Patents by Inventor Wolfgang Reill
Wolfgang Reill has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220140566Abstract: A semiconductor laser diode includes a semiconductor body having an emitter region; and a first connection element that electrically contacts the semiconductor body in the emitter region, wherein the semiconductor body is in contact with the first connection element in the emitter region, at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element, the semiconductor body includes a connection region that directly adjoins the first connection element at the contact area, and the connection region is a highly p-doped layer.Type: ApplicationFiled: January 12, 2022Publication date: May 5, 2022Inventor: Wolfgang Reill
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Patent number: 11245246Abstract: A semiconductor laser diode includes a semiconductor body having an emitter region; and a first connection element that electrically contacts the semiconductor body in the emitter region, wherein the semiconductor body is in contact with the first connection element in the emitter region, and at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element.Type: GrantFiled: May 31, 2017Date of Patent: February 8, 2022Assignee: OSRAM OLED GmbHInventor: Wolfgang Reill
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Publication number: 20190312406Abstract: A semiconductor laser diode includes a semiconductor body having an emitter region; and a first connection element that electrically contacts the semiconductor body in the emitter region, wherein the semiconductor body is in contact with the first connection element in the emitter region, and at least in places in the emitter region, the semiconductor body has a structuring that enlarges a contact area between the semiconductor body and the first connection element.Type: ApplicationFiled: May 31, 2017Publication date: October 10, 2019Applicant: OSRAM Opto Semiconductors GmbHInventor: Wolfgang Reill
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Patent number: 9559497Abstract: A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted along the emission direction. The filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction. The at least one filter element comprises a surface structure comprising a roughening and/or at least one layer comprising a non-transparent material.Type: GrantFiled: November 24, 2015Date of Patent: January 31, 2017Assignee: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
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Patent number: 9559496Abstract: A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction. The filter structure comprises at least one first filter element disposed downstream of the semiconductor layer sequence in the emission direction and it has at least one layer comprising a material that is non-transparent to electromagnetic radiation.Type: GrantFiled: November 24, 2015Date of Patent: January 31, 2017Assignee: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
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Patent number: 9531158Abstract: A laser light source, comprising a semiconductor layer sequence on a substrate and having an active region and a radiation coupling out area having first and second partial regions and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation, the coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction. The filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction and which is remote from the substrate.Type: GrantFiled: November 24, 2015Date of Patent: December 27, 2016Assignee: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
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Patent number: 9407063Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).Type: GrantFiled: February 20, 2015Date of Patent: August 2, 2016Assignee: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
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Publication number: 20160087404Abstract: A laser light source, comprising a semiconductor layer sequence on a substrate and having an active region and a radiation coupling out area having first and second partial regions and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation, the coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction. The filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction and which is remote from the substrate.Type: ApplicationFiled: November 24, 2015Publication date: March 24, 2016Inventors: Alfred LELL, Christoph EICHLER, Wolfgang SCHMID, Soenke TAUTZ, Wolfgang REILL, Dimitri DINI
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Publication number: 20160079733Abstract: A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction. The filter structure comprises at least one first filter element disposed downstream of the semiconductor layer sequence in the emission direction and it has at least one layer comprising a material that is non-transparent to electromagnetic radiation.Type: ApplicationFiled: November 24, 2015Publication date: March 17, 2016Inventors: Alfred LELL, Christoph EICHLER, Wolfgang SCHMID, Soenke TAUTZ, Wolfgang REILL, Dimitri DINI
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Publication number: 20160079734Abstract: A laser light source, comprising a semiconductor layer sequence having an active region and a radiation coupling out area having first and second partial regions, and a filter structure. The active region generates coherent first electromagnetic radiation and incoherent second electromagnetic radiation. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first partial region and by the second partial region. The filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted along the emission direction. The filter structure has at least one filter element arranged on an area of the semiconductor layer sequence which has an extension direction parallel to the emission direction. The at least one filter element comprises a surface structure comprising a roughening and/or at least one layer comprising a non-transparent material.Type: ApplicationFiled: November 24, 2015Publication date: March 17, 2016Inventors: Alfred LELL, Christoph EICHLER, Wolfgang SCHMID, Soenke TAUTZ, Wolfgang REILL, Dimitri DINI
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Publication number: 20150162722Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).Type: ApplicationFiled: February 20, 2015Publication date: June 11, 2015Inventors: Alfred LELL, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
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Patent number: 8976829Abstract: An edge-emitting semiconductor laser is specified. A semiconductor body includes an active zone suitable for producing electromagnetic radiation. At least two facets on the active zone form a resonator. At least two contact points are spaced apart from one another in a lateral direction by at least one intermediate region and are mounted on an outer face of the semiconductor body.Type: GrantFiled: May 9, 2011Date of Patent: March 10, 2015Assignee: Osram Opto Semiconductors GmbHInventors: Harald Koenig, Uwe Strauss, Wolfgang Reill
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Patent number: 8964808Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).Type: GrantFiled: December 17, 2008Date of Patent: February 24, 2015Assignee: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
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Patent number: 8831061Abstract: An edge emitting semiconductor laser chip includes a semiconductor body, which comprises at least one active zone in which electromagnetic radiation is generated during the operation of the semiconductor laser chip. At least one contact strip is arranged on a top surface at a top side of the semiconductor body. At least two delimiting structures are for delimiting the current spreading between the contact strip and the active zone. The delimiting structures are arranged on both sides of the contact strip.Type: GrantFiled: October 21, 2009Date of Patent: September 9, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Christian Lauer, Harald König, Wolfgang Reill, Uwe Strauss
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Publication number: 20130148683Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).Type: ApplicationFiled: December 17, 2008Publication date: June 13, 2013Applicant: OSRAM Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
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Publication number: 20130128909Abstract: An edge-emitting semiconductor laser is specified. A semiconductor body includes an active zone suitable for producing electromagnetic radiation. At least two facets on the active zone form a resonator. At least two contact points are spaced apart from one another in a lateral direction by at least one intermediate region and are mounted on an outer face of the semiconductor body.Type: ApplicationFiled: May 9, 2011Publication date: May 23, 2013Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Harald Koenig, Uwe Strauss, Wolfgang Reill
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Patent number: 8369370Abstract: A laser light source including a semiconductor layer sequence having an active region and a radiation coupling-out area having a first partial region and a second partial region different than the first partial region, and a filter structure. The active region generates, during operation, coherent first electromagnetic radiation having a first wavelength range and incoherent second electromagnetic radiation having a second wavelength range. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first and second partial regions. The second wavelength range includes the first wavelength range, and the filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction.Type: GrantFiled: December 17, 2008Date of Patent: February 5, 2013Assignee: Osram Opto Semiconductors GmbHInventors: Alfred Lell, Christoph Eichler, Wolfgang Schmid, Soenke Tautz, Wolfgang Reill, Dimitri Dini
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Patent number: 8306084Abstract: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active layer having at least two active regions (45) which are suitable for emitting electromagnetic radiation during operation via a side area of the semiconductor layer sequence (10) along an emission direction (90), said side area being embodied as a radiation coupling-out area (12), a respective electrical contact area (30) above each of the at least two active regions (45) on a main surface (14) of the semiconductor layer sequence (10), and a surface structure in the main surface (14) of the semiconductor layer sequence (10), wherein the at least two active regions (45) are arranged in a manner spaced apart from one another in the active layer (40) transversely with respect to the emission direction (90), each of the electrical contact areas (30) has a first partial region (31) and a second partial region (32) having a width that increases along the emission direction (90) toward the radiation coupling-out area (Type: GrantFiled: December 16, 2008Date of Patent: November 6, 2012Assignee: Osram Opto Semiconductors GmbHInventors: Wolfgang Reill, Soenke Tautz, Peter Brick, Uwe Strauss
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Patent number: 8178372Abstract: A method for production of a plurality of semiconductor chips (6) in a wafer composite. A semiconductor layer sequence (2) is grown on a growth substrate (1), metallization (3) is applied to the semiconductor layer sequence (2), a metal layer (4) is electrochemically deposited onto the metallization (3), and the semiconductor layer sequence (2) is then structured and separated to form individual semiconductor chips (6). The electrochemically applied metal layer (4) is particularly suitable for use as a heat spreader, for dissipation of the heat produced by the semiconductor chips (6).Type: GrantFiled: September 28, 2006Date of Patent: May 15, 2012Assignee: OSRAM Opto Semiconductors GmbHInventors: Stephan Lutgen, Tony Albrecht, Wolfgang Reill
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Publication number: 20110243169Abstract: An edge emitting semiconductor laser chip includes a semiconductor body, which comprises at least one active zone in which electromagnetic radiation is generated during the operation of the semiconductor laser chip. At least one contact strip is arranged on a top surface at a top side of the semiconductor body. At least two delimiting structures are for delimiting the current spreading between the contact strip and the active zone. The delimiting structures are arranged on both sides of the contact strip.Type: ApplicationFiled: October 21, 2009Publication date: October 6, 2011Applicant: OSRAM Opto Semiconductors GmbHInventors: Christian Lauer, Harald König, Wolfgang Reill, Uwe Strauss