Abstract: A semiconductor package may include a package substrate, a support structure on the package substrate and having a cavity therein, and at least one first semiconductor chip on the package substrate in the cavity. The support structure may have a first inner sidewall facing the cavity, a first top surface, and a first inclined surface connecting the first inner sidewall and the first top surface. The first inclined surface may be inclined with respect to a top surface of the at least one first semiconductor chip.

Abstract: A semiconductor package may include a package substrate, a support structure on the package substrate and having a cavity therein, and at least one first semiconductor chip on the package substrate in the cavity. The support structure may have a first inner sidewall facing the cavity, a first top surface, and a first inclined surface connecting the first inner sidewall and the first top surface. The first inclined surface may be inclined with respect to a top surface of the at least one first semiconductor chip.

Abstract: A method for manufacturing a semiconductor device includes stacking, on a package substrate, first semiconductor chips. Each of the first semiconductor chips includes a first adhesive film. The method includes stacking, respectively on the first semiconductor chips, second semiconductor chips. Each of the second semiconductor chips includes a second adhesive film. The method includes compressing the first and second adhesive films to form an adhesive structure. The adhesive structure includes an extension disposed on sidewalls of the first and second semiconductor chips. The method includes removing the extension. The method includes forming a first molding layer substantially covering the first and second semiconductor chips. The method includes performing a cutting process on the package substrate between the first and second semiconductor chips to form a plurality of semiconductor packages each including at least one of the first semiconductor chips and at least one of the second semiconductor chips.

Abstract: A method for manufacturing a semiconductor device includes stacking, on a package substrate, first semiconductor chips. Each of the first semiconductor chips includes a first adhesive film. The method includes stacking, respectively on the first semiconductor chips, second semiconductor chips. Each of the second semiconductor chips includes a second adhesive film. The method includes compressing the first and second adhesive films to form an adhesive structure. The adhesive structure includes an extension disposed on sidewalls of the first and second semiconductor chips. The method includes removing the extension. The method includes forming a first molding layer substantially covering the first and second semiconductor chips. The method includes performing a cutting process on the package substrate between the first and second semiconductor chips to form a plurality of semiconductor packages each including at least one of the first semiconductor chips and at least one of the second semiconductor chips.

Abstract: A method for manufacturing a semiconductor device includes stacking, on a package substrate, first semiconductor chips. Each of the first semiconductor chips includes a first adhesive film. The method includes stacking, respectively on the first semiconductor chips, second semiconductor chips. Each of the second semiconductor chips includes a second adhesive film. The method includes compressing the first and second adhesive films to form an adhesive structure. The adhesive structure includes an extension disposed on sidewalls of the first and second semiconductor chips. The method includes removing the extension. The method includes forming a first molding layer substantially covering the first and second semiconductor chips. The method includes performing a cutting process on the package substrate between the first and second semiconductor chips to form a plurality of semiconductor packages each including at least one of the first semiconductor chips and at least one of the second semiconductor chips.

Abstract: The present disclosure relates to a method of fabricating a semiconductor package. The method may include forming a cavity in a package substrate and providing the package substrate and a die on a carrier tape film. Here, the carrier tape film may include a tape substrate and an insulating layer on the tape substrate, and the die may be provided in the cavity of the package substrate. The method may further include subsequently forming an encapsulation layer to cover the insulating layer and the die in the cavity and cover the package substrate on the insulating layer and removing the tape substrate from the insulating layer.

Abstract: A method for manufacturing a semiconductor device includes stacking, on a package substrate, first semiconductor chips. Each of the first semiconductor chips includes a first adhesive film. The method includes stacking, respectively on the first semiconductor chips, second semiconductor chips. Each of the second semiconductor chips includes a second adhesive film. The method includes compressing the first and second adhesive films to form an adhesive structure. The adhesive structure includes an extension disposed on sidewalls of the first and second semiconductor chips. The method includes removing the extension. The method includes forming a first molding layer substantially covering the first and second semiconductor chips. The method includes performing a cutting process on the package substrate between the first and second semiconductor chips to form a plurality of semiconductor packages each including at least one of the first semiconductor chips and at least one of the second semiconductor chips.

Abstract: Provided are a semiconductor package. The semiconductor package comprises a redistribution substrate, an interconnect substrate on the redistribution substrate and including a hole penetrating therethrough and a recess region in a lower portion thereof, a semiconductor chip on the redistribution substrate and disposed in the hole of the interconnect substrate, and a molding layer covering the semiconductor chip and the interconnect substrate. The recess region is connected to the hole. The mold layer fills the recess region and a gap between the semiconductor chip and the interconnect substrate.

Abstract: The present disclosure relates to a method of fabricating a semiconductor package. The method may include forming a cavity in a package substrate and providing the package substrate and a die on a carrier tape film. Here, the carrier tape film may include a tape substrate and an insulating layer on the tape substrate, and the die may be provided in the cavity of the package substrate. The method may further include subsequently forming an encapsulation layer to cover the insulating layer and the die in the cavity and cover the package substrate on the insulating layer and removing the tape substrate from the insulating layer.

Abstract: A semiconductor package may include a package substrate having a first surface and a boundary that may be defined by edges of the package substrate. The package further includes a first semiconductor chip having a front surface and a back surface. The back surface of a first portion of the first semiconductor chip may be disposed on the first surface of the package substrate with the back surface of a second portion of the first semiconductor chip extending beyond of the defined boundary of the package substrate. The semiconductor package may also include a second semiconductor chip disposed on the back surface of the second portion of the first semiconductor chip that extends beyond the defined boundary of the package substrate.

Abstract: A semiconductor package may include a package substrate having a first surface and a boundary that may be defined by edges of the package substrate. The package further includes a first semiconductor chip having a front surface and a back surface. The back surface of a first portion of the first semiconductor chip may be disposed on the first surface of the package substrate with the back surface of a second portion of the first semiconductor chip extending beyond of the defined boundary of the package substrate. The semiconductor package may also include a second semiconductor chip disposed on the back surface of the second portion of the first semiconductor chip that extends beyond the defined boundary of the package substrate.