Abstract: An inspection apparatus for a semiconductor process and a semiconductor process device, the inspection apparatus including a transferer configured to transfer a process object between a plurality of chambers; at least one line camera installed above the transferer, the at least one line camera being configured to generate an original image by capturing an image of the process object transferred by the transferer; and a controller configured to receive the original image and to perform an inspection of the process object by correcting distortion of the original image due to a change in transfer speed of the transferer.

Abstract: An inspection apparatus for a semiconductor process and a semiconductor process device, the inspection apparatus including a transferer configured to transfer a process object between a plurality of chambers; at least one line camera installed above the transferer, the at least one line camera being configured to generate an original image by capturing an image of the process object transferred by the transferer; and a controller configured to receive the original image and to perform an inspection of the process object by correcting distortion of the original image due to a change in transfer speed of the transferer.

Abstract: A surface inspection apparatus includes a camera that captures an image of an object to be inspected, a half mirror disposed above the camera on a first optical axis, and a light source disposed adjacent to the half mirror on a second optical axis that intersects the first optical axis. The light source radiates light, and the light is directed toward the object to be inspected by the half mirror. The surface inspection apparatus further includes a reflector disposed above the half mirror on the first optical axis. The reflector includes a reflective concave surface that faces toward the object to be inspected.

Abstract: A substrate transfer apparatus includes at least one levitation plate extending in a first direction, a first suction mover configured to be moved in the first direction along a side of the at least one levitation plate, and including a first suction pad configured to selectively suction a first part of a lower surface of a substrate, and a first rotation driving portion configured to rotate the first suction pad about a first central axis, and a second suction mover disposed to be spaced apart from the first suction mover, and configured to be moved in the first direction along the side of the at least one levitation plate, and including a second suction pad configured to selectively suction a second part of the lower surface of the substrate, and a second rotation driving portion configured to rotate the second suction pad about a second central axis.

Abstract: A pickup apparatus includes a plurality of pickers sliding along a first direction and a space adjuster including a plurality of space adjusting plates. Each picker includes a protruding portion combined with a picker body, and each of the space adjusting plates is between a respective pair of adjacent pickers. The protruding portion of each picker contacts sidewalls of adjacent space adjusting plates. At least one of the space adjusting plates moves along a second direction crossing the first direction. A width in the first direction of each space adjusting plate varies along the second direction.

Abstract: A pickup apparatus includes a plurality of pickers sliding along a first direction and a space adjuster including a plurality of space adjusting plates. Each picker includes a protruding portion combined with a picker body, and each of the space adjusting plates is between a respective pair of adjacent pickers. The protruding portion of each picker contacts sidewalls of adjacent space adjusting plates. At least one of the space adjusting plates moves along a second direction crossing the first direction. A width in the first direction of each space adjusting plate varies along the second direction.

Abstract: A substrate processing system includes an index module including wafer carriers. First and second heat processing units are disposed adjacent to the index module. Each of the first and second heat processing units includes a plurality of first heat processing plates sequentially stacked. First and second transfer robots are disposed adjacent to the first and second heat processing units, respectively. Each of the first and second transfer robots is movable along a vertical transfer path and to rotate. First and second coating units are disposed adjacent to first sides of the first and second transfer robots, respectively. Each of the first and second coating units includes a plurality of coating devices sequentially stacked. First and second bake units are disposed adjacent to second sides of the first and second transfer robots, respectively. Each of the first and second bake units includes a plurality of second heat processing plates sequentially stacked.

Abstract: An etchant composition including 0.5 wt % to 20 wt % of a persulfate, 0.01 wt % to 1 wt % of a fluorine compound, 1 wt % to 10 wt % of an inorganic acid, 0.01 wt % to 2 wt % of an azole-based compound, 0.1 wt % to 5 wt % of a chlorine compound, 0.05 wt % to 3 wt % of a copper salt, 0.01 wt % to 5 wt % of an antioxidant or a salt thereof, based on a total weight of the etchant composition, and water in an amount sufficient for the total weight of the etchant composition to be equal to 100 wt % is disclosed. The etchant composition is suitable for use in forming a metal wiring by etching a metal layer including copper or in fabricating a thin film transistor substrate for a display apparatus.

Abstract: An etchant composition including 0.5 wt % to 20 wt % of a persulfate, 0.01 wt % to 1 wt % of a fluorine compound, 1 wt % to 10 wt % of an inorganic acid, 0.01 wt % to 2 wt % of an azole-based compound, 0.1 wt % to 5 wt % of a chlorine compound, 0.05 wt % to 3 wt % of a copper salt, 0.01 wt % to 5 wt % of an antioxidant or a salt thereof, based on a total weight of the etchant composition, and water in an amount sufficient for the total weight of the etchant composition to be equal to 100 wt % is disclosed. The etchant composition is suitable for use in forming a metal wiring by etching a metal layer including copper or in fabricating a thin film transistor substrate for a display apparatus.

Abstract: An etchant composition includes about 25 percent by weight to about 35 percent by weight of phosphoric acid, about 3 percent by weight to about 9 percent by weight of nitric acid, about 10 percent by weight to about 20 percent by weight of acetic acid, about 5 percent by weight to about 10 percent by weight of a nitrate, about 6 percent by weight to about 15 percent by weight of a sulfonic acid, about 1 percent by weight to about 5 percent by weight of an amine compound including a carboxyl group, about 0.1 percent by weight to about 1 percent by weight of a water-soluble amino acid, about 0.01 percent by weight to about 1 percent by weight of an azole compound, and water.

Abstract: A metal wire etchant including persulfate, a sulfonate, a fluorine compound, an azole-based compound, an organic acid, a nitrate, and a chlorine compound, and a method of making the same.

Abstract: An etchant composition includes about 25 percent by weight to about 35 percent by weight of phosphoric acid, about 3 percent by weight to about 9 percent by weight of nitric acid, about 10 percent by weight to about 20 percent by weight of acetic acid, about 5 percent by weight to about 10 percent by weight of a nitrate, about 6 percent by weight to about 15 percent by weight of a sulfonic acid, about 1 percent by weight to about 5 percent by weight of an amine compound including a carboxyl group, about 0.1 percent by weight to about 1 percent by weight of a water-soluble amino acid, about 0.01 percent by weight to about 1 percent by weight of an azole compound, and water.

Abstract: Provided is a scanning electron microscope capable of collecting electric charges accumulated on a sample. The scanning electron microscope includes a column unit configured to generate an electron beam and scan a sample with the electron beam, a chamber unit combined with the column unit, and including a sample stage spaced apart from an end of the column unit to accommodate the sample therein, a detection unit configured to detect signals emitted from the sample, a charge collecting unit disposed between the end of the column unit and the sample stage to collect electric charges, and a voltage supply unit configured to apply an optimum or, alternatively, desirable voltage to the charge collecting unit.

Abstract: A wet etching composition usable for etching a copper-based wiring layer includes between about 40% by weight to about 60% by weight of phosphoric acid, between about 1% by weight to about 10% by weight of nitric acid, between about 3% by weight to about 15% by weight of acetic acid, between about 0.01% by weight to about 0.

Abstract: An etching composition for a copper-containing layer includes about 0.1% to about 30% by weight of ammonium persulfate, about 0.1% to about 10% by weight of a sulfate, about 0.01% to about 5% by weight of an acetate and about 55% to about 99.79% by weight of water. The etching composition having improved stability during storage and an increased capacity for etching.

Abstract: A metal wire etchant including persulfate, a sulfonate, a fluorine compound, an azole-based compound, an organic acid, a nitrate, and a chlorine compound, and a method of making the same.

Abstract: An etching composition for a copper-containing layer includes about 0.1% to about 30% by weight of ammonium persulfate, about 0.1% to about 10% by weight of a sulfate, about 0.01% to about 5% by weight of an acetate and about 55% to about 99.79% by weight of water.

Abstract: Exemplary embodiments of the present invention provide a metal wiring etchant. A metal wiring etchant according to an exemplary embodiment of the present invention includes ammonium persulfate, an organic acid, an ammonium salt, a fluorine-containing compound, a glycol-based compound, and an azole-based compound.

Abstract: An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH4)2S2O8, about 0.1 percent by weight to about 10 percent by weight of an inorganic acid, about 0.1 percent by weight to about 10 percent by weight of an acetate salt, about 0.01 percent by weight to about 5 percent by weight of a fluorine-containing compound, about 0.01 percent by weight to about 5 percent by weight of a sulfonic acid compound, about 0.01 percent by weight to about 2 percent by weight of an azole compound, and a remainder of water. Accordingly, the etchant may have high stability to maintain etching ability. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.

Abstract: An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH4)2S2O8, about 0.1 percent by weight to about 10 percent by weight of an inorganic acid, about 0.1 percent by weight to about 10 percent by weight of an acetate salt, about 0.01 percent by weight to about 5 percent by weight of a fluorine-containing compound, about 0.01 percent by weight to about 5 percent by weight of a sulfonic acid compound, about 0.01 percent by weight to about 2 percent by weight of an azole compound, and a remainder of water. Accordingly, the etchant may have high stability to maintain etching ability. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.