Patents by Inventor Won Cheol Seo
Won Cheol Seo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210083155Abstract: Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.Type: ApplicationFiled: November 24, 2020Publication date: March 18, 2021Inventors: Won Cheol SEO, Dae Sung CHO
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Patent number: 10892386Abstract: Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.Type: GrantFiled: September 21, 2018Date of Patent: January 12, 2021Assignee: SEOUL SEMICONDUCTOR CO., LTD.Inventors: Won Cheol Seo, Dae Sung Cho
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Patent number: 10879437Abstract: Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.Type: GrantFiled: August 10, 2018Date of Patent: December 29, 2020Assignee: SEOUL SEMICONDUCTOR CO., LTD.Inventors: Won Cheol Seo, Dae Sung Cho
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Publication number: 20190035990Abstract: Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.Type: ApplicationFiled: September 21, 2018Publication date: January 31, 2019Inventors: Won Cheol Seo, Dae Sung Cho
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Publication number: 20180351057Abstract: Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.Type: ApplicationFiled: August 10, 2018Publication date: December 6, 2018Inventors: Won Cheol Seo, Dae Sung Cho
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Patent number: 10069048Abstract: Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.Type: GrantFiled: December 22, 2016Date of Patent: September 4, 2018Assignee: Seoul Viosys Co., Ltd.Inventors: Won Cheol Seo, Dae Sung Cho
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Patent number: 9882102Abstract: A light-emitting diode including a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, wherein the second semiconductor layer and the active layer provide a contact region exposing the first semiconductor layer, a first bump arranged on a first side of the semiconductor stack and being electrically connected to the first semiconductor layer via the contact region, a second bump arranged on the first side of the semiconductor stack and being electrically connected to the second semiconductor layer, a first insulation layer disposed covering a side surface of the first bump, and a wavelength converter disposed on a second side of the semiconductor stack. The wavelength converter laterally extends beyond the semiconductor stack. The first insulation layer includes a side surface that is flush with a side surface of the wavelength converter.Type: GrantFiled: August 25, 2016Date of Patent: January 30, 2018Assignee: Seoul Semiconductor Co., Ltd.Inventors: Won Cheol Seo, Dae Sung Cho
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Patent number: 9847371Abstract: A light emitting diode (LED) chip for high voltage operation and an LED package including the same are disclosed. The LED chip includes a substrate, a first array formed on the substrate and including n light emitting cells connected in series, and a second array formed on the substrate and including m (m?n) light emitting cells connected in series. During operation of the LED chip, the first array and the second array are operated by being connected in reverse parallel to each other. Further, when a driving voltage of the first array is delined as Vd1 and a driving voltage of the second array is defined as Vd2, a difference between Vd1 and Vd2×(n/m) is not more than 2V.Type: GrantFiled: February 12, 2010Date of Patent: December 19, 2017Assignee: Seoul Semiconductor Co., Ltd.Inventors: Chung Hoon Lee, Won Cheol Seo, Yeo Jin Yoon, Jin Cheol Shin
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Patent number: 9793440Abstract: A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.Type: GrantFiled: July 1, 2016Date of Patent: October 17, 2017Assignee: Seoul Viosys Co., Ltd.Inventors: Won Cheol Seo, Dae Sung Cho, Kyung Hee Ye, Kyoung Wan Kim, Yeo Jin Yoon
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Patent number: 9728687Abstract: In one aspect a light emitting device includes a light emitting diode (LED) chip, and an encapsulant covering the LED chip. The encapsulant is embedded with a downconverter. The downconverter includes a quasi-two dimensional quantum nanoplatelet structure.Type: GrantFiled: May 12, 2016Date of Patent: August 8, 2017Assignee: Seoul Semiconductor Co., Ltd.Inventors: Nathan Stott, Won Cheol Seo, Ji Hye An
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Publication number: 20170104139Abstract: Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.Type: ApplicationFiled: December 22, 2016Publication date: April 13, 2017Inventors: Won Cheol Seo, Dae Sung Cho
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Patent number: 9543490Abstract: Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.Type: GrantFiled: February 11, 2016Date of Patent: January 10, 2017Assignee: SEOUL SEMICONDUCTOR CO., LTD.Inventors: Won Cheol Seo, Dae Sung Cho
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Publication number: 20160365382Abstract: A light-emitting diode including a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, wherein the second semiconductor layer and the active layer provide a contact region exposing the first semiconductor layer, a first bump arranged on a first side of the semiconductor stack and being electrically connected to the first semiconductor layer via the contact region, a second bump arranged on the first side of the semiconductor stack and being electrically connected to the second semiconductor layer, a first insulation layer disposed covering a side surface of the first bump, and a wavelength converter disposed on a second side of the semiconductor stack. The wavelength converter laterally extends beyond the semiconductor stack. The first insulation layer includes a side surface that is flush with a side surface of the wavelength converter.Type: ApplicationFiled: August 25, 2016Publication date: December 15, 2016Inventors: Won Cheol SEO, Dae Sung CHO
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Publication number: 20160343922Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.Type: ApplicationFiled: August 2, 2016Publication date: November 24, 2016Inventors: Won Cheol SEO, Joon Hee LEE, Jong Kyun YOU, Chang Youn KIM, Jin Cheol SHIN, Hwa Mok KIM, Jang Woo LEE, Yeo Jin YOON, Jong Kyu KIM
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Publication number: 20160336492Abstract: In one aspect a light emitting device includes a light emitting diode (LED) chip, and an encapsulant covering the LED chip. The encapsulant is embedded with a downconverter. The downconverter includes a quasi-two dimensional quantum nanoplatelet structure.Type: ApplicationFiled: May 12, 2016Publication date: November 17, 2016Inventors: Nathan Stott, Won Cheol Seo, Ji Hye An
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Publication number: 20160315226Abstract: A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.Type: ApplicationFiled: July 1, 2016Publication date: October 27, 2016Inventors: Won Cheol Seo, Dae Sung Cho, Kyung Hee Ye, Kyoung Wan Kim, Yeo Jin Yoon
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Patent number: 9431377Abstract: Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.Type: GrantFiled: December 23, 2013Date of Patent: August 30, 2016Assignee: Seoul Viosys Co., Ltd.Inventors: Won Cheol Seo, Joon Hee Lee, Jong Kyun You, Chang Youn Kim, Jin Cheol Shin, Hwa Mok Kim, Jang Woo Lee, Yeo Jin Yoon, Jong Kyu Kim
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Patent number: 9419180Abstract: A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.Type: GrantFiled: March 11, 2015Date of Patent: August 16, 2016Assignee: SEOUL VIOSYS CO., LTD.Inventors: Won Cheol Seo, Dae Sung Cho, Kyung Hee Ye, Kyoung Wan Kim, Yeo Jin Yoon
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Publication number: 20160163941Abstract: Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.Type: ApplicationFiled: February 11, 2016Publication date: June 9, 2016Inventors: Won Cheol Seo, Dae Sung Cho
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Patent number: 9349912Abstract: Exemplary embodiments of the present invention relate to a light-emitting device including a single substrate, at least two light-emitting units disposed on the single substrate, each of the at least two light-emitting units including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a first electrode connected to the first conductivity-type semiconductor layer, and a second electrode connected to the second conductivity-type semiconductor layer, wherein two light-emitting units of the at least two light-emitting units share the first conductivity-type semiconductor layer.Type: GrantFiled: March 28, 2014Date of Patent: May 24, 2016Assignee: Seoul Viosys Co., Ltd.Inventors: Kyung Hee Ye, Dae Sung Cho, Won Cheol Seo, Young Eun Yang, Sum Geun Lee