Abstract: In an embodiment, an electrostatic discharge (ESD) circuit for providing protection between a first node and a second node includes a first MOS device having a first source/drain coupled to a first node, and a second source/drain coupled to an intermediate node. The ESD circuit also includes a first capacitor coupled between a gate of the first MOS device and the first node, a first resistor coupled between the gate of the first MOS device the intermediate node, a second MOS device having a first source/drain coupled to the intermediate node, and a second source/drain coupled to the second node, a second capacitor coupled between a gate of the second MOS device and the first node, and a second resistor coupled between the gate of the second MOS device and the second node.

Abstract: Techniques and architectures corresponding to electrostatic discharge clamping circuits with tracing circuitry are described.

Abstract: In an embodiment, an electrostatic discharge (ESD) circuit for providing protection between a first node and a second node includes a first MOS device having a first source/drain coupled to a first node, and a second source/drain coupled to an intermediate node. The ESD circuit also includes a first capacitor coupled between a gate of the first MOS device and the first node, a first resistor coupled between the gate of the first MOS device the intermediate node, a second MOS device having a first source/drain coupled to the intermediate node, and a second source/drain coupled to the second node, a second capacitor coupled between a gate of the second MOS device and the first node, and a second resistor coupled between the gate of the second MOS device and the second node.

Abstract: In an embodiment, an electrostatic discharge (ESD) circuit for providing protection between a first node and a second node includes a first MOS device having a first source/drain coupled to a first node, and a second source/drain coupled to an intermediate node. The ESD circuit also includes a first capacitor coupled between a gate of the first MOS device and the first node, a first resistor coupled between the gate of the first MOS device the intermediate node, a second MOS device having a first source/drain coupled to the intermediate node, and a second source/drain coupled to the second node, a second capacitor coupled between a gate of the second MOS device and the first node, and a second resistor coupled between the gate of the second MOS device and the second node.

Abstract: Techniques and architectures corresponding to electrostatic discharge blocking circuits are described.

Abstract: Embodiments of this disclosure relate to electrostatic discharge (ESD) protection techniques. For example, some embodiments include a variable resistor that selectively shunts power of an incoming ESD pulse from a first circuit node to a second circuit node and away from a semiconductor device. A control voltage provided to the variable resistor causes the transistor to change between a fully-off mode where only sub-threshold current, if any, flows; a fully-on mode wherein a maximum amount of current flows; and an analog mode wherein an intermediate and time-varying amount of current flows. In particular, the analog mode allows the ESD protection device to shunt power more precisely than previously achievable, such that the ESD protection device can protect semiconductor devices from ESD pulses.

Abstract: An embodiment semiconductor device has a first device region disposed on a second device region within an ESD device region disposed within a semiconductor body. Also included is a third device region disposed on the second device region, a fourth device region adjacent to the second device region, a fifth device region disposed within the fourth device region, and a sixth device region adjacent to the fourth device region. The first and fourth regions have a first semiconductor type, and the second, third, fifth and sixth regions have a second conductivity type opposite the first conductivity type. An interface between the fourth device region and the sixth device region forms a diode junction. The first, second, fourth and fifth device regions form a silicon controlled rectifier.

Abstract: A method and a system for ESD protection are provided. In one embodiment, the system comprises a circuit comprising at least one non-linear element, an application module configured to apply a set of current pulses to the circuit, a determination module configured to determine at least one frequency-dependent and amplitude-dependent transfer function of the circuit based on the set of applied current pulses, a modeling module configured to model at least one frequency-dependent and current-dependent impedance of the at least one non-linear element, and a simulation module to simulate a transmission to the circuit based on the model.

Abstract: Embodiments of this disclosure relate to electrostatic discharge (ESD) protection techniques. For example, some embodiments include a variable resistor that selectively shunts power of an incoming ESD pulse from a first circuit node to a second circuit node and away from a semiconductor device. A control voltage provided to the variable resistor causes the transistor to change between a fully-off mode where only sub-threshold current, if any, flows; a fully-on mode wherein a maximum amount of current flows; and an analog mode wherein an intermediate and time-varying amount of current flows. In particular, the analog mode allows the ESD protection device to shunt power more precisely than previously achievable, such that the ESD protection device can protect semiconductor devices from ESD pulses.

Abstract: Implementations are presented herein that include an electrostatic discharge (ESD) protection circuit. The ESD protection circuit includes a first transistor and a second transistor. The first transistor has a first terminal that is coupled to a first supply line and a bulk that is coupled to a second supply line. The second transistor has a first terminal that is coupled to the second supply line, a bulk that is coupled to the first supply line and a second terminal that is coupled to a second terminal of the first transistor to define a protected node. The ESD protection circuit further includes a current limiting element that has a first terminal that is coupled to the protected node.

Abstract: In an embodiment, an electrostatic discharge (ESD) circuit for providing protection between a first node and a second node includes a first MOS device having a first source/drain coupled to a first node, and a second source/drain coupled to an intermediate node. The ESD circuit also includes a first capacitor coupled between a gate of the first MOS device and the first node, a first resistor coupled between the gate of the first MOS device the intermediate node, a second MOS device having a first source/drain coupled to the intermediate node, and a second source/drain coupled to the second node, a second capacitor coupled between a gate of the second MOS device and the first node, and a second resistor coupled between the gate of the second MOS device and the second node.

Abstract: Techniques and architectures corresponding to electrostatic discharge clamping circuits with tracing circuitry are described.

Abstract: Techniques and architectures corresponding to electrostatic discharge blocking circuits are described.

Abstract: A semiconductor device for protecting against an electro static discharge is disclosed. In one embodiment, the semiconductor device includes a first low doped region disposed in a substrate, a first heavily doped region disposed within the first low doped region, the first heavily doped region comprising a first conductivity type, and the first low doped region comprising a second conductivity type, the first and the second conductivity types being opposite, the first heavily doped region being coupled to a node to be protected. The semiconductor device further includes a second heavily doped region coupled to a first power supply potential node, the second heavily doped region being separated from the first heavily doped region by a portion of the first low doped region, and a second low doped region disposed adjacent the first low doped region, the second low doped region comprising the first conductivity type.

Abstract: A method and a system for ESD protection are provided. In one embodiment, the system comprises a circuit comprising at least one non-linear element, an application module configured to apply a set of current pulses to the circuit, a determination module configured to determine at least one frequency-dependent and amplitude-dependent transfer function of the circuit based on the set of applied current pulses, a modeling module configured to model at least one frequency-dependent and current-dependent impedance of the at least one non-linear element, and a simulation module to simulate a transmission to the circuit based on the model.

Abstract: An embodiment semiconductor device has a first device region disposed on a second device region within an ESD device region disposed within a semiconductor body. Also included is a third device region disposed on the second device region, a fourth device region adjacent to the second device region, a fifth device region disposed within the fourth device region, and a sixth device region adjacent to the fourth device region. The first and fourth regions have a first semiconductor type, and the second, third, fifth and sixth regions have a second conductivity type opposite the first conductivity type. An interface between the fourth device region and the sixth device region forms a diode junction. The first, second, fourth and fifth device regions form a silicon controlled rectifier.

Abstract: The invention relates to a high-frequency integrated circuit requiring ESD protection for a circuit node. One or more metallic layer is deposited within the integrated circuit and patterned to form a transmission line. The metallic layers are generally already present in the integrated circuit for signal routing. The transmission line is coupled between the circuit node and a terminal of an ESD protection device, with a transmission line return conductor coupled to a high-frequency ground. The transmission line is formed with an electrical length that transforms the impedance of the ESD protection device substantially into an open circuit at the circuit node at an operational frequency of the integrated circuit. The other terminal of the ESD protection device is coupled to the high-frequency ground.

Abstract: Embodiments of this disclosure relate to electrostatic discharge (ESD) protection techniques. For example, some embodiments include a variable resistor that selectively shunts power of an incoming ESD pulse from a first circuit node to a second circuit node and away from a semiconductor device. A control voltage provided to the variable resistor causes the transistor to change between a fully-off mode where only sub-threshold current, if any, flows; a fully-on mode wherein a maximum amount of current flows; and an analog mode wherein an intermediate and time-varying amount of current flows. In particular, the analog mode allows the ESD protection device to shunt power more precisely than previously achievable, such that the ESD protection device can protect semiconductor devices from ESD pulses.

Abstract: The invention relates to a high-frequency integrated circuit requiring ESD protection for a circuit node. One or more metallic layer is deposited within the integrated circuit and patterned to form a transmission line. The metallic layers are generally already present in the integrated circuit for signal routing. The transmission line is coupled between the circuit node and a terminal of an ESD protection device, with a transmission line return conductor coupled to a high-frequency ground. The transmission line is formed with an electrical length that transforms the impedance of the ESD protection device substantially into an open circuit at the circuit node at an operational frequency of the integrated circuit. The other terminal of the ESD protection device is coupled to the high-frequency ground.

Abstract: Implementations are presented herein that include an electrostatic discharge (ESD) protection circuit. The ESD protection circuit includes a first transistor and a second transistor. The first transistor has a first terminal that is coupled to a first supply line and a bulk that is coupled to a second supply line. The second transistor has a first terminal that is coupled to the second supply line, a bulk that is coupled to the first supply line and a second terminal that is coupled to a second terminal of the first transistor to define a protected node. The ESD protection circuit further includes a current limiting element that has a first terminal that is coupled to the protected node.