Patents by Inventor Won G. Lee

Won G. Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12002145
    Abstract: Apparatus and method for efficient graphics processing including ray tracing. For example, one embodiment of a graphics processor comprises: execution hardware logic to execute graphics commands and render images; an interface to couple functional units of the execution hardware logic to a tiled resource; and a tiled resource manager to manage access by the functional units to the tiled resource, a functional unit of the execution hardware logic to generate a request with a hash identifier (ID) to request access to a portion of the tiled resource, wherein the tiled resource manager is to determine whether a portion of the tiled resource identified by the hash ID exists, and if not, to allocate a new portion of the tiled resource and associate the new portion with the hash ID.
    Type: Grant
    Filed: December 23, 2020
    Date of Patent: June 4, 2024
    Assignee: Intel Corporation
    Inventors: Sven Woop, Michael J. Doyle, Sreenivas Kothandaraman, Karthik Vaidyanathan, Abhishek R. Appu, Carsten Benthin, Prasoonkumar Surti, Holger Gruen, Stephen Junkins, Adam Lake, Bret G. Alfieri, Gabor Liktor, Joshua Barczak, Won-Jong Lee
  • Patent number: 5063176
    Abstract: A method of forming a contact hole in a semiconductor device while maintaining intended electrical isolation of electrical conductive material layers, even in the presence of mask misalignment/excessive etching which may occur during the fabrication process of the contact hole and the resulting device are disclosed. The method comprises the formation of an etch barrier layer to provide an isotropic etching barrier and an electrically insulating layer for the conductive material layers which are positioned proximate the contact hole. Thus, when the contact hole is formed by anisotropically etching to expose the surface of the diffusion region an electrical short cannot occur between conductive material layers proximate the contact hole and conductive material which is deposited into the contact hole.
    Type: Grant
    Filed: May 30, 1990
    Date of Patent: November 5, 1991
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Won G. Lee, Mi Y. Kang