Patents by Inventor Won-bae Jang

Won-bae Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor process evaluation methods including variable ion implanting conditions
    Patent number: 7972874
    Abstract: Semiconductor process evaluation methods perform multiple scans of a test semiconductor substrate (e.g., test wafer) using ion beams under different ion implanting conditions. Parameters of the test semiconductor substrate that was scanned using the ion beams under different ion implanting conditions are then measured to conduct the semiconductor process evaluation.
    Type: Grant
    Filed: July 12, 2010
    Date of Patent: July 5, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Won-bae Jang, Seung-chul Kim, Chan-seung Choi, Min-suk Kim, Chee-wan Kim, Sun-yong Lee, Sang-rok Hah
  • SEMICONDUCTOR PROCESS EVALUATION METHODS INCLUDING VARIABLE ION IMPLANTING CONDITIONS
    Publication number: 20100279442
    Abstract: Semiconductor process evaluation methods perform multiple scans of a test semiconductor substrate (e.g., test wafer) using ion beams under different ion implanting conditions. Parameters of the test semiconductor substrate that was scanned using the ion beams under different ion implanting conditions are then measured to conduct the semiconductor process evaluation.
    Type: Application
    Filed: July 12, 2010
    Publication date: November 4, 2010
    Inventors: Won-bae Jang, Seung-chul Kim, Chan-seung Choi, Min-suk Kim, Chee-wan Kim, Sun-yong Lee, Sang-rok Hah
  • Semiconductor process evaluation methods including variable ion implanting conditions
    Patent number: 7781234
    Abstract: Semiconductor process evaluation methods perform multiple scans of a test semiconductor substrate (e.g., test wafer) using ion beams under different ion implanting conditions. Parameters of the test semiconductor substrate that was scanned using the ion beams under different ion implanting conditions are then measured to conduct the semiconductor process evaluation.
    Type: Grant
    Filed: November 28, 2006
    Date of Patent: August 24, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Won-bae Jang, Seung-chul Kim, Chan-seung Choi, Min-suk Kim, Chee-wan Kim, Sun-yong Lee, Sang-rok Hah
  • Ion implantation system having variable screen aperture and ion implantation method using the same
    Publication number: 20070173043
    Abstract: An ion implantation system includes a source portion, a beam line portion, a target chamber having a platen, and a Faraday portion having a dose cup and a first variable screen aperture, wherein the platen is capable of moving in a second direction and supporting a semiconductor substrate, and the first variable screen aperture includes a first opening having a first adjustable width along a first direction.
    Type: Application
    Filed: January 19, 2007
    Publication date: July 26, 2007
    Inventors: Seung-hee Lee, Young-soo Yang, Seung-chul Kim, Chan-seung Choi, Won-bae Jang, Min-suk Kim
  • Semiconductor Process Evaluation Methods Including Variable Ion Implanting Conditions
    Publication number: 20070155028
    Abstract: Semiconductor process evaluation methods perform multiple scans of a test semiconductor substrate (e.g., test wafer) using ion beams under different ion implanting conditions. Parameters of the test semiconductor substrate that was scanned using the ion beams under different ion implanting conditions are then measured to conduct the semiconductor process evaluation.
    Type: Application
    Filed: November 28, 2006
    Publication date: July 5, 2007
    Inventors: Won-bae Jang, Seung-chul Kim, Chan-seung Choi, Min-suk Kim, Chee-wan Kim, Sun-yong Lee, Sang-rok Hah