Abstract: A semiconductor device includes, first and second source/drain patterns on an active pattern and spaced apart from each other, a first source/drain contact on the first source/drain pattern and including a first source/drain barrier film and a first source/drain filling film on the first source/drain barrier film, a second source/drain contact on the second source/drain pattern, and a gate structure on the active pattern between the first and second source/drain contacts and including a gate electrode, wherein a top surface of the first source/drain contact is lower than a top surface of the gate structure, and a height from a top surface of the active pattern to a top surface of the first source/drain barrier film is less than a height from the top surface of the active pattern to a top surface of the first source/drain filling film.

Abstract: A vehicle includes: a battery; a battery thermostat; at least one sensor; and a controller configured to determine a preheating temperature of the battery based on an outside temperature of the vehicle and a first state of charge of the battery, and control the battery thermostat based on the preheating temperature, the first state of charge being identified through the at least one sensor.

Abstract: A vehicle includes: a battery; a battery thermostat; at least one sensor; and a controller configured to determine a preheating temperature of the battery based on an outside temperature of the vehicle and a first state of charge of the battery, and control the battery thermostat based on the preheating temperature, the first state of charge being identified through the at least one sensor.

Abstract: A dust suction device includes: a main body composed of a bottom plate and a footboard, wherein a dust suction part is formed in the bottom plate, and the footboard seals the dust suction part and has suction holes formed on the upper part thereof to allow the dust to be sucked to the dust suction part; a number of springs provided on the bottom inside the bottom plate matching the number of suction holes; balls which are provided on the upper part of the springs and which are in close contact with the suction holes of the footboard and open and close the suction holes; and a suction part which is connected to a side portion of the main body through a hose and sucks the dust through the suction holes toward the dust suction part when the suction holes are open.

Abstract: Presented herein is a memory device and a method of operating the memory device. The memory device may include a memory cell, and a page buffer coupled to the memory cell via a bit line and configured to perform a read operation on the memory cell. The page buffer may include a storage unit configured to control a bit line precharge operation during the read operation and to store a result value of a first sensing operation. After the bit line precharge operation, a value stored in the storage unit is inverted before the storage unit stores the result value of the first sensing operation.

Abstract: Presented herein is a memory device and a method of operating the memory device. The memory device may include a memory cell, and a page buffer coupled to the memory cell via a bit line and configured to perform a read operation on the memory cell. The page buffer may include a storage unit configured to control a bit line precharge operation during the read operation and to store a result value of a first sensing operation. After the bit line precharge operation, a value stored in the storage unit is inverted before the storage unit stores the result value of the first sensing operation.

Abstract: Presented herein is a memory device and a method of operating the memory device. The memory device may include a memory cell, and a page buffer coupled to the memory cell via a bit line and configured to perform a read operation on the memory cell. The page buffer may include a storage unit configured to control a bit line precharge operation during the read operation and to store a result value of a first sensing operation. After the bit line precharge operation, a value stored in the storage unit is inverted before the storage unit stores the result value of the first sensing operation.

Abstract: Presented herein is a memory device and a method of operating the memory device. The memory device may include a memory cell, and a page buffer coupled to the memory cell via a bit line and configured to perform a read operation on the memory cell. The page buffer may include a storage unit configured to control a bit line precharge operation during the read operation and to store a result value of a first sensing operation. After the bit line precharge operation, a value stored in the storage unit is inverted before the storage unit stores the result value of the first sensing operation.

Abstract: A dust suction device includes: a main body composed of a bottom plate and a footboard, wherein a dust suction part is formed in the bottom plate, and the footboard seals the dust suction part and has suction holes formed on the upper part thereof to allow the dust to be sucked to the dust suction part; a number of springs provided on the bottom inside the bottom plate matching the number of suction holes; balls which are provided on the upper part of the springs and which are in close contact with the suction holes of the footboard and open and close the suction holes; and a suction part which is connected to a side portion of the main body through a hose and sucks the dust through the suction holes toward the dust suction part when the suction holes are open.

Abstract: A memory device includes a plurality of memory cells, bit lines connected to the plurality of memory cells, and page buffers coupled to the plurality of memory cells through the bit lines, and performing a read operation on the plurality of memory cells, wherein each of the page buffers comprises: a first latch controlling a bit line precharge operation during the read operation; and a second latch storing a result of a first sensing operation and a result of a second sensing operation performed after the first sensing operation, wherein a value stored in the second latch is inverted when the result of the first sensing operation and the result of second sensing operation are different from each other during the second sensing operation.

Abstract: Presented herein is a memory device and a method of operating the memory device. The memory device may include a memory cell, and a page buffer coupled to the memory cell via a bit line and configured to perform a read operation on the memory cell. The page buffer may include a storage unit configured to control a bit line precharge operation during the read operation and to store a result value of a first sensing operation. After the bit line precharge operation, a value stored in the storage unit is inverted before the storage unit stores the result value of the first sensing operation.

Abstract: A memory device includes a plurality of memory cells, bit lines connected to the plurality of memory cells, and page buffers coupled to the plurality of memory cells through the bit lines, and performing a read operation on the plurality of memory cells, wherein each of the page buffers comprises: a first latch controlling a bit line precharge operation during the read operation; and a second latch storing a result of a first sensing operation and a result of a second sensing operation performed after the first sensing operation, wherein a value stored in the second latch is inverted when the result of the first sensing operation and the result of second sensing operation are different from each other during the second sensing operation.