Patents by Inventor Won Ick Jang

Won Ick Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6798940
    Abstract: The disclosure concerns to an optical filter for use in an optical communication device such as a multiplexer and demultiplexer. The optical filter is a Fabry-Perot filter that is formed with a silicon substrate by using a silicon micromachining process and a silicon etching process. The optical filters are applied to various optical communication devices, such as multiplexer (MUX) or demultiplexer (DEMUX) In each of the optical communication devices, the optical filters are installed and integrated on the silicon substrate together with input/output optical fibers and collimating lenses, resulting in simplifying the manufacturing process thereof and, hence, in reducing the manufacturing cost thereof. Furthermore, each of the optical filters incorporates therein an actuator so as to be tunable (wavelength-selective) in the optical filtering function and to be capable of filtering more various wavelengths in a range.
    Type: Grant
    Filed: May 9, 2001
    Date of Patent: September 28, 2004
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Myung-Lae Lee, Won-Ick Jang, Chang-Auck Choi, Youn-Tae Kim
  • Patent number: 6531417
    Abstract: The present invention relates to a micro electro mechanical system (MEMS); and, more particularly, to a micro pump used in micro fluid transportation and control and a method for fabricating the same. The micro pump according to the present invention comprises: trenches formed in a silicon substrate in order to form a pumping region including a main pumping region and an auxiliary pumping region; channels formed on both sides of the pumping region; a flow prevention region having backward-flow preventing layers to resist a fluid flow; inlet/outlet regions formed at each of the channels which are disposed on both ends of the pumping region; an outer layer covering the trenches of the silicon substrate and opening portions of the inlet/outlet regions; and a thermal conducting layer formed on the outer layer and over the main pumping region so that a pressure of the fluid in the main pumping region is increased by the thermal conducting layer.
    Type: Grant
    Filed: April 12, 2001
    Date of Patent: March 11, 2003
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Chang-Auck Choi, Won-Ick Jang, Chi-Hoon Jun, Yun-Tae Kim
  • Publication number: 20020081073
    Abstract: The disclosure concerns to an optical filter for use in an optical communication device such as a multiplexer and demultiplexer. The optical filter is a Fabry-Perot filter that is formed with a silicon substrate by using a silicon micromachining process and a silicon etching process. The optical filters are applied to various optical communication devices, such as multiplexer (MUX) or demultiplexer (DEMUX) In each of the optical communication devices, the optical filters are installed and integrated on the silicon substrate together with input/output optical fibers and collimating lenses, resulting in simplifying the manufacturing process thereof and, hence, in reducing the manufacturing cost thereof. Furthermore, each of the optical filters incorporates therein an actuator so as to be tunable (wavelength-selective) in the optical filtering function and to be capable of filtering more various wavelengths in a range.
    Type: Application
    Filed: May 9, 2001
    Publication date: June 27, 2002
    Inventors: Myung-Lae Lee, Won-Ick Jang, Chang-Auck Choi, Youn-Tae Kim
  • Publication number: 20020081866
    Abstract: The present invention relates to a micro electro mechanical system (MEMS); and, more particularly, to a micro pump used in micro fluid transportation and control and a method for fabricating the same. The micro pump according to the present invention comprises: trenches formed in a silicon substrate in order to form a pumping region including a main pumping region and an auxiliary pumping region; channels formed on both sides of the pumping region; a flow prevention region having backward-flow preventing layers to resist a fluid flow; inlet/outlet regions formed at each of the channels which are disposed on both ends of the pumping region; an outer layer covering the trenches of the silicon substrate and opening portions of the inlet/outlet regions; and a thermal conducting layer formed on the outer layer and over the main pumping region so that a pressure of the fluid in the main pumping region is increased by the thermal conducting layer.
    Type: Application
    Filed: April 12, 2001
    Publication date: June 27, 2002
    Inventors: Chang-Auck Choi, Won-Ick Jang, Chi-Hoon Jun, Yun-Tae Kim
  • Publication number: 20020058422
    Abstract: Disclosed is a a method of fabricating a MEMS device by means of surface micromachining without leaving any stiction or residues by etching silicon oxide of a sacrificial layer, which is an intermediate layer between a substrate and a microstructure, rather than by etching silicon oxide of a semiconductor device. The method according to the invention includes the steps of supplying alcohol vapor bubbled with anhydrous HF, maintaining a temperature of the supplying device and a moving path of the anhydrous HF and the alcohol to be higher than a boiling point of the alcohol, performing a vapor etching by controlling a temperature and a pressure to be within the vapor region of a phase equilibrium diagram of water, and removing silicon oxide of a sacrificial layer on a lower portion of the microstructure.
    Type: Application
    Filed: December 29, 2000
    Publication date: May 16, 2002
    Inventors: Won-Ick Jang, Chang-Auck Choi, Chi-Hoon Jun, Youn-Tae Kim, Myung-Lae Lee
  • Patent number: 6342427
    Abstract: A method for forming a micro cavity is disclosed. In the method for forming the cavity, a first layer is formed on a silicon layer and a trench is formed in the silicon layer by selectively etching the silicon layer. A second and a third layers are formed on the trench and on the silicon layer. Etching holes are formed through the third layer by partially etching the third layer. A cavity is formed between the silicon layer and the third layer after the second layer is removed through the etching holes. Therefore, the cavity having a large size can be easily formed and sealed in the silicon layer by utilizing the volume expansion of the silicon or the poly silicon layer. Also, a vacuum micro cavity can be formed according as a low vacuum CVD oxide layer or a nitride layer formed on the etching holes which are partially opened after the thermal oxidation process by controlling the size of the etching holes concerning the other portion of the poly silicon layer.
    Type: Grant
    Filed: December 29, 1999
    Date of Patent: January 29, 2002
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Chang Auck Choi, Chi Hoon Jun, Won Ick Jang, Yun Tae Kim
  • Patent number: 6292084
    Abstract: A fine inductor having a 3-dimensional coil structure is disclosed. The inductor includes an insulating layer having a groove, a plurality of first conductive patterns wherein the respective first conductive patterns cover bottom and both walls of the groove formed in the insulating layer, both ends of the respective first conductive patterns are extended over upper surface of both sides of the groove, and each of the first conductive patterns is disposed at a predetermined space between adjacent first conductive patterns, and a plurality of second conductive patterns wherein one ends of the respective second conductive patterns are connected to the one ends of the first conductive patterns extended over upper surface and the other ends of the respective second conductive patterns are connected to the other ends of the adjacent first conductive patterns extended over upper surface, thereby forming a coil structure together with the first conductive patterns.
    Type: Grant
    Filed: August 20, 1998
    Date of Patent: September 18, 2001
    Assignee: Electronics and Telecommunication Research Institute
    Inventors: Chang Auck Choi, Jong Hyun Lee, Won Ick Jang, Yong Il Lee, Jong Tae Baek, Hyung Joun Yoo
  • Patent number: 6225145
    Abstract: Provided is a method of fabricating a vacuum micro-structure, which is used for an element operating in a vacuum, the method comprising the steps of: (1) entirely etching an epitaxial layer of a silicon substrate having an SOI structure including an upper silicon epitaxial layer, an interlevel insulating layer and a lower silicon bulk layer to form two electrode structures and a floating vibratory structure, and encapsulating them with a vacuum sealing substrate in a vacuum; and (2) etching the silicon substrate having the SOI stricture from the back side to the interlevel insulating layer to open the electrode structures, and forming a metal electrode.
    Type: Grant
    Filed: September 7, 1999
    Date of Patent: May 1, 2001
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Chang Auck Choi, Jong Hyun Lee, Won Ick Jang, Dae Yong Kim
  • Patent number: 6084656
    Abstract: This invention discloses a programmable mask for exposure apparatus which is formed by an integrated pixels of a micro-devices which shut or open a light by an electrical signal. This invention provides a photolithography method by projecting on a silicon wafer a directly designed circuit pattern which is made on a programmable mask fabricated by an integration of many a micro optical shutter devices as a pixels.
    Type: Grant
    Filed: August 28, 1998
    Date of Patent: July 4, 2000
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Chang Auck Choi, Jong Hyun Lee, Won Ick Jang, Yong Il Lee, Jong Tae Baek, Bo Woo Kim
  • Patent number: 5810935
    Abstract: An apparatus for transferring a wafer in a semiconductor manufacturing process, and for carrying a wafer between a cassette and a wafer chuck without an additional tool such as a tripod. The apparatus includes: a holder capable of holding the side of the wafer; a wafer transfer assembly including an actuator of the holder and a detector that detects a malfunction of the holder; and a process reactor having a vacuum exhaust port installed under a wafer chuck so as to guide gas in an axially-symmetric flow pattern. The holder grasps the rounded side of a wafer. Removal of additional tools makes the structure of an overall system more simple and an exhaust port can be installed under the reactor so as to cause processing gas to be guided in an axially-symmetric flow, resulting in an enhancement of the process uniformity.
    Type: Grant
    Filed: November 29, 1995
    Date of Patent: September 22, 1998
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Jong-Hyun Lee, Hyung-Joun Yoo, Boo-Yeon Choi, Won-Ick Jang, Ki-Ho Jang