Abstract: The invention concerns a semiconductor component with at east one lateral region which is provided to accommodate a lateral electric field strength, whereby the semiconductor body within the body and/or in regions proximal to the surface of the semiconductor body at least over regions thereof has a lateral three-dimensional structure which has vertical recesses in the semiconductor body within which there are electrical conductors which are smaller than in the intervening spaces of the semiconductor body between the recesses, as well as a method for making and of using the semiconductor component.

Abstract: A semiconductor component having impurity atoms introduced by implantation which are subsequently electrically activated by way of an annealing process. Immediately after the annealing process, the component has a mean surface roughness of less than 15 nm and at least 10% of the implanted impurity atoms are electrically activated.

Abstract: A semiconductor component with at least one lateral semiconductor structure with a high breakdown voltage including a substrate, a dielectric layer adjoining the substrate, a low-doped semiconductor zone disposed on the dielectric layer and heavily doped semiconductor zones of the semiconductor component which project into the low-doped semiconductor zone from the direction of the outer surface of the semiconductor component. Fixed charges, which reduce the electrical field strength in the blocking component of the lateral structure, are embedded inside the dielectric layer adjoining the substrate at least opposite that area of the low-doped semiconductor zone which, in the blocking state of the semiconductor component, has a high voltage in respect to the substrate.

Abstract: A semiconductor structure having one or a plurality of lateral, high-blocking semiconductor components in a semiconductor of a metalized substrate (2), a dielectric layer (3) contiguous to the substrate, a homogeneously doped drift zone (4) disposed above the dielectric layer, and having heavily-doped zones of the semiconductor components which are formed in or extend into the drift zone and are electrically contacted. At least the zones (5, 6) of the semiconductor components, which can have a high potential difference with respect to the substrate during operational functioning mode of the semiconductor components, extend up to the dielectric layer (3).