Patents by Inventor Won Hyo CHA

Won Hyo CHA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and manufacturing method of the semiconductor device
    Patent number: 11145675
    Abstract: A semiconductor device includes stack structures each including a first conductive layer, a substrate disposed under the stack structures, first impurity regions disposed in the substrate, and at least one trench passing through the stack structures and disposed above the first impurity regions.
    Type: Grant
    Filed: May 15, 2020
    Date of Patent: October 12, 2021
    Assignee: SK hynix Inc.
    Inventors: Yung Jun Kim, Won Hyo Cha, Byung Soo Park, Sang Tae Ahn, Sung Jae Chung
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE
    Publication number: 20200279865
    Abstract: A semiconductor device includes stack structures each including a first conductive layer, a substrate disposed under the stack structures, first impurity regions disposed in the substrate, and at least one trench passing through the stack structures and disposed above the first impurity regions.
    Type: Application
    Filed: May 15, 2020
    Publication date: September 3, 2020
    Applicant: SK hynix Inc.
    Inventors: Yung Jun KIM, Won Hyo CHA, Byung Soo PARK, Sang Tae AHN, Sung Jae CHUNG
  • Semiconductor device and manufacturing method of the semiconductor device
    Patent number: 10692885
    Abstract: A semiconductor device includes stack structures each including a first conductive layer, a substrate disposed under the stack structures, first impurity regions disposed in the substrate, and at least one trench passing through the stack structures and disposed above the first impurity regions.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: June 23, 2020
    Assignee: SK hynix Inc.
    Inventors: Yung Jun Kim, Won Hyo Cha, Byung Soo Park, Sang Tae Ahn, Sung Jae Chung
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE
    Publication number: 20190287999
    Abstract: A semiconductor device includes stack structures each including a first conductive layer, a substrate disposed under the stack structures, first impurity regions disposed in the substrate, and at least one trench passing through the stack structures and disposed above the first impurity regions.
    Type: Application
    Filed: October 25, 2018
    Publication date: September 19, 2019
    Applicant: SK hynix Inc.
    Inventors: Yung Jun KIM, Won Hyo CHA, Byung Soo PARK, Sang Tae AHN, Sung Jae CHUNG