Abstract: The present disclosure relates to an antenna element including: a dielectric layer; a radiation electrode arranged on an upper surface of the dielectric layer and including a first mesh structure; and a dummy electrode arranged on the upper surface of the dielectric layer and including a second mesh structure, in which at least one of the radiation electrode and the dummy electrode satisfies Equation 1, and an image display device including the same.

Abstract: Disclosed is an ionomer for a high-temperature polymer electrolyte membrane fuel cell, which includes a phosphorus (P)-containing functional group having proton conductivity and partially contains fluorine in the main chain thereof.

Abstract: A light emitting device includes: a first electrode and a second electrode facing each other, an emissive layer disposed between the first electrode and the second electrode and including a quantum dot, an electron auxiliary layer disposed between the emissive layer and the second electrode and including a plurality of nanoparticles, and a polymer layer between a portion of the second electrode and the electron auxiliary layer, wherein the nanoparticles include a metal oxide including zinc, wherein the second electrode has a first surface facing a surface of the electron auxiliary layer and a second surface opposite to the first surface, and the polymer layer is disposed on a portion of the second surface and a portion of the surface of the electron auxiliary layer, and wherein the polymer layer includes a polymerization product of a thiol compound and an unsaturated compound having at least two carbon-carbon unsaturated bonds.

Abstract: A light emitting device includes: a first electrode and a second electrode facing each other, an emissive layer disposed between the first electrode and the second electrode and including a quantum dot, an electron auxiliary layer disposed between the emissive layer and the second electrode and including a plurality of nanoparticles, and a polymer layer between a portion of the second electrode and the electron auxiliary layer, wherein the nanoparticles include a metal oxide including zinc, wherein the second electrode has a first surface facing a surface of the electron auxiliary layer and a second surface opposite to the first surface, and the polymer layer is disposed on a portion of the second surface and a portion of the surface of the electron auxiliary layer, and wherein the polymer layer includes a polymerization product of a thiol compound and an unsaturated compound having at least two carbon-carbon unsaturated bonds.

Abstract: A compound represented by Formula 1, a stereoisomer thereof or a pharmaceutically acceptable salt thereof may be used for treating or preventing an autoimmune disease or a cancer. The autoimmune disease may be any one selected from the group consisting of inflammatory bowel disease, multiple sclerosis, graft-versus-host disease, asthma, atopy, psoriasis, rheumatoid arthritis, systemic lupus erythematous and type 1 diabetes. The cancer may be selected from the group consisting of colon cancer, melanoma, liver cancer, gliocytoma, ovarian cancer, colorectal cancer, head and neck cancer, bladder cancer, kidney cell cancer, stomach cancer, breast cancer, metastatic cancer, prostate cancer, gallbladder cancer, pancreatic cancer, blood cancer, skin cancer and lung cancer.

Abstract: A compound represented by Formula 1, a stereoisomer thereof or a pharmaceutically acceptable salt thereof may be used for treating or preventing an autoimmune disease or a cancer. The autoimmune disease may be any one selected from the group consisting of inflammatory bowel disease, multiple sclerosis, graft-versus-host disease, asthma, atopy, psoriasis, rheumatoid arthritis, systemic lupus erythematous and type 1 diabetes. The cancer may be selected from the group consisting of colon cancer, melanoma, liver cancer, gliocytoma, ovarian cancer, colorectal cancer, head and neck cancer, bladder cancer, kidney cell cancer, stomach cancer, breast cancer, metastatic cancer, prostate cancer, gallbladder cancer, pancreatic cancer, blood cancer, skin cancer and lung cancer.

Abstract: A compound according to an embodiment is represented by Formula 1. The compound may be used for treatment of autoimmune diseases. A composition for treatment or prevention of autoimmune diseases includes the compound and is expected to not only control inflammation but also recover immune balance as well as damaged tissues, thereby restoring bowel tissue homeostasis.

Abstract: The present invention provides: a novel pseudoceramide compound, an isomer thereof, a pharmaceutically acceptable salt thereof, a prodrug thereof, a hydrate thereof or a solvate thereof. The present invention has a skin protecting effect in that the invention has a superior effect in skin moisturisation and is outstandingly stable and soluble, and thus the invention can protect the skin from external irritation without side effects, and can be used as an active substance in damaged skin recovery and prevention. Consequently, the invention can be used as a skin-moisturising dermatological external composition, cosmetic composition or pharmaceutical composition.

Abstract: A contact forming method of a semiconductor device is disclosed, in which a pad polysilicon layer is formed at an active region of a cell array, thereafter an upper portion of a gate is opened when a spacer of a NMOS transistor region is formed. And at the same time a gate capping insulating layer of the cell array region, the active region of the NMOS transistor and the gate node contact region remains at a predetermined thickness by etching the spacer. And then, by performing an ion implantation procedure on the entire surface, the direct pad polysilicon layer and the buried pad polysilicon layer are simultaneously ion-implanted.

Abstract: A contact forming method of a semiconductor device is disclosed, in which a pad polysilicon layer is formed at an active region of a cell array, thereafter an upper portion of a gate is opened when a spacer of a NMOS transistor region is formed. And at the same time a gate capping insulating layer of the cell array region, the active region of the NMOS transistor and the gate node contact region remains at a predetermined thickness by etching the spacer. And then, by performing an ion implantation procedure on the entire surface, the direct pad polysilicon layer and the buried pad polysilicon layer are simultaneously ion-implanted.

Abstract: A process for manufacturing a dynamic random access memory (DRAM) cell wherein an improvement is made in an occurrence of soft errors in operation of a memory device, said soft errors resulting from alpha particles being produced from uranium-series materials included in fabricating materials during fabrication of memory chips, especially in the package of the chip. In a single transistor memory cell, through forming boron layers below a storage capacitor region and below a drain region of the transistor coupled with a bit line, a barrier is formed against the minority carriers resulting from the alpha particles within the substrate. Also, through enlarging the storage capacitor region toward a field oxide layer just around the capacitor perimeter, a capacitance of the storage capacitor is increased so that the influence of the soft errors is negligible.