Abstract: A device for manufacturing a display device includes a deposition source; a deposition thickness calculator for calculating a deposition thickness of a deposition material deposited on a substrate; and a controller for controlling a power of a heater which heats the deposition source by comparing the deposition thickness calculated with a reference thickness. The controller controls the power of the heater either at least one time for each substrate on which the thin film is to be deposited or at regular intervals while the deposition material is deposited. Influence of measurement noise that is included in a quartz crystal sensor for measuring a deposition speed may be minimized, and distribution of deposition thickness of an organic light emitting material may be reduced, thereby increasing the yield of the deposition process and producing quality display devices.

Abstract: A sputtering method includes receiving etch time information for a first substrate detected in a dry etching process, calculating a deposition time for a second substrate from the etch time information for the first substrate, and executing sputtering for the second substrate based the calculated deposition time. The thickness of the thin film deposited on the substrate in the sputter device may be uniformly maintained by using etch end point information detected in an end point detection (EPD) device. A sputtering system comprises a sputter device for executing a sputtering process for depositing a thin film on a substrate by a sputtering method, an EPD device for generating EPD information including etch time information for the substrate for a calculation of a deposition time during which the thin film is deposited, and a controller for calculating a deposition time by using the EPD information, and for controlling the sputter device based on the calculated deposition time.

Abstract: A critical dimension controlling method in a semiconductor production process includes determining whether a model is to undergo a discontinuous production process when a run is inserted in a semiconductor manufacturing line, applying an offset for said model or a common offset for a model group including said model according to the determination, executing a production process in dependence upon a process variation along with the offset for the model or the common offset for the model group, and measuring an actual critical dimension in the production process. The offset for the model is calculated based on a previously measured actual critical dimension, and the calculated offset for the model is applied to the calculation of the common offset for the model group.

Abstract: A virtual measuring device and a method for measuring the deposition thickness of amorphous silicon being deposited on a substrate is disclosed, where the method of measuring the deposition thickness of amorphous silicon includes predicting and adapting operations. In the predicting operation, during a process of depositing the amorphous silicon to a substrate, the deposition thickness is predicted by multiplying a predicted deposition speed to a deposition time by using a prediction model expressing a relationship between a deposition speed and a plurality of process factors that are correlated with the deposition speed obtained from the deposition thickness and the deposition time, and the predicted deposition thickness is compared with the measured deposition thickness, so that the relationship between the plurality of process factors and the deposition speed in the prediction model is compensated according to the comparison difference.

Abstract: An evaporator for depositing material on a substrate includes a crucible configured to receive a deposition material, and a plurality of nozzles in fluid communication with the crucible and facing the substrate, the nozzles projecting away from the crucible and being arranged in a first direction along the crucible, at least two of the nozzles being inclined with respect to a normal to the substrate.

Abstract: The disclosed is a density sensing device of a fuel cell system and a fuel cell system having the density sensing device. The density sensing device includes a density sensor that includes a collision sensor and a variable resistor coupled to the collision sensor. The collision sensor is dipped into a fuel solution, and the collisions of molecules of the fuel solution are detected in the collision sensor. The resistance of the variable resistor varies depending on an amount of the collision detected by the collision sensor. The resistance further is converted to a density by the use of a table that includes a relationship between resistance and density. The density sensing device can further include a sensor driver. The sensor driver can be a piezoelectric member that is attached to the collision sensor. The collision sensor vibrates together with the piezoelectric member when a driving signal is applied to the piezoelectric member, which improves the accuracy of the measurement of the density.

Abstract: An air supply system for a fuel cell and a fuel supply system with the same include a housing having an inlet hole and an outlet hole for respectively allowing inward and outward flow of a fluid; an air pump inserted and installed into the housing and having an inlet tube into which the fluid flows and an outlet tube through which the fluid flows out; a filtering portion installed between the inlet hole and the outlet hole within the housing and filtering particulate contaminants and chemical contaminants in the fluid; and a soundproofing member installed between the outlet tube and the outlet hole within the housing.

Abstract: A sputtering method includes receiving etch time information for a first substrate detected in a dry etching process, calculating a deposition time for a second substrate from the etch time information for the first substrate, and executing sputtering for the second substrate based the calculated deposition time. The thickness of the thin film deposited on the substrate in the sputter device may be uniformly maintained by using etch end point information detected in an end point detection (EPD) device. A sputtering system comprises a sputter device for executing a sputtering process for depositing a thin film on a substrate by a sputtering method, an EPD device for generating EPD information including etch time information for the substrate for a calculation of a deposition time during which the thin film is deposited, and a controller for calculating a deposition time by using the EPD information, and for controlling the sputter device based on the calculated deposition time.

Abstract: A liquid tank capable of detecting liquid level when the tank is rotated. The liquid tank includes an airtight vessel to store the liquid; and at least two electrodes installed inside the airtight vessel. The distal ends of the electrodes are positioned at a central volume of the airtight vessel. A fuel cell adopting the liquid tank maintains the liquid level in the tank near 50% of the full level even when the fuel cell is rotated.

Abstract: A critical dimension controlling method in a semiconductor production process includes determining whether a model is to undergo a discontinuous production process when a run is inserted in a semiconductor manufacturing line, applying an offset for said model or a common offset for a model group including said model according to the determination, executing a production process in dependence upon a process variation along with the offset for the model or the common offset for the model group, and measuring an actual critical dimension in the production process. The offset for the model is calculated based on a previously measured actual critical dimension, and the calculated offset for the model is applied to the calculation of the common offset for the model group.

Abstract: A device for manufacturing a display device includes a deposition source; a deposition thickness calculator for calculating a deposition thickness of a deposition material deposited on a substrate; and a controller for controlling a power of a heater which heats the deposition source by comparing the deposition thickness calculated with a reference thickness. The controller controls the power of the heater either at least one time for each substrate on which the thin film is to be deposited or at regular intervals while the deposition material is deposited. Influence of measurement noise that is included in a quartz crystal sensor for measuring a deposition speed may be minimized, and distribution of deposition thickness of an organic light emitting material may be reduced, thereby increasing the yield of the deposition process and producing quality display devices.

Abstract: A fuel tank and a cap device for the fuel tank. The fuel tank is connected to a fuel cell and includes a tank body having a fuel opening and a pin hole for maintaining an inside pressure, a floater positioned on a surface of the fuel stored in the tank body, and an air pipe connected to the pin hole and an upper part of the floater. The cap device includes a cap body having an inside transfer path for connecting an inlet opening for introducing the fuel and an outside transfer pipe, a fixed outer cap including a connector for fixing a discharge opening into which the transfer pipe is inserted, and an elastic opening/closing section in which the cap body is elastically compressible by the connector, and wherein the inside transfer path opens during the compression.

Abstract: A method and an apparatus for controlling the operation of a fuel cell system. The method can include, actively controlling the fuel cell system without a fuel concentration sensor by: measuring an output voltage, an output current, and a temperature of a fuel cell stack; obtaining a first fuel feeding amount corresponding to the measured output values; comparing a reference temperature corresponding to the measured output values with the measured temperature; and obtaining a second fuel feeding amount by compensating the first fuel feeding amount with a value corresponding to difference between the reference temperature and the measured temperature.

Abstract: There are provided a pump of a noise suppression and vibration proof structure and a fuel cell system using the same. The fuel cell system includes at least one electricity generator including an electrolyte membrane and an anode and a cathode attached to the both surfaces of the electrolyte membrane to generate electricity energy by the electrochemical reaction between fuel containing hydrogen and oxidant supplied to the anode and the cathode, a fuel supplying unit including a pump for supplying the oxidant to the electricity generator, and a fixed frame that is provided on a lower frame and to which the pump is fixed. The pump is separated from the lower frame and is fixed to and combined with the fixed frame by the belt-shaped fixing member on the side surface of the fixing frame with a buffering member interposed. Therefore, it is possible to reduce the noise and vibration of the pump.

Abstract: A fuel cartridge coupler to couple a cartridge body storing fuel to a fuel cell system, the fuel cartridge coupler including: a first coupling member arranged in the cartridge body; a second coupling member assembled with the first coupling member in the fuel cell system; a first nozzle assembly including a first fluid path to discharge fuel stored in the cartridge body, the fuel cartridge being elastically supported by the first coupling member and biased by the second coupling member to open and close the first fluid path; and a second nozzle assembly including a second fluid path to inject the fuel passing through the first fluid path into the fuel cell system, the second nozzle assembly being elastically supported by the second coupling member and biased by the first nozzle assembly to open and close the second fluid path.

Abstract: A membrane-electrode assembly for a mixed reactant fuel cell system is provided. The membrane-electrode assembly does not require a separator that physically separates the membrane-electrode assemblies from each other in a stack. The membrane-electrode assembly of the present invention instead includes an electrode substrate that is disposed on a surface of an anode or a cathode of the membrane-electrode assembly. The electrode substrate has a flow path, through which a fuel and an oxidant are supplied. The fuel and oxidant are absorbed into the electrode substrate and further into the anode and the cathode. The fuel and the oxidant are selectively oxidized and reduced in the anode and the cathode, respectively, to produce electricity.

Abstract: A method of controlling a flow rate of fuel in a fuel supply unit of a fuel cell system is provided. The fuel cell system includes a fuel pump, a revolution per minute (RPM) measuring unit, a microcomputer, and a power converter. The method of controlling the flow rate controls the fuel supply unit so as to supply the fuel to a reformer reforming the fuel to generate hydrogen or a stack generating electric energy through a reaction of the fuel and oxygen. The method of controlling the flow rate includes measuring an actual RPM of the fuel pump; comparing the actual RPM to a reference RPM of the fuel pump; and adjusting a driving voltage of the fuel pump on the basis of the comparison result.

Abstract: A stack for a fuel cell includes a first collecting plate having a first electric polarity, a second collecting plate having a second electric polarity different from the first electric polarity, and at least one electricity generator located between the collecting plates. The at least one electricity generator is for generating electric energy due to electrochemical reaction between hydrogen and oxygen to be collected by the collecting plates. Coupling members press the at least one electricity generator in an airtight connection between the collecting plates. A terminal member protrudes from the second collecting plate and is electrically connected to the first collecting plate and insulated from the second collecting plate, such that the terminal member is used as a first terminal having the first polarity. The second collecting plate or a second terminal member may also be used as a second terminal having the second polarity.

Abstract: A virtual measuring device and a method for measuring the deposition thickness of amorphous silicon being deposited on a substrate is disclosed, where the method of measuring the deposition thickness of amorphous silicon includes predicting and adapting operations. In the predicting operation, during a process of depositing the amorphous silicon to a substrate, the deposition thickness is predicted by multiplying a predicted deposition speed to a deposition time by using a prediction model expressing a relationship between a deposition speed and a plurality of process factors that are correlated with the deposition speed obtained from the deposition thickness and the deposition time, and the predicted deposition thickness is compared with the measured deposition thickness, so that the relationship between the plurality of process factors and the deposition speed in the prediction model is compensated according to the comparison difference.

Abstract: A fuel cell system possessing a mixing tank for recovering an unreacted fuel, the mixing tank being capable of effectively condensing a stack emission product without increasing its volume. The mixing tank includes a fuel supply port for supplying a concentrated fuel; a fluid inlet port for supplying a fluid discharged from an external fuel cell stack; a chamber for mixing the concentrated fuel with the fluid discharged from the fuel cell stack; a stack supply port for supplying a mixed fuel in the chamber to the fuel cell stack; and a chamber cooling member for cooling the chamber.