Abstract: The disclosure relates to a method of determining a velocity profile for the movement of a substrate to be coated relative to a coating source.

Abstract: The disclosure relates to a method of determining a velocity profile for the movement of a substrate to be coated relative to a coating source.

Abstract: A system and method for treating a substrate in a reaction chamber. A transfer chamber is arranged between a first lock and a second lock, wherein the second lock is provided between the transfer chamber and the reaction chamber. A substrate is transferred into the transfer chamber through the first lock, and the first lock is closed. In a next step, the transfer chamber is flooded with the same gas as in the reaction chamber and the pressure and temperature of the gaseous atmosphere in the transfer chamber is controlled to be the same as in the reaction chamber. Then, the second lock is opened and the substrate is transferred from the transfer chamber into the reaction chamber to treat the substrate. A computer program product for carrying out the above method.

Abstract: The invention relates to a target for coating a substrate with an alloy by means of cathode sputtering, said alloy having at least one first material and one second material as alloy components. The surface of the target has at least one first section made of the first material and one second section made of the second material. The two sections adjoin each other and form a common boundary line. The invention further relates to a device and a method for coating a substrate with an alloy by means of cathode sputtering using the target according to the invention.

Abstract: A system and method for treating a substrate in a reaction chamber. A transfer chamber is arranged between a first lock and a second lock, wherein the second lock is provided between the transfer chamber and the reaction chamber. A substrate is transferred into the transfer chamber through the first lock, and the first lock is closed. In a next step, the transfer chamber is flooded with the same gas as in the reaction chamber and the pressure and temperature of the gaseous atmosphere in the transfer chamber is controlled to be the same as in the reaction chamber. Then, the second lock is opened and the substrate is transferred from the transfer chamber into the reaction chamber to treat the substrate. A computer program product for carrying out the above method.

Abstract: The invention relates to a target for coating a substrate with an alloy by means of cathode sputtering, said alloy having at least one first material and one second material as alloy components. The surface of the target has at least one first section made of the first material and one second section made of the second material. The two sections adjoin each other and form a common boundary line. The invention further relates to a device and a method for coating a substrate with an alloy by means of cathode sputtering using the target according to the invention.

Abstract: The invention relates to a method for heating/cooling and coating a substrate in a vacuum chamber, comprising the following steps: (1) arranging the lower face of the substrate on a substrate holder, (2) lifting the substrate by a predefined distance relative to the substrate holder, and (3) heating the lifted substrate via its upper face by means of a heating device such as a radiant heating device, (4) coating the hot substrate, for example by moving it in or through a coating zone, (5) cooling the substrate by lowering it onto the chuck and (6) optionally further coating the cold substrate. The method according to the invention further enables process sequences to be executed, wherein various defined temperatures can be set on the substrate during each step, and optionally one or more coating processes can be executed immediately subsequently at said substrate temperature.

Abstract: An apparatus for coating a substrate has a vacuum chamber designed to receive the substrate and at least one sputtering target to be ablated during operation of the apparatus by particle bombardment. At least one window is arranged in the wall of the vacuum chamber. A device for determining the wear of the sputtering target, by optically measuring the distance between at least one predefinable point outside the vacuum chamber and at least one predefinable point on the surface of the sputtering target, and including an evaluation device correcting for any parallax offset and/or a geometric distortion.

Abstract: The invention relates to a sputtering cathode (1) for coating a substrate (6), which comprises a device (5) for generating an external magnetic field with substantially parallel magnetic field lines (8) substantially in the plane of the substrate. The invention further relates to a device and a method for coating a substrate with several layers, whereby several sputtering cathodes are disposed in a circle with their target effective areas pointing radially outward.

Abstract: The invention relates to a sputtering cathode (1) for coating a substrate (6), which comprises a device (5) for generating an external magnetic field with substantially parallel magnetic field lines (8) substantially in the plane of the substrate. The invention further relates to a device and a method for coating a substrate with several layers, whereby several sputtering cathodes are disposed in a circle with their target effective areas pointing radially outward.

Abstract: An arrangement and method orients the magnetization direction of magnetic layers on a plate shaped substrate on a mounting. The mounting defines a positioning plane for the substrate and a magnet arrangement is on one side of the positioning plane. The magnet arrangement has at least three electromagnets whose dipole axes are at least approximately parallel to the positioning plane and, viewed perpendicularly to the positioning plane, define a closed surface.

Abstract: An arrangement and method orients the magnetization direction of magnetic layers on a plate shaped substrate on a mounting. The mounting defines a positioning plane for the substrate and a magnet arrangement is on one side of the positioning plane. The magnet arrangement has at least three electromagnets whose dipole axes are at least approximately parallel to the positioning plane and, viewed perpendicularly to the positioning plane, define a closed surface.

Abstract: In an apparatus for coating substrates (9), especially with magnetizable materials such as NiFe, with a circular, disk-shaped, rotatably supported substrate holder (3), which is subjected to an HF bias voltage, which is provided around its circumference and on the back with dark-space shield (1), and which rotates under at least one opposing cathode (7), and with a device for generating a magnetic field (13) parallel to the plane of the substrate (9), the magnetic field is generated by an electromagnet, the exciter coil of which, together with the lower part of the yoke (10), is housed in the dark-space shield (1), whereas the extended pole pieces (12, 12'), which are electrically insulated from the coil yoke (10) via the dark space gap (2), are housed in the substrate holder (3) in proximity to the substrate (9).

Abstract: An AC voltage source connected to at least one cathode is switched off rapidly upon the occurrence of a critical number of so-called "microarcs" which precede a "large arc". In order to be able to differentiate between large arcs and microarcs, a special counting and evaluation device is provided.

Abstract: A pair of magnetron cathodes in an evacuable coating chamber are connected to the outputs of the secondary winding of a transformer, the primary winding being connected to the outputs of a medium frequency A.C. generator. An oval target is mounted on each cathode and surrounded by stainless steel bars. As an alternative the bars may be configured as plates connected to ground and mounted to the target by insulating spacers.

Abstract: In a magnetron sputtering cathode for vacuum coating apparatus with a circular target plate and a plurality of magnet arrangements arranged behind the target plate and with a drive means for the continuous rotation of at least one of the magnet arrangements (12, 12') about the central axis A of the target plate, there is provided, in the radially outer marginal area of the target plate, a first magnet arrangement (15, 15', . . .) for the production of a magnetic tunnel section substantially concentric with the axis of rotation A, and between the axis of rotation A and the first magnet arrangement (15, 15', . . .) and, between the axis of rotation A and the first magnet arrangement (15, 15', . . .), a second magnet arrangement (12, 12') offset radially inwardly, and a third magnet arrangement (11, 11', . . .) which cooperate with the first magnet arrangement (15, 15', . . .

Abstract: A stationary magnetron sputtering cathode for vacuum coating systems for substrates 17 passing in front of the cathode 10 on a circular path K and disposed on a substrate holder 4 has a circular disk-like yoke plate 15, and a first group or row of magnets 14b, 14b'. . . , essentially forming a closed circular ring, is provided in the marginal zone of the yoke plate 15 and a second group or row of magnets 14a, 14a'. . . , forming a random but essentially symmetric configuration, is provided in the center of the yoke plate 15. The segment of the magnetic tunnel located in the half (III+IV) of the yoke plate 15 which faces away from the rotating shaft 5 of the substrate holder 4 has a greater total length than the tunnel segment provided on the half (I+II) of yoke plate 15 facing toward the rotating shaft 5.