Patents by Inventor Won-Bum Lee

Won-Bum Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12635185
    Abstract: A thin film transistor substrate and a display apparatus including the same includes a substrate; an active layer and a gate electrode on the substrate, the active layer and gate electrode being spaced apart from each other vertically; a gate insulating film including a first gate insulating film and a second gate insulating film provided between the active layer and the gate electrode; and a source electrode and a drain electrode, each of the source electrode and the drain electrode connected to the active layer. The first gate insulating film is provided closer to the gate electrode than the second gate insulating film, a dielectric constant of the first gate insulating film is higher than a dielectric constant of the second gate insulating film, and a hydrogen content of the first gate insulating film is lower than a hydrogen content of the second gate insulating film.
    Type: Grant
    Filed: March 28, 2023
    Date of Patent: May 19, 2026
    Assignee: LG Display Co., Ltd.
    Inventors: JungSeok Seo, Jin Seong Park, Jaeyoon Park, Ki Lim Han, Taewon Hwang, Won-Bum Lee
  • Publication number: 20230317855
    Abstract: A thin film transistor substrate and a display apparatus including the same includes a substrate; an active layer and a gate electrode on the substrate, the active layer and gate electrode being spaced apart from each other vertically; a gate insulating film including a first gate insulating film and a second gate insulating film provided between the active layer and the gate electrode; and a source electrode and a drain electrode, each of the source electrode and the drain electrode connected to the active layer. The first gate insulating film is provided closer to the gate electrode than the second gate insulating film, a dielectric constant of the first gate insulating film is higher than a dielectric constant of the second gate insulating film, and a hydrogen content of the first gate insulating film is lower than a hydrogen content of the second gate insulating film.
    Type: Application
    Filed: March 28, 2023
    Publication date: October 5, 2023
    Applicants: LG Display Co., Ltd., Hanyang University Industry-University Cooperation Foundation
    Inventors: JungSeok SEO, Jin Seong PARK, Jaeyoon PARK, Ki Lim HAN, Taewon HWANG, Won-Bum LEE
  • Publication number: 20040070271
    Abstract: The present invention provides an apparatus and method of automatically braking a vehicle in a stop state by using a signal of a vehicle-speed sensor in a vehicle, and can be used as an alternative to a parking brake. A stop signal conversion means (20), an accelerator pedal sensing means (40), a stopping/running judgement means (50), a switch means (60) and a electromagnetically operated switching valve (70) are comprised. One of a high-level signal and a low-level signal from the vehicle-speed sensor (10) in the stop state of the vehicle by pressing the brake pedal is detected as it is, and the other one of a high-level signal and a low-level signal from the vehicle-speed sensor (10) is converted by a stop signal conversion means (20) and detecting the converted one. A brake line (L) is closed and the vehicle is braked by detecting the stop state using a single signal from the vehicle-speed sensor (10) although the pressing of the brake pedal may be released.
    Type: Application
    Filed: August 21, 2003
    Publication date: April 15, 2004
    Inventor: Won-Bum Lee