Abstract: A method for dicing a substrate includes setting a target height for forming a first reforming region inside a target substrate, the target height being a distance from an upper surface of the target substrate to the first reforming region; irradiating a laser beam to a first sample substrate including a first film and a second film being in contact with the first film, and setting a target condition on the basis of a sample condition that results in forming a condensing point of the laser beam on an upper surface of the first film being in contact with the second film; and irradiating the target substrate with the laser beam according to the target condition to form the first reforming region inside the target substrate, wherein a thickness of the second film is the target height.

Abstract: In a method of testing an interconnection substrate, a blocking condition of a reference light reflected from a probe having an intrinsic optical characteristic may be set. An electric field emitted from a test interconnection substrate having a plurality of circuits may change the intrinsic optical characteristics of the probe into test optical characteristics. Light may be irradiated to the probe having the test optical characteristics. The reference light reflected from the probe having the test optical characteristic may be blocked in accordance with the blocking condition. The remaining reflected light that may be due to an abnormal circuit may be detected.

Abstract: A plasma monitoring system includes a plasma chamber performing plasma processes, first and second plasma sensing devices, and a controller. The first and second plasma sensing devices are respectively in a first horizontal direction and a second horizontal direction perpendicular to each other from a center point of a monitoring plasma plane in the plasma chamber. The first and second plasma sensing device generate first and second detection signals with respect to the monitoring plasma plane based on a first incident beam radiated from the monitoring plasma plane in the first horizontal direction and a second incident beam radiated from the monitoring plasma plane in the second horizontal direction. The controller detects two-dimensional plasma distribution information with respect to the monitoring plasma plane by performing a convolution operation based on the first and second detection signals, and controls the plasma processes based on the two-dimensional plasma distribution information.

Abstract: In a method of detecting a defect on a substrate, an incident beam may be radiated to a surface of the substrate to generate reflected light beams. A second harmonic generation (SHG) beam among the reflected light beams may be detected. The SHG beam may be generated by a defect on the substrate. A nano size defect may be detected by examining the SHG beam.

Abstract: A maskless exposure method includes spatially modulating a light output from a light source into a pattern beam having a mask pattern, condensing the modulated pattern beam into a first group of spot beams having a first focal position on a Z-axis substantially perpendicular to an exposure surface of an object layer, and into a second group of spot beams having a second focal position different from the first focal position, and scanning the object layer with the first and second groups of spot beams. The object layer has a first height and a second height different from the first height.

Abstract: In a method of testing an interconnection substrate, a blocking condition of a reference light reflected from a probe having an intrinsic optical characteristic may be set. An electric field emitted from a test interconnection substrate having a plurality of circuits may change the intrinsic optical characteristics of the probe into test optical characteristics. Light may be irradiated to the probe having the test optical characteristics. The reference light reflected from the probe having the test optical characteristic may be blocked in accordance with the blocking condition. The remaining reflected light that may be due to an abnormal circuit may be detected.

Abstract: An optical rearrangement device includes an optical block having a substantially hexahedral shape. The optical block includes a front face, a top face, a first side face, a bottom face, a second side face, and a back face. The top face is parallel with the bottom face. The optical block is arranged such that when an input beam is incident through the front face at a right angle thereto, the input beam is totally reflected at each of the top face, the bottom face, the first side face, and the second side face and an output beam is output through the front face or the back face at a right angle thereto.

Abstract: In a method of detecting a defect on a substrate, an incident beam may be radiated to a surface of the substrate to generate reflected light beams. A second harmonic generation (SHG) beam among the reflected light beams may be detected. The SHG beam may be generated by a defect on the substrate. A nano size defect may be detected by examining the SHG beam.

Abstract: A plasma monitoring system includes a plasma chamber performing plasma processes, first and second plasma sensing devices, and a controller. The first and second plasma sensing devices are respectively in a first horizontal direction and a second horizontal direction perpendicular to each other from a center point of a monitoring plasma plane in the plasma chamber. The first and second plasma sensing device generate first and second detection signals with respect to the monitoring plasma plane based on a first incident beam radiated from the monitoring plasma plane in the first horizontal direction and a second incident beam radiated from the monitoring plasma plane in the second horizontal direction. The controller detects two-dimensional plasma distribution information with respect to the monitoring plasma plane by performing a convolution operation based on the first and second detection signals, and controls the plasma processes based on the two-dimensional plasma distribution information.

Abstract: A maskless exposure method includes spatially modulating a light output from a light source into a pattern beam having a mask pattern, condensing the modulated pattern beam into a first group of spot beams having a first focal position on a Z-axis substantially perpendicular to an exposure surface of an object layer, and into a second group of spot beams having a second focal position different from the first focal position, and scanning the object layer with the first and second groups of spot beams. The object layer has a first height and a second height different from the first height.

Abstract: Provided are a defect inspection system and a method of inspecting a defect, by which a defect in an inspection target may be precisely detected at a high speed. The defect inspection system includes a light source, a linear polarizer to linearly polarize light from the light source, a compensator to circularly or elliptically polarize light from the linear polarizer, a stage on which an inspection target is located, a polarization analyzer to selectively transmit light reflected by the inspection target, and a first camera to collect light from the polarization analyzer. Light transmitted through the compensator is obliquely incident to the inspection target, and reference light, which corresponds to light reflected in a defectless state, from among the light reflected by the inspection target, is blocked by the polarization analyzer.

Abstract: Maskless lithographic apparatus measuring accumulated amount of light is provided. The maskless lithographic apparatus includes a light source which emits light, a stage on which a substrate is disposed, an optical system which converts the light into a beam spot array including a plurality of columns and a plurality of rows and irradiates the beam spot array onto the stage, a slit to which the beam spot array is irradiated and which passes an nth (n is a natural number) row of the beam spot array, an optical sensor which senses the nth row of the beam spot array which has passed through the slit, and a measuring unit which measures an accumulated amount of light in the nth row of the beam spot array sensed by the optical sensor.

Abstract: A plasma light source apparatus includes a first laser generator configured to generate a first laser. A second laser generator is configured to generate a second laser. A chamber is configured to accommodate and seal a medium material for plasma ignition and to allow plasma to be ignited by the first laser and to be maintained by the second laser. An inner surface of the chamber includes two curved mirrors that face each other.

Abstract: Maskless lithographic apparatus measuring accumulated amount of light is provided.

Abstract: A plasma light source apparatus includes a first laser generator configured to generate a first laser. A second laser generator is configured to generate a second laser. A chamber is configured to accommodate and seal a medium material for plasma ignition and to allow plasma to be ignited by the first laser and to be maintained by the second laser. An inner surface of the chamber includes two curved mirrors that face each other.

Abstract: Provided are a light source device and a semiconductor manufacturing apparatus including the same. The light source device includes a light-emitting lamp. The light source device includes a laser generator configured to generate and direct a laser beam to the light-emitting lamp. The light source device includes a recycling optical element configured to redirect the laser beam to the light-emitting lamp. The recycling optical element includes a first recycling optical modulator configured to change the phase of the laser beam.

Abstract: An illumination optic system includes a convex mirror to reflect light from a light source to towards a lens. The light source is at a first focus position and the lens is at a second focus position of the mirror. The system also includes a reflector to reflect light not incident on the lens toward the convex mirror. The reflector has a light guide hole to guide light to the incidence surface of the lens.

Abstract: A broadband light illuminator of an optical inspector for optically detecting defects of an inspection object may include an electrode-less chamber including a plasma area from which broadband light is generated; a first energy provider, exterior to the chamber, configured to provide first energy for ionizing high pressure gases to form ionized gases in the chamber; a second energy provider, exterior to the chamber, configured to provide second energy for transforming the ionized gases into a plasma state to form the plasma area at a central portion of the chamber; an elliptical reflector having a first focus at which the chamber is positioned and a second focus such that the broadband light is reflected from the elliptical reflector toward the second focus; and a lens unit focusing the reflected broadband light onto the inspection object to form an inspection light for detecting the defects of the inspection object.

Abstract: Provided are a light source device and a semiconductor manufacturing apparatus including the same. The light source device includes a light-emitting lamp. The light source device includes a laser generator configured to generate and direct a laser beam to the light-emitting lamp. The light source device includes a recycling optical element configured to redirect the laser beam to the light-emitting lamp. The recycling optical element includes a first recycling optical modulator configured to change the phase of the laser beam.