Abstract: Provided is a synaptic array structure. The synaptic array structure includes: an isolation insulating layer positioned in a predetermined area on a semiconductor substrate to isolate devices; TFT-type synaptic devices arranged in an array on an isolation insulating layer; and CMOS peripheral circuits provided on the semiconductor substrate. The TFT-type synaptic device includes: a source and a drain positioned on the isolation insulating layer; a semiconductor body positioned between the source and the drain; oxide layers positioned between the semiconductor body and the source/drain; a semiconductor layer for channel; a TFT gate insulating layer; and a TFT gate electrode. The present invention, based on CMOS integration technology, processes TFT-type synaptic devices and CMOS peripheral circuits together, thereby reducing the number of masks and fabrication steps used during the fabricating process.

Abstract: Disclosed is a mobile type electron accelerator which enables a high voltage generator and a beam extraction device irradiating electron beams, and a reactor to be safely placed in containers mounted on trailers of a vehicle having mobility so as to allow a sample (for example, waste water, waste gas, and a sample to be investigated) to be tested in real time while maximally suppressing danger of environmental pollution or radiation exposure, thereby assuring rapidity, field applicability, and accuracy.

Abstract: Provided is a system for providing mobile telecommunication services using an Internet network built with a UTP cable. The system includes a main unit and a plurality of sub units. The main unit includes a plurality of input ports respectively connected to corresponding distributing ports of the switching hubs through UTP cables, is connected to an external mobile telecommunication base station through a wireless link, combines Internet signals transmitted from the distributing ports of the switching hubs with mobile telecommunication signals transmitted from the mobile telecommunication state through a wireless link. Each sub unit includes an input port connected to corresponding one of the output ports of the main unit through an UTP cable, separates the combined signal from the output port of the main unit into an Internet signal and a mobile telecommunication signal.

Abstract: Disclosed is a mobile type electron accelerator which enables a high voltage generator and a beam extraction device irradiating electron beams, and a reactor to be safely placed in containers mounted on trailers of a vehicle having mobility so as to allow a sample (for example, waste water, waste gas, and a sample to be investigated) to be tested in real time while maximally suppressing danger of environmental pollution or radiation exposure, thereby assuring rapidity, field applicability, and accuracy.

Abstract: Provided is a system for providing mobile telecommunication services using an Internet network built with a UTP cable. The system includes a main unit and a plurality of sub units. The main unit includes a plurality of input ports respectively connected to corresponding distributing ports of the switching hubs through UTP cables, is connected to an external mobile telecommunication base station through a wireless link, combines Internet signals transmitted from the distributing ports of the switching hubs with mobile telecommunication signals transmitted from the mobile telecommunication state through a wireless link. Each sub unit includes an input port connected to corresponding one of the output ports of the main unit through an UTP cable, separates the combined signal from the output port of the main unit into an Internet signal and a mobile telecommunication signal.

Abstract: As described above, the present invention relates to a vaporizer integral with a diaphragm, the vaporizer comprising: a liquid source supplying part 10; a vaporizing part 30; a recess 16; a O-ring 17; said liquid source supplying part including a source intaking passage 11 for receiving a liquid source, an intaking tube 12 communicated with the source intaking passage 11 and having a fine hole 12a formed thereon, a stopper 13 formed on a place at which the source intaking passage 11 and the intaking tube 12 are joined together, an adjusting pin 14 for controlling supplying of the liquid source from the source intaking passage 11 to the intaking tube 12, and a diaphragm 15 integral with the adjusting pin 14; said vaporizing part 30 including a first heater 31 attached to a body of the vaporizing part 30 to heat the vaporizing part, a vaporizing chamber 35 for vaporizing the liquid source, a gas transporting passage 37 for supplying a transporting gas, and a discharging port 38 for communicating with the vapori

Abstract: A noble method of forming thin films for producing semiconductor or flat panel display devices is disclosed. The method is a way of effectively forming thin films on a substrate even if reactants do not react readily in a time-divisional process gas supply sequence in a reactor by supplying reactant gases and a purge gas cyclically and sequentially in order to prevent gas-phase reactions between the reactant gases and also by generating plasma directly on a substrate synchronously with the process gas supply cycle. The method has advantages of effective thin film formation even if the reactant gases do not react readily, minimization of the purge gas supply time for reduction in process time, reduction of particle contamination during film formation process, as well as thin film formation at low temperatures.

Abstract: The present invention relates to a tape attaching device used in attaching a tape to a car door sash, instead of painting. Tape attaching device comprises a drum block 2 having pressure drums 4, 6 and guide bars 8, 10, a drum cap 12 for adjusting the length of the pressure drums 4, 6 and guide bars 8, 10, an inner roller block 16 having a plurality of inner rollers 18 facing the pressure drums 4, 6 and mounted to a block housing 14 together with the drum block 2 so as for space to be adjusted, a slide support 22 mounted so as for space to be adjusted in the same direction as that of the inner roller block 16, and an outer roller block 26 mounted to the slide support 22 so as for height to be adjusted and having a plurality of outer rollers 24. It can apply to all kinds of car by simply adjusting the space between the pressure drums 4, 6 and inner and outer rollers 18, 24 and the height of outer rollers 24 according to the width and sectional shape of attaching surface of door sash portion 50.

Abstract: A chemical deposition reactor capable of switching rapidly from one process gas to another and method of forming a thin film using the same. The reactor of the present invention comprises: a reactor cover, having an inlet and an outlet, for keeping reactant gases from other part of the reactor where the pressure is lower than inside of the reactor; a gas flow control plate, fixed onto the reactor cover, for controlling the gas flow through inlet and outlet by the spacing between itself and the reactor cover; and a substrate supporting plate for confining a reaction cell with the reactor cover. The method of the present invention can be accomplished using the above reactor. In the method, process gases including a deposition gas, a reactant gas and a purge gas are sequentially and repeatedly supplied in the reactor to form a thin film on a substrate. A RF (Radio Frequency) plasma power is applied to a plasma electrode of the reactor synchronised with the supply of at least one among the process gases.

Abstract: A gas feeding system for applications such as chemical vapor deposition (CVD) is provided. The gas feeding system comprises a plurality of reactant source supply apparatuses that are connected to a reactor to supply different reactant sources therein discontinuously or sequentially. The gas feeding system includes a pass valve that is disposed in a supply tube between inlet and outlet valves of the reservoir for containing the reactant source. With the pass valve, the carrier gas passing therethrough flows into the reactor or the evacuation valve without passing through the reservoir when the inlet valve and outlet valve are closed to prevent the waste of non-use reactant sources. With the present invention gas feeding system, the uniformity and quality of the deposited film can be improved and the waste of reactant source can be reduced.

Abstract: The present invention relates to a tape attaching device used in attaching a tape to a car door sash, instead of painting. Tape attaching device comprises a drum block 2 having pressure drums 4, 6 and guide bars 8, 10, a drum cap 12 for adjusting the length of the pressure drums 4, 6 and guide bars 8, 10, an inner roller block 16 having a plurality of inner rollers 18 facing the pressure drums 4, 6 and mounted to a block housing 14 together with the drum block 2 so as for space to be adjusted, a slide support 22 mounted so as for space to be adjusted in the same direction as that of the inner roller block 16, and an outer roller block 26 mounted to the slide support 22 so as for height to be adjusted and having a plurality of outer rollers 24. It can apply to all kinds of car by simply adjusting the space between the pressure drums 4, 6 and inner and outer rollers 18, 24 and the height of outer rollers 24 according to the width and sectional shape of attaching surface of door sash portion 50.

Abstract: A metal oxide semiconductor device with a self-aligned groove channel structure is disclosed comprising a substrate in which a first channel region of a first conductivity type and source and drain regions of a second conductivity type are formed, a first gate insulating layer formed on the first channel region, and a first gate electrode formed on the gate insulating layer, a second gate electrode having a self-aligned groove structure formed at both sides of the first gate electrode; a second gate insulating layer formed between the substrate and the second gate insulating layer; and a non-planar second channel region of the first conductivity type formed under the second gate insulating layer and doped with a different concentration of an impurity from the first channel region. The groove structure prevents an electric field produced in the vicinity of a drain from penetrating into the channel region to lessen a short channel effect.

Abstract: There are disclosed a semiconductor device having electrical elements buried a SOI substrate and a manufacturing method thereof, the manufacturing method of the invention comprising the steps of: (a) forming a first isolating insulator layer at a seed wafer by using an isolation mask, depositing a second isolating insulator layer overlying the first isolating insulator layer and the seed wafer, and defining contact holes by using a contact mask to form contacts on the seed wafer; (b) depositing a first polysilicon layer on the second isolating insulator layer and the contacts and doping an impurity into the first polysilicon layer; (c) patterning the first polysilicon layer to define an electrical element, depositing an insulating layer around the electrical element, and forming a second polysilicon layer overlying the second isolating insulator layer and the insulating layer; (d) doping an impurity into the second polysilicon layer for connecting with a handling wafer, and polishing the second polysilicon la

Abstract: A bipolar DRAM comprises a switching transistor, a storage capacitor and a substrate. The switching transistor and the storage capacitor are vertically stacked with each other. The switching transistor is preferably an NPN bipolar transistor. The switching transistor preferably comprises P.sup.- base region, an N.sup.+ emitter region of the substrate, a N.sup.+ collector region, with a lower epitaxial layer between the N.sup.+ emitter region and P.sup.- base region, and an upper epitaxial layer between the P.sup.- base region and N.sup.+ collector region. The storage capacitor comprises a storage electrode formed on the N.sup.+ collector region, a dielectric layer and a plate electrode. The dielectric layer and the plate electrode are vertically and sequentially stacked on the storage electrode. A bit line is formed on the plate electrode, and a word line is formed on the side surface of the P.sup.+ base region.