Abstract: Disclosed are methods and apparatus for inspecting and processing semiconductor wafers. The system includes an edge detection system for receiving each wafer that is to undergo a photolithography process. The edge detection system comprises an illumination channel for directing one or more illumination beams towards a side, top, and bottom edge portion that are within a border region of the wafer. The edge detection system also includes a collection module for collecting and sensing output radiation that is scattered or reflected from the edge portion of the wafer and an analyzer module for locating defects in the edge portion and determining whether each wafer is within specification based on the sensed output radiation for such wafer. The photolithography system is configured for receiving from the edge detection system each wafer that has been found to be within specification. The edge detection system is coupled in-line with the photolithography system.

Abstract: Disclosed are methods and apparatus for inspecting and processing semiconductor wafers. The system includes an edge detection system for receiving each wafer that is to undergo a photolithography process. The edge detection system comprises an illumination channel for directing one or more illumination beams towards a side, top, and bottom edge portion that are within a border region of the wafer. The edge detection system also includes a collection module for collecting and sensing output radiation that is scattered or reflected from the edge portion of the wafer and an analyzer module for locating defects in the edge portion and determining whether each wafer is within specification based on the sensed output radiation for such wafer. The photolithography system is configured for receiving from the edge detection system each wafer that has been found to be within specification. The edge detection system is coupled in-line with the photolithography system.

Abstract: An apparatus (1) for the optical inspection of wafers is disclosed, which comprises an assembly unit (10) which carries optical elements (30, 31, 32, 33) of at least one illumination path (3) for a bright field illumination and optical elements (50, 51, 52, 60, 61, 62, 70, 71, 72, 80, 81, 82) of at least one illumination path (5, 6, 7, 8) for a dark field illumination. The assembly unit (10) furthermore carries plural optical elements (91, 92, 93, 94, 95, 96, 97, 98, 99, 100) of at least one detection path (91, 92). An imaging optical element (32) of the at least one illumination path (3) for the bright field illumination (30), imaging optical elements (51, 61, 71, 81) of the at least one illumination path for the dark field illumination, and imaging optical elements (91, 95, 96) of the at least one detection path (9) are designed in such a way that all illumination paths (3, 5, 6, 7, 8) and all detection paths (91, 92) are telecentric.

Abstract: A device for evaluating defects in the edge area of a wafer (6) is disclosed. The evaluation may also be performed automatically. In particular, the device includes three cameras (25, 26, 27), each provided with an objective (30), wherein a first camera (25) is arranged such that the first camera (25) is opposite to an edge area on the upper surface (6a) of the wafer (6), wherein a second camera (26) is arranged such that the second camera (26) is opposite to a front surface (6b) of the wafer (6), and wherein a third camera (27) is arranged such that the third camera (27) is opposite to an edge area on the lower surface (6c) of the wafer (6).

Abstract: An apparatus (1) for the optical inspection of wafers is disclosed, which comprises an assembly unit (10) which carries optical elements (30, 31, 32, 33) of at least one illumination path (3) for a bright field illumination and optical elements (50, 51, 52, 60, 61, 62, 70, 71, 72, 80, 81, 82) of at least one illumination path (5, 6, 7, 8) for a dark field illumination. The assembly unit (10) furthermore carries plural optical elements (91, 92, 93, 94, 95, 96, 97, 98, 99, 100) of at least one detection path (91, 92). An imaging optical element (32) of the at least one illumination path (3) for the bright field illumination (30), imaging optical elements (51, 61, 71, 81) of the at least one illumination path for the dark field illumination, and imaging optical elements (91, 95, 96) of the at least one detection path (9) are designed in such a way that all illumination paths (3, 5, 6, 7, 8) and all detection paths (91, 92) are telecentric.

Abstract: A method, a device and the application for the inspection of defects on the edge region of a wafer (6) is disclosed. At least one illumination device (41) illuminates the edge region (6a) of the wafer (6). At least one optical unit (40) is provided, said optical unit (40) being positionable subject to the position of the defect (88) relative to a top surface (30) of the edge of the wafer (6a) or a bottom surface (31) of the edge of the wafer (6a) or a face (32) of the edge of the wafer (6a) for capturing an image of said defect.

Abstract: The invention relates to an objective for a microscope for dark field microscopy having alternating illumination with grazing incidence. A dark field objective is shown having a front lens for receiving light from a sample and having a dark field illumination device for guiding illumination light onto the sample, the dark field illumination device comprising at least one pair of light decoupling elements, which are each situated in pairs around the front lens opposite to the optical axis for counter parallel illumination of the sample.

Abstract: A device and a method for scanning the whole surface of a wafer are disclosed. The wafer is deposited on a table movable in the X-coordinate direction and in the Y-coordinate direction. A camera and at least one illumination source are arranged opposite the wafer. The camera is a line camera with a detector row, wherein the length of the detector row is less than the diameter of the wafer.

Abstract: A device for evaluating defects in the edge area of a wafer (6) is disclosed. The evaluation may also be performed automatically. In particular, the device includes three cameras (25, 26, 27), each provided with an objective (30), wherein a first camera (25) is arranged such that the first camera (25) is opposite to an edge area on the upper surface (6a) of the wafer (6), wherein a second camera (26) is arranged such that the second camera (26) is opposite to a front surface (6b) of the wafer (6), and wherein a third camera (27) is arranged such that the third camera (27) is opposite to an edge area on the lower surface (6c) of the wafer (6).

Abstract: An apparatus for inspecting a wafer, comprising at least one illuminator each arranged in an illumination beam path, wherein the at least one illuminator radiates an illumination spot onto a surface of the wafer and being a continuous light source; a detector arranged in a detection beam path has a predetermined spectral sensitivity and records data from the at least one illumination spot from the surface of the wafer; an imager generating a relative movement between the surface of the wafer and the detector, whereby in a meandering movement the illumination spot is passed across the entire surface of the wafer in the scanning direction; and the at least one illumination spot being detected in a plurality of different spectral ranges.

Abstract: An apparatus for inspecting a wafer, comprising a first illuminator for radiating an illumination beam in a first illumination beam path onto a surface of the wafer and being configured as continuous light source; a second illuminator for radiating an illumination light beam in a second illumination beam path onto a surface of the wafer and being configured as continuous light source; a first detector means defining a first detection beam path; a second detector means defining a second detection beam path, wherein the first and the second detector means have a predetermined spectral sensitivity and detect data of at least an illuminated area moveable in a scanning direction on the surface of the wafer in a plurality of different spectral ranges.

Abstract: An apparatus for measuring feature widths on masks 1 for the semiconductor industry is disclosed. The apparatus encompasses a carrier plate 16 that is retained in vibrationally decoupled fashion in a base frame 14; a scanning stage 18, arranged on the carrier plate 16, that carries a mask 1 to be measured, the mask 1 defining a surface 4; and an objective 2 arranged opposite the mask 1. A liquid 25 is provided between the objective 2 and the surface 4 of the mask 1.

Abstract: A method is disclosed for selecting a minimum of one wavelength 320 or a minimum of one wavelength range 206 of electromagnetic radiation to be used for object testing, whereby a first spectrum is captured or calculated on a first point of a first object 509, a second spectrum is captured or calculated on a second point of the first 509 or a second object, a difference spectrum is formed from the first and the second spectrum, and the minimum of one wavelength 320 or minimum of one wavelength range 26 is selected in the difference spectrum according to predetermined criteria; as well as a microscope 500 with means of the illumination 502, capture 503, and analysis 504, whereby the illumination means illuminate an object 509, and the capture means capture a first spectrum on a first point on a first object, the capture means capture a second spectrum on a second point of the first or on a second object, and the analysis means form a difference spectrum as a difference between the first and the second spectrum.

Abstract: Examination devices and methods operating with incident light have hitherto been used for the examination of wafers. To allow these devices also to be used with the transmitted-light method, it is proposed to configure the substrate holder (16) so that an illumination device (38, 40, 42) is integrated into the substrate holder (16) in such a way that transmitted-light illumination of the wafer (18) is possible.

Abstract: Examination devices and methods operating with incident light have hitherto been used for the examination of wafers. To allow these devices also to be used with the transmitted-light method, it is proposed to configure the substrate holder (16) so that an illumination device (38, 40, 42) is integrated into the substrate holder (16) in such a way that transmitted-light illumination of the wafer (18) is possible.

Abstract: An apparatus for measuring feature widths on masks 1 for the semiconductor industry is disclosed. The apparatus encompasses a carrier plate 16 that is retained in vibrationally decoupled fashion in a base frame 14; a scanning stage 18, arranged on the carrier plate 16, that carries a mask 1 to be measured, the mask 1 defining a surface 4; and an objective 2 arranged opposite the mask 1. A liquid 25 is provided between the objective 2 and the surface 4 of the mask 1.

Abstract: An illumination device for a DUV microscope has an illumination beam path, proceeding from a DUV light source in which are arranged a condenser and a reflection filter system which generates a DUV wavelength band and comprises four reflection filters. At these, the illumination beam is reflected in each case at the same reflection angle &agr;, the illumination beam path extending coaxially in front of and behind the reflection filter system. According to the present invention, the reflection angle &agr;=30° and the DUV wavelength band &lgr;DUV+&Dgr;&lgr; has a half-value width of max. 20 nm and a peak with a maximum value S of more than 90% of the incoming light intensity. The resulting very narrow half-value width of the DUV wavelength band makes it possible for the DUV objectives of the DUV microscope to be very well-corrected.

Abstract: A method for the manufacture of quasi-monochromatic microscope dry objectives for a wavelength range from 190 to 360 nanometers proceeds from a basic objective with a specified number of lenses. The basic objective is corrected for a specified wavelength with respect to image aberrations. By using lenses with slightly different production thicknesses and by arranging the lenses at different air separations, objectives for other areas of application are created. All of the objectives have the same number of lenses and virtually the same resolution. The data for three objectives derived from a basic objective are provided as an example.