Patents by Inventor Won-Gi Kim

Won-Gi Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10008589
    Abstract: Disclosed are an oxide thin film transistor and a method of fabricating the same. The oxide thin film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor layer as a semiconductor active layer, and source and drain electrodes formed on the oxide semiconductor layer. The oxide semiconductor layer is activated by heat of less than 300° C. and a change in the magnetic flux of an applied magnetic field. More specifically, the activation proceeds by activation energy provided by Joule heat generated from eddy current occurring in the oxide semiconductor layer by a change in the magnetic flux, and the heat of less than 300° C.
    Type: Grant
    Filed: January 25, 2017
    Date of Patent: June 26, 2018
    Assignee: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Hyun Jae Kim, Jeong Woo Park, Young Jun Tak, Tae Soo Jung, Heesoo Lee, Won-Gi Kim, Jusung Chung
  • Patent number: 9728783
    Abstract: The present invention relates to a cathode active material for a lithium secondary battery comprising: a core including a compound represented by chemical formula 1, and a shell including a compound represented by chemical formula 2, wherein the material composition of the core and the material composition of the shell are different; and a lithium secondary battery including the cathode active material for a lithium secondary battery.
    Type: Grant
    Filed: November 17, 2011
    Date of Patent: August 8, 2017
    Assignee: INDUSTRY-UNIVERSITY COOPERATION FONDATION HANYANG UNIVERSITY
    Inventors: Yang-Kook Sun, Won-Gi Kim, Seung-Min Oh
  • Publication number: 20170222027
    Abstract: Disclosed are an oxide thin film transistor and a method of fabricating the same. The oxide thin film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate, a gate insulating layer formed on the gate electrode, an oxide semiconductor layer as a semiconductor active layer, and source and drain electrodes formed on the oxide semiconductor layer. The oxide semiconductor layer is activated by heat of less than 300° C. and a change in the magnetic flux of an applied magnetic field. More specifically, the activation proceeds by activation energy provided by Joule heat generated from eddy current occurring in the oxide semiconductor layer by a change in the magnetic flux, and the heat of less than 300° C.
    Type: Application
    Filed: January 25, 2017
    Publication date: August 3, 2017
    Applicant: INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
    Inventors: Hyun Jae KIM, Jeong Woo PARK, Young Jun TAK, Tae Soo JUNG, Heesoo LEE, Won-Gi KIM, Jusung CHUNG
  • Publication number: 20130337327
    Abstract: The present invention relates to a cathode active material for a lithium secondary battery comprising: a core including a compound represented by chemical formula 1, and a shell including a compound represented by chemical formula 2, wherein the material composition of the core and the material composition of the shell are different; and a lithium secondary battery including the cathode active material for a lithium secondary battery.
    Type: Application
    Filed: November 17, 2011
    Publication date: December 19, 2013
    Applicant: INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY
    Inventors: Yang-Kook Sun, Won-Gi Kim, Seung-Min Oh