Abstract: A display device includes a first electrode and a second electrode spaced apart from each other, a third electrode and a fourth electrode intersecting the first and second electrodes and spaced apart from each other, and light emitting elements disposed between the first and second electrodes. A first end of each of the light emitting elements faces the third electrode, and a second end of each of the light emitting elements faces the fourth electrode.

Abstract: Provided are an inkjet printing device, a method for printing bipolar elements, and a method for manufacturing a display device. The inkjet printing device includes an inkjet head disposed above a stage and including a plurality of nozzles through which ink including bipolar elements each having areas doped with partially different polarities is discharged; an actuator disposed in the inkjet head and adjusting an amount of droplet of the ink discharged through the plurality of nozzles; and at least one sensing part disposed in the inkjet head and measuring a number of bipolar elements discharged through the plurality of nozzles.

Abstract: A display device includes at least one pixel; at least one electrode spaced apart from each other in each of the at least one pixel; and at least one light-emitting element disposed between the at least one electrode, wherein the at least one electrode include at least one inner electrode disposed adjacent to the center of each of the at least one pixel; and at least one outer electrode spaced apart from each of the at least one inner electrode, a distance between the central portion of the at least one pixel and the at least one outer electrode is greater than a distance between the central portion of the at least one pixel and the inner electrode, and a width of the at least one inner electrode is different from a width of the at least one outer electrode.

Abstract: A display device includes a first substrate, a conductive layer including a first voltage line, a second voltage line, and a third voltage line spaced from each other along a first direction on the first substrate, an interlayer insulating layer on the conductive layer, first and second electrodes on the interlayer insulating layer and spaced from each other along the first direction, a plurality of light emitting elements having at least one end on the first electrode or the second electrode, a first contact electrode on first ends of some of the plurality of light emitting elements and not overlapping the first electrode and the second electrode, and a second contact electrode on second ends of some of the plurality of light emitting elements, where the first electrode and the second electrode do not overlap the first voltage line and the third voltage line, respectively.

Abstract: A display device includes a first electrode and a second electrode disposed on a substrate, spaced apart from each other in a first direction, and extending in a second direction; and a plurality of light-emitting elements disposed on the first and second electrodes and spaced apart from one another in the second direction, wherein the first electrode includes at least one first part having a greater width than the second electrode in the first direction and at least one second part having a smaller width than the at least one first part in the first direction.

Abstract: The present invention relates to an organometal complex and a chemical vapor deposition (CVD) or atomic layer deposition (ALD) method for preparing a metal silicate thin layer using same. The inventive method can easily prepare the metal silicate thin layer having a desired composition which can be effectively used as a gate insulating layer for various semiconductor devices.

Abstract: The present invention relates to an organometal complex and a chemical vapor deposition (CVD) or atomic layer deposition (ALD) method for preparing a metal silicate thin layer using same. The inventive method can easily prepare the metal silicate thin layer having a desired composition which can be effectively used as a gate insulating layer for various semiconductor devices.