Abstract: A thin film thickness measuring device includes an electron beam generator which irradiates an electron beam onto a target object including a target thin film and a lower film below the target thin film, a detector which detects X-rays emitted from the target object, and a calculation unit which derives a thickness of the target thin film from an intensity of the detected X-rays and includes an X-ray intensity calculator which measures an X-ray intensity of a bulk sample of the target thin film or the lower film, measures an X-ray intensities of target thin films with known thicknesses or lower films below the target thin films with known thicknesses, and measures a third X-ray intensity of a target thin film with an unknown thickness or a lower film below the target thin film with an unknown thickness, a calibration ratio calculator, a calibration data storage, and a thickness calculator.

Abstract: A cleaning solution production system is for cleaning a semiconductor substrate. The system includes a pressure tank, a plasma reaction tank configured to form a plasma in gas bubbles suspended in a decompressed liquid obtained from the pressure tank to thereby generate radical species in the decompressed liquid, a storage tank configured to store a cleaning solution containing the radical species generated in the plasma reaction tank, and a nozzle configured to supply the cleaning solution from the storage tank to a semiconductor substrate.

Abstract: A plasma generator, a cleaning liquid processing apparatus including the same, a semiconductor cleaning apparatus, and a cleaning liquid processing method are provided. The cleaning liquid processing apparatus comprising a bubble formation section configured to lower a pressure of a mixed liquid obtained by mixing a liquid and a gas to form bubbles in the mixed liquid, a plasma generator connected to the bubble formation section and configured to apply a voltage to the mixed liquid to form plasma in the bubbles formed in the mixed liquid, a mixing section connected to the plasma generator and configured to dissolve radicals included in the plasma into the mixed liquid, and a discharge nozzle connected to the mixing section and configured to discharge the mixed liquid to a wafer.

Abstract: A cleaning solution production system is for cleaning a semiconductor substrate. The system includes a pressure tank, a plasma reaction tank configured to form a plasma in gas bubbles suspended in a decompressed liquid obtained from the pressure tank to thereby generate radical species in the decompressed liquid, a storage tank configured to store a cleaning solution containing the radical species generated in the plasma reaction tank, and a nozzle configured to supply the cleaning solution from the storage tank to a semiconductor substrate.

Abstract: A cleaning solution production system is for cleaning a semiconductor substrate. The system includes a pressure tank, a plasma reaction tank configured to form a plasma in gas bubbles suspended in a decompressed liquid obtained from the pressure tank to thereby generate radical species in the decompressed liquid, a storage tank configured to store a cleaning solution containing the radical species generated in the plasma reaction tank, and a nozzle configured to supply the cleaning solution from the storage tank to a semiconductor substrate.

Abstract: A cleaning solution production system is for cleaning a semiconductor substrate. The system includes a pressure tank, a plasma reaction tank configured to form a plasma in gas bubbles suspended in a decompressed liquid obtained from the pressure tank to thereby generate radical species in the decompressed liquid, a storage tank configured to store a cleaning solution containing the radical species generated in the plasma reaction tank, and a nozzle configured to supply the cleaning solution from the storage tank to a semiconductor substrate.

Abstract: A plasma generator, a cleaning liquid processing apparatus including the same, a semiconductor cleaning apparatus, and a cleaning liquid processing method are provided. The cleaning liquid processing apparatus comprising a bubble formation section configured to lower a pressure of a mixed liquid obtained by mixing a liquid and a gas to form bubbles in the mixed liquid, a plasma generator connected to the bubble formation section and configured to apply a voltage to the mixed liquid to form plasma in the bubbles formed in the mixed liquid, a mixing section connected to the plasma generator and configured to dissolve radicals included in the plasma into the mixed liquid, and a discharge nozzle connected to the mixing section and configured to discharge the mixed liquid to a wafer.

Abstract: Disclosed are an imaging method using fluoroquinolone antibiotics and an imaging device for the same, in which biological tissue is stained with Moxifloxacin as one of fluoroquinolone antibiotics, and the stained biological tissue is subjected to fluorescent image-capture through single-photon excitation with either near-ultraviolet or visible wavelength light instead of either a middle-ultraviolet light source or a femtosecond near-infrared laser device, thereby obtaining morphological information of cells in the biological tissue at a high speed without damage.

Abstract: A method for washing of the present invention comprises: a water supply step of supplying water into a tub; a motor actuating step of actuating the motor for rotating a drum provided inside the tub; and a spray step of spraying water into the drum through a gasket nozzle by actuating a pump for circulating the water inside the tub, when the motor stops.

Abstract: A semiconductor manufacturing apparatus may include a chamber accommodating a substrate to be processed, a first electrode providing electric field in the chamber and a second electrode opposing to the first electrode, and a first power transmitting rod connected to one of the first electrode and the second electrode. A conductive stress attenuating unit may be formed in the first power transmitting rod. Methods of manufacturing semiconductor devices using the semiconductor manufacturing apparatus are also disclosed.

Abstract: A method for washing of the present invention, comprises: a turbo wash setting step of setting turbo wash for spraying water into a drum through a spiral nozzle, when laundry rotates while being attached to the drum by a rotation of the drum; a continuous water supply step of supplying water into a tub; and a regular washing step of canceling the turbo wash when a time taken for a water level inside the tub to reach a target level is longer than a target time so that the water is not sprayed through the spiral nozzle when the laundry rotates while being attached to the drum by the rotation of the drum.

Abstract: A washing machine comprises a casing; a tub disposed inside the casing; a drum rotatably provided inside the tub, for accommodating laundry therein; and a spiral nozzle for rotating supplied water in a predetermined direction and then spraying the water into the drum through discharge hole, wherein the spiral nozzle comprises an impingement surface formed in front of the discharge hole so that the water discharged from the discharge hole is distributed by impinging on the impingement surface.

Abstract: A semiconductor manufacturing apparatus may include a chamber accommodating a substrate to be processed, a first electrode providing electric field in the chamber and a second electrode opposing to the first electrode, and a first power transmitting rod connected to one of the first electrode and the second electrode. A conductive stress attenuating unit may be formed in the first power transmitting rod. Methods of manufacturing semiconductor devices using the semiconductor manufacturing apparatus are also disclosed.

Abstract: A method for washing of the present invention, comprises: a turbo wash setting step of setting turbo wash for spraying water into a drum through a spiral nozzle, when laundry rotates while being attached to the drum by a rotation of the drum; a continuous water supply step of supplying water into a tub; and a regular washing step of canceling the turbo wash when a time taken for a water level inside the tub to reach a target level is longer than a target time so that the water is not sprayed through the spiral nozzle when the laundry rotates while being attached to the drum by the rotation of the drum.

Abstract: A washing machine comprises a casing; a tub disposed inside the casing; a drum rotatably provided inside the tub, for accommodating laundry therein; and a spiral nozzle for rotating supplied water in a predetermined direction and then spraying the water into the drum through discharge hole, wherein the spiral nozzle comprises an impingement surface formed in front of the discharge hole so that the water discharged from the discharge hole is distributed by impinging on the impingement surface.

Abstract: A method for washing of the present invention comprises: a water supply step of supplying water into a tub; a motor actuating step of actuating the motor for rotating a drum provided inside the tub; and a spray step of spraying water into the drum through a gasket nozzle by actuating a pump for circulating the water inside the tub, when the motor stops.

Abstract: A plasma generating apparatus having superior plasma generation efficiency that uses a single reaction chamber. The plasma generating apparatus includes a RF generator for providing a RF power, an antenna for generating an electromagnetic field upon receiving the RF power, a reaction chamber for exciting/ionizing a reaction gas via the electromagnetic field, and generating a plasma, and a plasma channel for absorbing the RF power, and allowing a current signal to be induced to the plasma.

Abstract: A plasma generating apparatus having superior plasma generation efficiency that uses a single reaction chamber. The plasma generating apparatus includes a RF generator for providing a RF power, an antenna for generating an electromagnetic field upon receiving the RF power, a reaction chamber for exciting/ionizing a reaction gas via the electromagnetic field, and generating a plasma, and a plasma channel for absorbing the RF power, and allowing a current signal to be induced to the plasma.