Patents by Inventor Won Han
Won Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12624679Abstract: A power generator is provided including a first outer case in which an internal space is formed; a first mainspring module having a first spring providing rotational force as it is wound and unwound; a first inner case which covers the first mainspring module and rotates about a rotation axis according to the rotational force provided by the first spring; a second outer case in which an internal space is formed and disposed on the first outer case; a second mainspring module having a second spring providing rotational force as it is wound and unwound; a second inner case which covers the second mainspring module and rotates about the rotation axis according to the rotational force provided by the second spring; and a first holder module coupled to the first outer case to limit the unwinding of the first spring until the unwinding of the second spring is completed.Type: GrantFiled: June 7, 2024Date of Patent: May 12, 2026Assignee: Pukyong National University Industry-University Cooperation FoundationInventors: Joong Ho Shin, Won Han, Se Been Park
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Patent number: 12611675Abstract: A multi-chamber cartridge and a nucleic acid extraction module including the same are provided. The multi-chamber cartridge according to an aspect of the present invention may include a sample chamber including a first tube which is an elongated hollow type, a sample chamber body in which a mixing space is formed and one end of the first tube is disposed in the mixing space, a first pressure gasket which can be coupled to the inside of the first tube and is movable along the inner peripheral surface of the first tube, a first separation gasket which is disposed on one surface of the first pressure gasket, coupled to the inside of the first tube, and movable along the inner peripheral surface of the first tube, and a first plunger having one end coupled to the other surface of the first pressure gasket and pressing the first pressure gasket; and a cartridge body which includes an accommodating part in which the sample chamber is detachably accommodated.Type: GrantFiled: May 12, 2023Date of Patent: April 28, 2026Assignee: Pukyong National University Industry-University Cooperation FoundationInventors: Joong Ho Shin, Won Han, Thang Tran Huy Le
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Patent number: 12525953Abstract: A bulk acoustic resonator includes a resonance portion including a first electrode, a piezoelectric layer disposed on the first electrode along a height direction, and a second electrode disposed on the piezoelectric layer along the height direction. The resonance portion includes an overlapping region in which the first electrode, the piezoelectric layer, and the second electrode overlap each other along the height direction. The overlapping region includes a central portion and an edge portion disposed outside the central portion, and including a first edge portion and a second edge portion. A height of the second electrode of the first edge portion and a height of the second electrode of the second edge portion are lower than a height of the second electrode of the central portion along the height direction, and are different from each other along the height direction.Type: GrantFiled: February 22, 2024Date of Patent: January 13, 2026Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Won Han, Sang Uk Son, Jong Woon Kim, Sungwook Kim, Jeong Hoon Ryou, Daehun Jeong, Jung-Eun Youm, Sangheon Han, Jeonga Kim, Hwasun Lee
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Patent number: 12401343Abstract: An acoustic resonator includes a substrate and a resonant portion. The resonant portion has a central portion in which a first electrode, a first piezoelectric layer, a second piezoelectric layer, and a second electrode are stacked in order on the substrate, and an extension portion extending outwardly from the central portion and including an insertion layer. A ratio of an average thickness of the first piezoelectric layer to an average thickness of the second piezoelectric layer is 18.4% to 40%.Type: GrantFiled: January 20, 2022Date of Patent: August 26, 2025Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Sang Heon Han, Won Han, Tae Hun Lee, Chang Hyun Lim, Ran Hee Shin
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Patent number: 12334897Abstract: A bulk-acoustic wave (BAVV) resonator is provided. The BAW includes a substrate, a first electrode disposed on the substrate, a piezoelectric layer disposed to cover at least a portion of the first electrode, and a second electrode disposed to cover at least a portion of the piezoelectric layer, wherein the piezoelectric layer includes an intermediate layer, a first layer disposed above the intermediate layer and a second layer disposed below the intermediate layer, the first layer and the second layer are symmetrical in relation to a plane through which a central line of the intermediate layer passes in a thickness direction, and a thickness of the intermediate layer is greater than a thickness of each of the first and second layers.Type: GrantFiled: October 6, 2021Date of Patent: June 17, 2025Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Sang Heon Han, Won Han, Chang Hyun Lim, Sung Joon Park, Jae Goon Aum
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Publication number: 20240410342Abstract: A power generator is provided including a first outer case in which an internal space is formed; a first mainspring module having a first spring providing rotational force as it is wound and unwound; a first inner case which covers the first mainspring module and rotates about a rotation axis according to the rotational force provided by the first spring; a second outer case in which an internal space is formed and disposed on the first outer case; a second mainspring module having a second spring providing rotational force as it is wound and unwound; a second inner case which covers the second mainspring module and rotates about the rotation axis according to the rotational force provided by the second spring; and a first holder module coupled to the first outer case to limit the unwinding of the first spring until the unwinding of the second spring is completed.Type: ApplicationFiled: June 7, 2024Publication date: December 12, 2024Inventors: Joong Ho SHIN, Won HAN, Se Been PARK
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Publication number: 20240364299Abstract: A bulk acoustic resonator includes an active region in which a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode in a height direction, and a second electrode disposed on the piezoelectric layer in the height direction overlap each other in the height direction; a peripheral region in which the first electrode or the second electrode extends outwardly from the active region so that the first electrode and the second electrode do not overlap each other in the height direction in the peripheral region; and an auxiliary layer disposed in the peripheral region, wherein a first cutoff frequency of the active region is substantially equal to a second cutoff frequency of the peripheral region.Type: ApplicationFiled: March 18, 2024Publication date: October 31, 2024Applicant: Samsung Electro-Mechanics Co., Ltd.Inventors: Jong Woon KIM, Jeonga KIM, Jeong Hoon RYOU, Won HAN, Sang Uk SON, Tae Kyung LEE
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Publication number: 20240356524Abstract: A bulk acoustic resonator includes a resonance portion including a first electrode, a piezoelectric layer disposed on the first electrode along a height direction, and a second electrode disposed on the piezoelectric layer along the height direction. The resonance portion includes an overlapping region in which the first electrode, the piezoelectric layer, and the second electrode overlap each other along the height direction. The overlapping region includes a central portion and an edge portion disposed outside the central portion, and including a first edge portion and a second edge portion. A height of the second electrode of the first edge portion and a height of the second electrode of the second edge portion are lower than a height of the second electrode of the central portion along the height direction, and are different from each other along the height direction.Type: ApplicationFiled: February 22, 2024Publication date: October 24, 2024Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Won HAN, Sang Uk SON, Jong Woon KIM, Sungwook KIM, Jeong Hoon RYOU, Daehun JEONG, Jung-Eun YOUM, Sangheon HAN, Jeonga KIM, Hwasun LEE
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Patent number: 12057822Abstract: A bulk acoustic resonator includes a first electrode disposed on an upper side of a substrate, a piezoelectric layer disposed on an upper surface of the first electrode, and a second electrode disposed on an upper surface of the piezoelectric layer, wherein an upper surface of at least one of the first electrode and the second electrode has a recess region, wherein a depth of the recess region is D, a width of the recess region is W, and a resonance frequency is F, and ln is a natural logarithm, and wherein [{ln(D*W)}/(?0.59*F)] is [[ln{0.008 (?m)2}]/{?0.59*(3.5 GHz)}] or more and [[ln{0.022 (?m)2}]/{?0.59*(3.5 GHz)}] or less.Type: GrantFiled: May 4, 2021Date of Patent: August 6, 2024Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Sang Uk Son, Sung Wook Kim, Won Han, Jong Woon Kim, Jeong Hoon Ryou, Sang Heon Han
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Patent number: 11870419Abstract: A bulk acoustic wave resonator includes a substrate, a first electrode, wherein a cavity is formed between the substrate and the first electrode, a piezoelectric layer disposed on the first electrode and overlapping at least a portion of the first electrode, a second electrode disposed on the piezoelectric layer and overlapping at least a portion of the piezoelectric layer, a passivation layer having at least a portion disposed on the second electrode and overlapping at least a portion of the second electrode, and a lower frame spaced apart from the substrate and having a portion of the cavity disposed therebetween. Any one of the second electrode and the passivation layer includes a protruding portion having a first thickness and an extended portion having a second thickness less than the first thickness, and an inner end of the lower frame and an end of the protruding portion are spaced apart horizontally.Type: GrantFiled: April 5, 2021Date of Patent: January 9, 2024Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Won Han, Sang Uk Son, Tae Yoon Kim, Chang Hyun Lim, Sang Heon Han, Jong Beom Kim
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Patent number: 11843365Abstract: A bulk-acoustic wave resonator includes a resonator including a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion; and an insertion layer disposed between the piezoelectric layer and the substrate in the extension portion to raise the piezoelectric layer. The insertion layer includes a first insertion layer having a first inclined surface formed along a side surface facing the central portion and a second inclined surface disposed between the first insertion layer and the piezoelectric layer and having a second inclined surface spaced apart from the first inclined surface with respect to a surface direction of the first electrode. The first insertion layer is thinner than the second insertion layer.Type: GrantFiled: January 8, 2021Date of Patent: December 12, 2023Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Tae Kyung Lee, Won Han, Moon Chul Lee, Sang Uk Son, Hwa Sun Lee
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Publication number: 20230364620Abstract: A multi-chamber cartridge and a nucleic acid extraction module including the same are provided. The multi-chamber cartridge according to an aspect of the present invention may include a sample chamber including a first tube which is an elongated hollow type, a sample chamber body in which a mixing space is formed and one end of the first tube is disposed in the mixing space, a first pressure gasket which can be coupled to the inside of the first tube and is movable along the inner peripheral surface of the first tube, a first separation gasket which is disposed on one surface of the first pressure gasket, coupled to the inside of the first tube, and movable along the inner peripheral surface of the first tube, and a first plunger having one end coupled to the other surface of the first pressure gasket and pressing the first pressure gasket; and a cartridge body which includes an accommodating part in which the sample chamber is detachably accommodated.Type: ApplicationFiled: May 12, 2023Publication date: November 16, 2023Inventors: Joong Ho SHIN, Won HAN, Thang Tran Huy LE
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Publication number: 20230216470Abstract: A bulk acoustic wave resonator includes a substrate; a central portion including a first portion of a first electrode, a first portion of a piezoelectric layer, and a first portion of a second electrode laminated in order on the substrate; and a reflective region disposed laterally of the central portion and including a second portion of the first electrode, an insertion layer, a second portion of the piezoelectric layer, and a second portion of the second electrode. A side surface of the insertion layer adjacent to the central portion has an inclined surface, the first portion of the second electrode and the second portion of the second electrode are coplanar, and an end of the second electrode overlaps the inclined surface of the insertion layer in the reflective region.Type: ApplicationFiled: May 25, 2022Publication date: July 6, 2023Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Won HAN, Hwa Sun LEE, Jeong Hoon RYOU, Moon Chul LEE, Tae Yoon KIM, Sang Kee YOON, Yong Suk KIM, Joung Hun KIM, Sung Jun LEE, Sung Joon PARK
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Publication number: 20230125049Abstract: A bulk acoustic wave filter includes series resonators connected to a series arm, and parallel resonators connected to a parallel arm connected to the series arm. Two or more of the series resonators are disposed in parallel on the series arm, and each includes a substrate, a lower electrode on the substrate, a piezoelectric layer on the lower electrode, and an upper electrode on the piezoelectric layer, wherein, when an active region in which the lower electrode, the piezoelectric layer, and the upper electrode overlap each other is viewed from above, a centroid of the active region and a center of a rectangle defining an aspect ratio of the active region match each other, and when the active region is viewed from above, the active region has a shape of polygon symmetrical with respect to at least one axis passing through a center of the rectangle defining the aspect ratio.Type: ApplicationFiled: February 18, 2022Publication date: April 20, 2023Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Hyun Min HWANG, Won HAN, Jeong Hoon RYOU, Jae Hyoung GIL, Dong Hoe KIM
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Publication number: 20230072487Abstract: A bulk acoustic wave resonator is provided. The bulk acoustic wave resonator includes a board; a resonant portion including a first electrode, a piezoelectric layer, and a second electrode, and disposed on the board, and a temperature compensation layer disposed on the resonant portion, wherein the temperature compensation layer includes a temperature compensation portion formed of a dielectric and a loss compensation portion formed of a material different from a material of the temperature compensation portion, and wherein each of the temperature compensation portion and the loss compensation portion includes a plurality of linear patterns, and the linear patterns of the temperature compensation portion and the linear patterns of the loss compensation portion are alternately disposed.Type: ApplicationFiled: February 22, 2022Publication date: March 9, 2023Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Won HAN, Hwa Sun LEE, Moon Chul LEE, Jeong Hoon RYOU, Tae Yoon KIM, Sang Kee YOON, Yong Suk KIM, Joung Hun KIM, Tae Kyung LEE, Jae Hyoung GIL
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Patent number: 11595022Abstract: A bulk-acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially covering the lower electrode; and an upper electrode at least partially covering the piezoelectric layer. On a surface of the bulk-acoustic wave resonator, a centroid of an active area in which the lower electrode, the piezoelectric layer, and the upper electrode all overlap each other is aligned with a center of a rectangle defining an aspect ratio of the active area. The active area has a shape of a polygon symmetrical with respect to at least one axis passing through the center of the rectangle defining the aspect ratio. The aspect ratio is greater than or equal to 2 and less than or equal to 10.Type: GrantFiled: June 11, 2020Date of Patent: February 28, 2023Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Won Han, Sung Wook Kim, Dae Hun Jeong, Sang Uk Son, Sang Heon Han, Jeong Hoon Ryou
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Publication number: 20230022838Abstract: An acoustic resonator includes a substrate and a resonant portion. The resonant portion has a central portion in which a first electrode, a first piezoelectric layer, a second piezoelectric layer, and a second electrode are stacked in order on the substrate, and an extension portion extending outwardly from the central portion and including an insertion layer. A ratio of an average thickness of the first piezoelectric layer to an average thickness of the second piezoelectric layer is 18.4% to 40%.Type: ApplicationFiled: January 20, 2022Publication date: January 26, 2023Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.Inventors: Sang Heon HAN, Won HAN, Tae Hun LEE, Chang Hyun LIM, Ran Hee SHIN
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Patent number: 11563417Abstract: An acoustic resonator includes: a substrate; a resonant region including a first electrode, a piezoelectric layer, and a second electrode disposed on the substrate, and a reflective layer disposed along a periphery of the resonant region; and a connection electrode extending from the second electrode. The reflective layer includes a second section disposed between the resonant region and the connection electrode, and a first section, and a cross-sectional area of the first section is different than a cross-sectional area of the second section.Type: GrantFiled: September 21, 2018Date of Patent: January 24, 2023Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Dae Hun Jeong, Sang Uk Son, Won Han, Jong Woon Kim
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Patent number: 11558025Abstract: A bulk-acoustic wave resonator includes: a first electrode; a piezoelectric layer at least partially disposed on an upper portion of the first electrode; and a second electrode disposed to cover at least a portion of the piezoelectric layer. The second electrode includes a frame disposed at an edge of an active region of the bulk-acoustic wave resonator, and the first electrode, the piezoelectric layer and the second electrode are disposed to overlap one another at the edge of the active region. The frame includes a wall disposed at the edge of the active region and a trench formed on an internal side of the wall. An internal boundary line of the trench has a concave-convex shape in a plane parallel to an upper surface of the frame.Type: GrantFiled: October 20, 2020Date of Patent: January 17, 2023Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Jeong Hoon Ryou, Sang Uk Son, Sung Wook Kim, Won Han, Dae Hun Jeong, Sang Heon Han
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Patent number: 11558027Abstract: A bulk-acoustic wave resonator includes: a substrate; a membrane layer forming a cavity with the substrate; a lower electrode disposed on the membrane layer; an insertion layer disposed to cover at least a portion of the lower electrode; a piezoelectric layer disposed on the lower electrode to cover the insertion layer; and an upper electrode at least partially disposed on the piezoelectric layer, wherein the upper electrode includes a reflection groove disposed on the insertion layer.Type: GrantFiled: March 25, 2019Date of Patent: January 17, 2023Assignee: Samsung Electro-Mechanics Co., Ltd.Inventors: Dae Hun Jeong, Sung Wook Kim, Sang Uk Son, Sang Heon Han, Won Han