Abstract: In a method of adjusting an optical parameter of an exposure apparatus, a photolithographic projection is performed using an exposure apparatus and using a layout pattern so as to provide measured layout data with different focus settings of the exposure apparatus. An optical model is provided including at least one optical parameter and a simulated image is created by using the optical model and the layout pattern. The optical model is optimized by modifying the optical parameter.

Abstract: A wafer holder has a set of minimum contact wafer support members predefining support member contacting portions on a planar wafer surface of a wafer. The wafer chuck has a wafer support region for contacting the planar wafer surface. The wafer support region of the chuck includes recesses configured at predefined positions corresponding to support member contacting portions of the lower wafer surface. The wafer handling system further includes a wafer transport device including a rotational position adjusting device for adjusting the rotational position of a wafer that is transported between the wafer holder and the wafer chuck. Thereby, elevations on the lower wafer surface, like scratches or deposited material which are produced by the contact between the support members and the wafer, are encapsulated by the recesses of the wafer chuck. A method for moving a wafer between a wafer holder and a wafer chuck is also provided.

Abstract: A recycling procedure for 300 mm nitride dummy wafers which have a stabilization layer of silicon dioxide is provided. The recycling procedure is essentially based on selectively wet etching the deposited silicon nitride with respect to the silicon dioxide stabilization layer, preferably with hot phosphoric acid at 160° C. In particular, a method of handling a silicon wafer which is employed as a dummy wafer during a nitride deposition process includes the steps of depositing a silicon dioxide layer on the wafer surface, performing the nitride deposition process on the wafer to deposit silicon nitride or silicon oxinitride on the wafer surface until a predetermined layer thickness is reached, and etching the silicon nitride or silicon oxinitride layer selectively with respect to the silicon dioxide layer.

Abstract: A wafer holder has a set of minimum contact wafer support members predefining support member contacting portions on a planar wafer surface of a wafer. The wafer chuck has a wafer support region for contacting the planar wafer surface. The wafer support region of the chuck includes recesses configured at predefined positions corresponding to support member contacting portions of the lower wafer surface. The wafer handling system further includes a wafer transport device including a rotational position adjusting device for adjusting the rotational position of a wafer that is transported between the wafer holder and the wafer chuck. Thereby, elevations on the lower wafer surface, like scratches or deposited material which are produced by the contact between the support members and the wafer, are encapsulated by the recesses of the wafer chuck. A method for moving a wafer between a wafer holder and a wafer chuck is also provided.

Abstract: A recycling procedure for 300 mm nitride dummy wafers which have a stabilization layer of silicon dioxide is provided. The recycling procedure is essentially based on selectively wet etching the deposited silicon nitride with respect to the silicon dioxide stabilization layer, preferably with hot phosphoric acid at 160° C. In particular, a method of handling a silicon wafer which is employed as a dummy wafer during a nitride deposition process includes the steps of depositing a silicon dioxide layer on the wafer surface, performing the nitride deposition process on the wafer to deposit silicon nitride or silicon oxinitride on the wafer surface until a predetermined layer thickness is reached, and etching the silicon nitride or silicon oxinitride layer selectively with respect to the silicon dioxide layer.