Patents by Inventor Won Hyo JOO

Won Hyo JOO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing MoShaving 1T crystal structure
    Patent number: 11525189
    Abstract: Provided is a method of manufacturing MoS2 having a 1T crystal structure. The method includes performing phase transition from a 2H crystal structure of MoS2 to the 1T crystal structure by reacting MoS2 having the 2H crystal structure with CO gas. The phase transition includes annealing the MoS2 having the 2H crystal structure in an atmosphere including CO gas.
    Type: Grant
    Filed: November 6, 2019
    Date of Patent: December 13, 2022
    Assignee: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
    Inventors: Young Chang Joo, Won Hyo Joo, Dae Hyun Nam, Ji Yong Kim
  • METHOD OF MANUFACTURING MOS2 HAVING 1T CRYSTAL STRUCTURE
    Publication number: 20200291540
    Abstract: Provided is a method of manufacturing MoS2 having a 1T crystal structure. The method includes performing phase transition from a 2H crystal structure of MoS2 to the 1T crystal structure by reacting MoS2 having the 2H crystal structure with CO gas. The phase transition includes annealing the MoS2 having the 2H crystal structure in an atmosphere including CO gas.
    Type: Application
    Filed: November 6, 2019
    Publication date: September 17, 2020
    Inventors: Young Chang JOO, Won Hyo JOO, Dae Hyun NAM, Ji Yong KIM