Abstract: A radio-frequency device includes a radio-frequency module. The radio-frequency module includes a first substrate, a second substrate, a radio-frequency integrated circuit (RFIC), a front-end integrated circuit (FEIC), and a flexible substrate. The RFIC has at least a portion surrounded by a first core member and is configured to input or output a base signal and a first radio-frequency (RF) signal having a frequency higher than a frequency of the base signal. The FEIC has at least a portion surrounded by a second core member and is configured to input or output the first RF signal and a second RF signal having a power different from a power of the first RF signal. The flexible substrate is configured to connect the first and second substrates to each other, provide a transmission path for the first RF signal, and being more flexible than the first and second substrates.

Abstract: A radio frequency module includes a radio frequency integrated circuit (RFIC) to input or output a base signal and a radio frequency (RF) signal having a higher frequency than the base signal, a wiring via extending upward from the RFIC and a feed line electrically connected to the wiring via to provide a transmission path of the RF signal, a second ground layer surrounding the feed line, a first ground layer spaced above the second ground layer, a third ground layer between the second ground layer and the RFIC, a feed-line insulating layer disposed between the first and third ground layers, an IC wiring layer between the third ground layer and the RFIC, electrically connected to the RFIC, and providing a transmission path of the base signal, and an IC insulating layer between the third ground layer and the RFIC, having a higher dielectric constant than the feed-line insulating layer.

Abstract: A radio-frequency device includes a radio-frequency module. The radio-frequency module includes a first substrate, a second substrate, a radio-frequency integrated circuit (RFIC), a front-end integrated circuit (FEIC), and a flexible substrate. The RFIC has at least a portion surrounded by a first core member and is configured to input or output a base signal and a first radio-frequency (RF) signal having a frequency higher than a frequency of the base signal. The FEIC has at least a portion surrounded by a second core member and is configured to input or output the first RF signal and a second RF signal having a power different from a power of the first RF signal. The flexible substrate is configured to connect the first and second substrates to each other, provide a transmission path for the first RF signal, and being more flexible than the first and second substrates.

Abstract: A semiconductor device includes a stack structure including conductive layers and insulating layers that are alternately stacked with each other, a first channel layer passing through the stack structure and including a metal oxide-based semiconductor, and a second channel layer adjacent to the first channel layer and including the metal oxide-based semiconductor, wherein the first channel layer has a higher oxygen content than the second channel layer and has a different thickness from the second channel layer.

Abstract: A radio-frequency device includes a radio-frequency module. The radio-frequency module includes a first substrate, a second substrate, a radio-frequency integrated circuit (RFIC), a front-end integrated circuit (FEIC), and a flexible substrate. The RFIC has at least a portion surrounded by a first core member and is configured to input or output a base signal and a first radio-frequency (RF) signal having a frequency higher than a frequency of the base signal. The FEIC has at least a portion surrounded by a second core member and is configured to input or output the first RF signal and a second RF signal having a power different from a power of the first RF signal. The flexible substrate is configured to connect the first and second substrates to each other, provide a transmission path for the first RF signal, and being more flexible than the first and second substrates.

Abstract: A radio frequency module includes a radio frequency integrated circuit (RFIC) to input or output a base signal and a radio frequency (RF) signal having a higher frequency than the base signal, a wiring via extending upward from the RFIC and a feed line electrically connected to the wiring via to provide a transmission path of the RF signal, a second ground layer surrounding the feed line, a first ground layer spaced above the second ground layer, a third ground layer between the second ground layer and the RFIC, a feed-line insulating layer disposed between the first and third ground layers, an IC wiring layer between the third ground layer and the RFIC, electrically connected to the RFIC, and providing a transmission path of the base signal, and an IC insulating layer between the third ground layer and the RFIC, having a higher dielectric constant than the feed-line insulating layer.

Abstract: A radio-frequency device includes a radio-frequency module. The radio-frequency module includes a first substrate, a second substrate, a radio-frequency integrated circuit (RFIC), a front-end integrated circuit (FEIC), and a flexible substrate. The RFIC has at least a portion surrounded by a first core member and is configured to input or output a base signal and a first radio-frequency (RF) signal having a frequency higher than a frequency of the base signal. The FEIC has at least a portion surrounded by a second core member and is configured to input or output the first RF signal and a second RF signal having a power different from a power of the first RF signal. The flexible substrate is configured to connect the first and second substrates to each other, provide a transmission path for the first RF signal, and being more flexible than the first and second substrates.

Abstract: A semiconductor device includes a stack structure including conductive layers and insulating layers that are alternately stacked with each other, a first channel layer passing through the stack structure and including a metal oxide-based semiconductor, and a second channel layer adjacent to the first channel layer and including the metal oxide-based semiconductor, wherein the first channel layer has a higher oxygen content than the second channel layer and has a different thickness from the second channel layer.

Abstract: An electronic device and rigid-flexible substrate module includes a rigid-flexible substrate having a first region and a second region more flexible than the first region and having a first laterally extended region extending in a first lateral direction further than the first region, an integrated circuit (IC) disposed in a position lower than a position of the first region of the rigid-flexible substrate, a signal line electrically connected to the IC and extending to a lateral end of the second region of the rigid-flexible substrate, and a first heat dissipation ground layer including a first portion that overlaps the first region when viewed in a vertical direction, and a second portion different from the portion that overlaps the first laterally extended region when viewed in a vertical direction.

Abstract: A printed circuit board includes a board portion and an electronic element. The board portion includes a first substrate having an element accommodating portion and second substrates laminated on outer surfaces of the first substrate. The electronic element is disposed in the element accommodating part. The electronic element includes a heat generating element and a heat radiating member coupled to an inactive surface of the heat generating element.

Abstract: An electronic device and rigid-flexible substrate module includes a rigid-flexible substrate having a first region and a second region more flexible than the first region and having a first laterally extended region extending in a first lateral direction further than the first region, an integrated circuit (IC) disposed in a position lower than a position of the first region of the rigid-flexible substrate, a signal line electrically connected to the IC and extending to a lateral end of the second region of the rigid-flexible substrate, and a first heat dissipation ground layer including a first portion that overlaps the first region when viewed in a vertical direction, and a second portion different from the portion that overlaps the first laterally extended region when viewed in a vertical direction.

Abstract: A fan-out semiconductor package includes a first connection member having a through-hole, a semiconductor chip with connection pads on its active surface disposed in the through-hole and a first encapsulant encapsulating at least portions of the first connection member and the semiconductor chip. A second connection member is disposed below the first connection member and the semiconductor chip. A first heat dissipation member is formed in the first connection member. A component package is disposed on the fan-out semiconductor package and includes a wiring substrate connected to the first connection member through connection terminals, electronic components disposed on the wiring substrate, a second encapsulant encapsulating at least portions of the electronic components, and a second heat dissipation member formed in the wiring substrate. At least one of the electronic components is connected to the first heat dissipation member through the second heat dissipation member.

Abstract: A semiconductor package includes a device embedded portion including a first substrate having a first device embedded therein and a second substrate disposed on the first substrate, a device mounting portion comprising a second device disposed on the device embedded portion, and a sealing portion for sealing the second device, and a second module mounted on a surface of the device embedded portion that is opposite of a surface on which the device mounting portion is disposed.

Abstract: A fan-out semiconductor package includes a first connection member having a through-hole, a semiconductor chip with connection pads on its active surface disposed in the through-hole and a first encapsulant encapsulating at least portions of the first connection member and the semiconductor chip. A second connection member is disposed below the first connection member and the semiconductor chip. A first heat dissipation member is formed in the first connection member. A component package is disposed on the fan-out semiconductor package and includes a wiring substrate connected to the first connection member through connection terminals, electronic components disposed on the wiring substrate, a second encapsulant encapsulating at least portions of the electronic components, and a second heat dissipation member formed in the wiring substrate. At least one of the electronic components is connected to the first heat dissipation member through the second heat dissipation member.

Abstract: Disclosed are an oxide thin film transistor and a method of fabricating the same. The oxide thin film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor layer as a semiconductor active layer, and source and drain electrodes formed on the oxide semiconductor layer. The oxide semiconductor layer is activated by heat of less than 300° C. and a change in the magnetic flux of an applied magnetic field. More specifically, the activation proceeds by activation energy provided by Joule heat generated from eddy current occurring in the oxide semiconductor layer by a change in the magnetic flux, and the heat of less than 300° C.

Abstract: A fan-out semiconductor package includes a first connection member having a through-hole, a semiconductor chip with connection pads on its active surface disposed in the through-hole and a first encapsulant encapsulating at least portions of the first connection member and the semiconductor chip. A second connection member is disposed below the first connection member and the semiconductor chip. A first heat dissipation member is formed in the first connection member. A component package is disposed on the fan-out semiconductor package and includes a wiring substrate connected to the first connection member through connection terminals, electronic components disposed on the wiring substrate, a second encapsulant encapsulating at least portions of the electronic components, and a second heat dissipation member formed in the wiring substrate. At least one of the electronic components is connected to the first heat dissipation member through the second heat dissipation member.

Abstract: A printed circuit board includes a board portion and an electronic element. The board portion includes a first substrate having an element accommodating portion and second substrates laminated on outer surfaces of the first substrate. The electronic element is disposed in the element accommodating part. The electronic element includes a heat generating element and a heat radiating member coupled to an inactive surface of the heat generating element.

Abstract: The present invention relates to a cathode active material for a lithium secondary battery comprising: a core including a compound represented by chemical formula 1, and a shell including a compound represented by chemical formula 2, wherein the material composition of the core and the material composition of the shell are different; and a lithium secondary battery including the cathode active material for a lithium secondary battery.

Abstract: Disclosed are an oxide thin film transistor and a method of fabricating the same. The oxide thin film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor layer as a semiconductor active layer, and source and drain electrodes formed on the oxide semiconductor layer. The oxide semiconductor layer is activated by heat of less than 300° C. and a change in the magnetic flux of an applied magnetic field. More specifically, the activation proceeds by activation energy provided by Joule heat generated from eddy current occurring in the oxide semiconductor layer by a change in the magnetic flux, and the heat of less than 300° C.

Abstract: A coil component includes: a coil including connection pads; a first bonding wire connected to a first connection pad among the connection pads; and a second bonding wire connected to a second connection pad among the connection pads.