Patents by Inventor Won Beom Choi
Won Beom Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9293181Abstract: A block selection circuit and a semiconductor device having the same may include a row decoder which includes a high voltage generating circuit configured to output a block selection voltage in response to upper addresses, switching circuits configured to receive the block selection voltage and a precharge high voltage, and forward the block selection voltage through one of the switching circuits that is selected in response to selection signals, and pass transistor groups configured to select a memory block in response to the forwarded block selection voltage.Type: GrantFiled: September 17, 2013Date of Patent: March 22, 2016Assignee: SK Hynix Inc.Inventors: Bon Kwang Koo, Won Beom Choi
-
Patent number: 9257903Abstract: A pumping circuit includes a cross-coupled charge pump circuit including first and second capacitors configured to pump an input voltage in response to a first clock signal and to an inverted first clock signal and a plurality of transistors configured to one of transfer the input voltage to the first and second capacitors and to transfer a pumping voltage to an output node, and a switching voltage supply circuit configured to supply switching voltages to gates of the plurality of transistors to enable the transfer of the input voltage and the pumping voltage.Type: GrantFiled: June 5, 2014Date of Patent: February 9, 2016Assignee: SK Hynix Inc.Inventors: Hwang Huh, Won Beom Choi
-
Patent number: 9104220Abstract: A regulator includes an input voltage adjusting unit configured to adjust a pumping voltage in response to a control signal varied depending on a target voltage and output the adjusted pumping voltage and a regulation unit configured to output the target voltage by regulating the adjusted pumping voltage. The regulator may reduce current consumption by adjusting the pumping voltage inputted according to the target voltage.Type: GrantFiled: March 18, 2013Date of Patent: August 11, 2015Assignee: SK Hynix Inc.Inventor: Won Beom Choi
-
Publication number: 20150188418Abstract: A pumping circuit includes a cross-coupled charge pump circuit including first and second capacitors configured to pump an input voltage in response to a first clock signal and to an inverted first clock signal and a plurality of transistors configured to one of transfer the input voltage to the first and second capacitors and to transfer a pumping voltage to an output node, and a switching voltage supply circuit configured to supply switching voltages to gates of the plurality of transistors to enable the transfer of the input voltage and the pumping voltage.Type: ApplicationFiled: June 5, 2014Publication date: July 2, 2015Inventors: Hwang HUH, Won Beom CHOI
-
Publication number: 20140347949Abstract: A block selection circuit and a semiconductor device having the same may include a row decoder which includes a high voltage generating circuit configured to output a block selection voltage in response to upper addresses, switching circuits configured to receive the block selection voltage and aprecharge high voltage, and forward the block selection voltage through one of the switching circuits that is selected in response to selection signals, and pass transistor groups configured to select a memory block in response to the forwarded block selection voltage.Type: ApplicationFiled: September 17, 2013Publication date: November 27, 2014Applicant: SK hynix Inc.Inventors: Bon Kwang KOO, Won Beom CHOI
-
Publication number: 20140167713Abstract: A regulator includes an input voltage adjusting unit configured to adjust a pumping voltage in response to a control signal varied depending on a target voltage and output the adjusted pumping voltage and a regulation unit configured to output the target voltage by regulating the adjusted pumping voltage. The regulator may reduce current consumption by adjusting the pumping voltage inputted according to the target voltage.Type: ApplicationFiled: March 18, 2013Publication date: June 19, 2014Applicant: SK HYNIX INC.Inventor: Won Beom CHOI
-
Patent number: 8456921Abstract: A nonvolatile memory includes a first bit line coupled to a first cell string, a second bit line coupled to a second cell string, and a bit line precharge unit configured to precharge the first bit line and the second bit line before a program operation. A bit line selected from among the first bit line and the second bit line is precharged to a lower voltage level than a target voltage level, and an unselected bit line is precharged to the target voltage level.Type: GrantFiled: July 7, 2011Date of Patent: June 4, 2013Assignee: Hynix Semiconductor Inc.Inventor: Won-Beom Choi
-
Patent number: 8339191Abstract: A reference voltage generation circuit includes a driving control unit configured to output an enable signal during a first time period in response to a power-on reset (POR) signal, a reference voltage generation unit configured to have an initial operation determined in response to the enable signal and to output a reference voltage maintained at a constant voltage level after the first time period, and a reference voltage control unit configured to fix the voltage level of the reference voltage to a first voltage upon a voltage level of the reference voltage being increased to at least a set voltage level.Type: GrantFiled: December 28, 2009Date of Patent: December 25, 2012Assignee: Hynix Semiconductor Inc.Inventor: Won Beom Choi
-
Publication number: 20120169405Abstract: An apparatus for generating an output voltage includes a boosting circuit configured to generate the output voltage by boosting an input voltage based on a boosting rate, and a pump level controller configured to control the boosting rate in response to the input voltage.Type: ApplicationFiled: July 12, 2011Publication date: July 5, 2012Inventor: Won-Beom CHOI
-
Publication number: 20120119815Abstract: A switching circuit of a semiconductor apparatus includes a first switching unit configured to substantially prevent a leakage current applied from an outside and simultaneously switch a first signal with a first high voltage bias level, and a second switching unit configured to switch a second signal with a second high voltage bias according to the first high voltage bias level. The first switching unit and the second switching unit are selectively switched by a first enable signal and a second enable signal, which are applied from an outside, to generate a global bias signal.Type: ApplicationFiled: August 25, 2011Publication date: May 17, 2012Applicant: HYNIX SEMICONDUCTOR INC.Inventor: Won Beom Choi
-
Publication number: 20120008417Abstract: A nonvolatile memory includes a first bit line coupled to a first cell string, a second bit line coupled to a second cell string, and a bit line precharge unit configured to precharge the first bit line and the second bit line before a program operation. A bit line selected from among the first bit line and the second bit line is precharged to a lower voltage level than a target voltage level, and an unselected bit line is precharged to the target voltage level.Type: ApplicationFiled: July 7, 2011Publication date: January 12, 2012Inventor: Won-Beom CHOI
-
Publication number: 20110292737Abstract: A nonvolatile memory apparatus includes: a plurality of drain selection switches coupled to a plurality of memory cell strings, respectively; and a drain selection switch controller configured to selectively drive a drain selection switch coupled to an even bit line or a drain selection switch coupled to an odd bit line, in response to a page address and a global drain selection signal.Type: ApplicationFiled: December 31, 2010Publication date: December 1, 2011Applicant: HYNIX SEMICONDUCTOR INC.Inventor: Won Beom CHOI
-
Publication number: 20100283516Abstract: A reference voltage generation circuit includes a driving control unit configured to output an enable signal during a first time period in response to a power-on reset (POR) signal, a reference voltage generation unit configured to have an initial operation determined in response to the enable signal and to output a reference voltage maintained at a constant voltage level after the first time period, and a reference voltage control unit configured to fix the voltage level of the reference voltage to a first voltage upon a voltage level of the reference voltage being increased to at least a set voltage level.Type: ApplicationFiled: December 28, 2009Publication date: November 11, 2010Inventor: Won Beom CHOI
-
Patent number: 7696795Abstract: A power-on reset circuit includes a power detector to generate a detect voltage by detecting an internal voltage. An output unit outputs a power-up reset signal using the detect voltage. A delay unit is configured to delay the power-up reset signal and generate a delay voltage. A switch device is configured to be controlled using the delay voltage. A discharge unit discharges the detect voltage in response to the internal voltage and the power-up reset signal.Type: GrantFiled: May 21, 2007Date of Patent: April 13, 2010Assignee: Hynix Semiconductor Inc.Inventor: Won Beom Choi
-
Publication number: 20080100351Abstract: A power-on reset circuit includes a power detector to generate a detect voltage by detecting an internal voltage. An output unit outputs a power-up reset signal using the detect voltage. A delay unit is configured to delay the power-up reset signal and generate a delay voltage. A switch device is configured to be controlled using the delay voltage. A discharge unit discharges the detect voltage in response to the internal voltage and the power-up reset signal.Type: ApplicationFiled: May 21, 2007Publication date: May 1, 2008Applicant: Hynix Semiconductor Inc.Inventor: Won Beom Choi