Patents by Inventor Won Jeong Lee

Won Jeong Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240109858
    Abstract: The present invention relates to a compound capable of lowering the flammability of a non-aqueous electrolyte when included in the non-aqueous electrolyte and improving the life properties of a battery by forming an electrode-electrolyte interface which is stable at high temperatures and low in resistance, and relates to a compound represented by Formula I descried herein, a non-aqueous electrolyte solution and a lithium secondary battery both including the compound, n, m, Ak, and X are described herein.
    Type: Application
    Filed: March 23, 2022
    Publication date: April 4, 2024
    Applicants: LG Chem, Ltd., LG Energy Solution, Ltd.
    Inventors: Jung Keun Kim, Su Jeong Kim, Mi Sook Lee, Won Kyun Lee, Duk Hun Jang, Jeong Ae Yoon, Kyoung Hoon Kim, Chul Haeng Lee, Mi Yeon Oh, Kil Sun Lee, Jung Min Lee, Esder Kang, Chan Woo Noh, Chul Eun Yeom
  • Patent number: 11915782
    Abstract: An electronic device including a memory device with improved reliability is provided. The semiconductor device comprises a data pin configured to transmit a data signal, a command/address pin configured to transmit a command and an address, a command/address receiver connected to the command/address pin, and a computing unit connected to the command/address receiver, wherein the command/address receiver receives a first command and a first address from the outside through the command/address pin and generates a first instruction on the basis of the first command and the first address, and the computing unit receives the first instruction and performs computation based on the first instruction.
    Type: Grant
    Filed: August 20, 2021
    Date of Patent: February 27, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chang Min Lee, Nam Hyung Kim, Dae Jeong Kim, Do Han Kim, Min Su Kim, Deok Ho Seo, Won Jae Shin, Yong Jun Yu, Il Gyu Jung, In Su Choi
  • Patent number: 10723775
    Abstract: The present invention relates to a method for purifying darbepoetin alfa by selectively separating only a structural isoform having a high content of sialic acid from a mixture of structural isoforms of darbepoetin alfa having various contents of sialic acid. Since the method of the present invention is a novel method for purifying darbepoetin alfa which can be conveniently and simply produced, it is possible to remarkably increase productivity due to process efficiency improvement, as well as to yield high purity darbepoetin alfa when mass-producing darbepoetin alfa according to the present invention.
    Type: Grant
    Filed: November 28, 2014
    Date of Patent: July 28, 2020
    Assignee: CJ Healthcare Corporation
    Inventors: Yoon Jung Lee, Kyung Hwa Kim, Yoo Hee Yang, Jung Min Yoo, Se Jun Kim, Ji Hyun Moon, Hoo Keun Oh, Dong Eok Lee, Won Jeong Lee, Jung Rok Lee, Chung Min Lee, Eun Young Choi, Gyong Sik Ha
  • Patent number: 9902753
    Abstract: The present invention relates to a long-acting human growth hormone NexP-hGH protein and its production method. More specifically, it relates to a specific isoform of long-acting human growth hormone NexP-hGH protein in which human growth hormone is fused with a highly glycosylated alpha-1 antitrypsin mutant whereby long-acting properties in vivo are increased.
    Type: Grant
    Filed: June 5, 2013
    Date of Patent: February 27, 2018
    Assignees: CJ HEALTHCARE CORPORATION, ALTEOGEN, INC
    Inventors: Gil Bu Kang, Chung Min Lee, Jee Won Ahn, Dong Eok Lee, Chang Bong Jun, Won Jeong Lee, Sung Yoo Cho, Chi Hye Park, Ki Wan Kim, Yoon Jung Lee, Ji Hyun Moon, Hoo Keun Oh, Young Joon Park, Sang Hyun Lee, Hyoung Taek Lim, Soon Jae Park, Hye Shin Chung, Sang Mee Lee
  • Publication number: 20170022257
    Abstract: The present invention relates to a method for purifying darbepoetin alfa by selectively separating only a structural isoform having a high content of sialic acid from a mixture of structural isoforms of darbepoetin alfa having various contents of sialic acid. Since the method of the present invention is a novel method for purifying darbepoetin alfa which can be conveniently and simply produced, it is possible to remarkably increase productivity due to process efficiency improvement, as well as to yield high purity darbepoetin alfa when mass-producing darbepoetin alfa according to the present invention.
    Type: Application
    Filed: November 28, 2014
    Publication date: January 26, 2017
    Inventors: Yoon Jung Lee, Kyung Hwa Kim, Yoo Hee Yang, Jung Min Yoo, Se Jun Kim, Ji Hyun Moon, Hoo Keun Oh, Dong Eok Lee, Won Jeong Lee, Jung Rok Lee, Chung Min Lee, Eun Young Choi, Gyong Sik Ha
  • Publication number: 20150126715
    Abstract: The present invention relates to a long-acting human growth hormone NexP-hGH protein and its production method. More specifically, it relates to a specific isoform of long-acting human growth hormone NexP-hGH protein in which human growth hormone is fused with a highly glycosylated alpha-1 antitrypsin mutant whereby long-acting properties in vivo are increased.
    Type: Application
    Filed: June 5, 2013
    Publication date: May 7, 2015
    Inventors: Gil Bu Kang, Chung Min Lee, Jee Won Ahn, Dong Eok Lee, Chang Bong Jun, Won Jeong Lee, Sung Yoo Cho, Chi Hye Park, Ki Wan Kim, Yoon Jung Lee, Ji Hyun Moon, Hoo Keun Oh, Young Joon Park, Sang Hyun Lee, Hyoung Taek Lim, Soon Jae Park, Hye Shin Chung, Sang Mee Lee
  • Publication number: 20110204468
    Abstract: Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.
    Type: Application
    Filed: April 26, 2011
    Publication date: August 25, 2011
    Inventors: Jae-ho Song, Chan Park, Young-hoon Park, Sang-il Jung, Jong-wook Hong, Keo-sung Park, Eun-soo Kim, Won-je Park, Jin-Hyeong Park, Dae-cheol Seong, Won-jeong Lee, Pu-ra Kim
  • Patent number: 7955924
    Abstract: Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.
    Type: Grant
    Filed: January 10, 2007
    Date of Patent: June 7, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jae-ho Song, Chan Park, Young-hoon Park, Sang-il Jung, Jong-wook Hong, Keo-sung Park, Eun-soo Kim, Won-je Park, Jin-Hyeong Park, Dae-cheol Seong, Won-jeong Lee, Pu-ra Kim
  • Publication number: 20070161140
    Abstract: Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.
    Type: Application
    Filed: January 10, 2007
    Publication date: July 12, 2007
    Inventors: Jae-ho Song, Chan Park, Young-hoon Park, Sang-il Jung, Jong-wook Hong, Keo-sung Park, Eun-soo Kim, Won-je Park, Jin-Hyeong Park, Dae-cheol Seong, Won-jeong Lee, Pu-ra Kim
  • Patent number: 6504282
    Abstract: The present invention relates to an armature core of a start motor in which in which the depth of a slop in which an insulation member installed in a core is overlapped is deeper than other insulation members by 1.5 through 2.5 times compared to the thickness of an insulation member, and the width of the slot is the same as that of the other slots. There is provided an armature core of a start motor in which a width “a” of the insulation overlapping slot and a width “b” of other slot are same, and a depth “A” of the overlapping slot is 1.5 through 2.5 times of a thickness of the insulation member compared to a depth “B” of the slot, and a groove is formed at an entrance portion of the slot in a structure that a front end and rear end of an insulation member are overlapped and inserted in an armature core of a start motor, and one insulation member overlapping slot and a plurality of slots each having a certain width and depth are radially formed.
    Type: Grant
    Filed: April 25, 2001
    Date of Patent: January 7, 2003
    Assignee: Valeo Mando Electrical Systems Korea Limited
    Inventor: Won-Jeong Lee
  • Patent number: 6479944
    Abstract: Disclosed are a plasma display panel, apparatus for fabricating the same, and fabrication process thereof enabling to reduce the time for a product process and prevent panel characteristic reduction and panel damage by preventing the generation of impurity gas and achieving the plates-combination at a room temperature. The present invention includes a passivation layer formation means, a substrate transfer means, a cleaning means, a sealing material coating means, and a discharge gas injection/combination means. The present invention is constructed so as to be isolated from the atmosphere. The constructions of the fabrication process and PDP enables the normal temperature combination/attachment so as to increase product efficiency by reducing a process time and improve product quality by preventing the panel characteristic reduction.
    Type: Grant
    Filed: July 24, 2001
    Date of Patent: November 12, 2002
    Assignee: LG Electronics Inc.
    Inventors: Mi Kyoung Lee, Jun Yong Im, Won Jeong Lee, Nam Yeol Yang
  • Publication number: 20020047587
    Abstract: Disclosed are a plasma display panel, apparatus for fabricating the same, and fabrication process thereof enabling to reduce the time for a product process and prevent panel characteristic reduction and panel damage by preventing the generation of impurity gas and achieving the plates-combination at a room temperature. The present invention includes a passivation layer formation means, a substrate transfer means, a cleaning means, a sealing material coating means, and a discharge gas injection/combination means, The present invention is constructed so as to be isolated from the atmosphere. The constructions of the fabrication process and PDP enables the normal temperature combination/attachment so as to increase product efficiency by reducing a process time and improve product quality by preventing the panel characteristic reduction.
    Type: Application
    Filed: July 24, 2001
    Publication date: April 25, 2002
    Applicant: LG Electronic Inc.
    Inventors: Mi Kyoung Lee, Jun Yong Im, Won Jeong Lee, Nam Yeol Yang
  • Publication number: 20010045789
    Abstract: The present invention relates to an armature core of a start motor in which in which the depth of a slop in which an insulation member installed in a core is overlapped is deeper than other insulation members by 1.5 through 2.5 times compared to the thickness of an insulation member, and the width of the slot is the same as that of the other slots. There is provided an armature core of a start motor in which a width “a” of the insulation overlapping slot and a width “b” of other slot are same, and a depth “A” of the overlapping slot is 1.5 through 2.5 times of a thickness of the insulation member compared to a depth “B” of the slot, and a groove is formed at an entrance portion of the slot in a structure that a front end and rear end of an insulation member are overlapped and inserted in an armature core of a start motor, and one insulation member overlapping slot and a plurality of slots each having a certain width and depth are radially formed.
    Type: Application
    Filed: April 25, 2001
    Publication date: November 29, 2001
    Inventor: Won-Jeong Lee