectric layer having a trench therewithin, the selective deposition process comprising epitaxially forming a contact layer on the semiconductor region within the trench of the dielectric layer, and performing a microwave anneal process to activate dopants in the epitaxially formed contact layer.

Abstract: Embodiments of the present disclosure generally relate to apparatus for processing a substrate, and more specifically to reflector plates for rapid thermal processing. In an embodiment, a reflector plate assembly for processing a substrate is provided. The reflector plate assembly includes a reflector plate body, a plurality of sub-reflector plates disposed within the reflector plate body, and a plurality of pyrometers. A pyrometer of the plurality of pyrometers is coupled to an opening formed in a sub-reflector plate. Chambers including a reflector plate assembly are also described herein.

Abstract: Examples described herein generally relate to apparatus and methods for rapid thermal processing (RTP) of a substrate. The present disclosure discloses pulsed radiation sources used to measure a broad range of low to high temperatures in the RTP chamber, each at a discrete wavelength, are used at a low temperature regime before using one laser at a discrete wavelength for higher temperatures. In another example, a single laser is used for both the low temperature regime and higher temperatures. These methods are useful for detection of a broad range of low to high temperatures in the RTP chamber with varying substrate types.

Abstract: Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.

Abstract: A method and system for including a microwave anneal combined with a nanosecond laser pulse are provided. The method may include applying continuous electromagnetic energy from a first electromagnetic energy source to a substrate, wherein the substrate has a major surface. The method may further include exposing the substrate to laser pulses from a second electromagnetic energy source while applying the continuous electromagnetic energy, wherein exposing the substrate to each pulse of the laser pulses occurs in phase with the continuous electromagnetic energy.

Abstract: Aspects of the present disclosure relate to apparatus, systems, and methods of measuring edge ring distance for thermal processing chambers. In one example, the distance measured is used to determine a center position shift of the edge ring.

Abstract: A method and apparatus for diffusing a dopant within a semiconductor device is described. The method includes performing a dynamic surface anneal in which a substrate is placed inside of a process volume with a mixture of an inert gas and a small amount of oxygen gas. The surface of the substrate is then exposed to one or more rapid laser pulses. The rapid laser bursts diffuse dopant from a doped layer into the substrate. The doped layer is formed during a previous process operation. The temperature and number of laser pulses control the amount of diffusion of the dopant into the substrate. Other dynamic surface anneal operations may be optionally performed before or after the oxygenated dynamic surface anneal operation.

Abstract: Embodiments of the present invention provide apparatus and method for reducing non uniformity during thermal processing. One embodiment provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to rotate the substrate, a sensor assembly configured to measure temperature of the substrate at a plurality of locations, and one or more pulse heating elements configured to provide pulsed energy towards the processing volume.

Abstract: Embodiments of the present disclosure generally relate to apparatus for processing a substrate, and more specifically to reflector plates for rapid thermal processing. In an embodiment, a reflector plate assembly for processing a substrate is provided. The reflector plate assembly includes a reflector plate body, a plurality of sub-reflector plates disposed within the reflector plate body, and a plurality of pyrometers. A pyrometer of the plurality of pyrometers is coupled to an opening formed in a sub-reflector plate. Chambers including a reflector plate assembly are also described herein.

Abstract: The present disclosure relates to heating a substrate in a rapid thermal processing (RTP) chamber. The chamber may contain a rotatable assembly configured to accommodate and rotate the substrate while a heat source inside the RTP chamber applies heat to the substrate. The rotatable assembly is partially disposed outside the RTP chamber. A seal may formed around the rotatable assembly and maintain a vacuum inside the RTP chamber while the rotatable assembly rotates. The rotatable assembly may configured to accommodate various-sized substrates.

Abstract: An apparatus for measuring a temperature of an assembly that is internal to a process chamber. The apparatus may include a light pipe positioned between a lamp radiation filtering window and the assembly, the light pipe has a first end with a bevel configured to redirect infrared radiation emitted from the assembly through the light pipe and has a second end distal to the first end, an optical assembly configured to collimate, filter, and focus infrared radiation from the second end of the light pipe, an optical detector configured to receive an output from the optical assembly and generate at least one signal representative of the infrared radiation, a temperature circuit that transforms the at least one signal into a temperature value, and a controller that is configured to receive the temperature value and to make adjustments to other process parameters of process chamber based on the temperature value.

Abstract: Aspects of the present disclosure relation to systems, methods, and apparatus for correcting thermal processing of substrates. In one aspect, a corrective absorption factor curve having a plurality of corrective absorption factors is generated.

Abstract: A pedestal for a thermal treatment chamber is disclosed that includes a body consisting of an optically transparent material. The body includes a first plate with a perforated surface having a plurality of nozzles formed therein, a first portion of the plurality nozzles formed in the body at an angle that is orthogonal to a plane of the first plate, a second portion of the plurality of nozzles formed in the body in an azimuthal orientation and at an acute angle relative to the plane of the first plate, and a third portion of the plurality nozzles formed in the body in a radial orientation and at an acute angle relative to the plane of the first plate.