Abstract: A semiconductor device includes a first interlayer insulating film disposed on a substrate and having a first trench. A first lower conductive pattern fills the first trench and includes first and second valley areas that are spaced apart from each other in a first direction parallel to an upper surface of the substrate. The first and second valley areas are recessed toward the substrate. A second interlayer insulating film is disposed on the first interlayer insulating film and includes a second trench that exposes at least a portion of the first lower conductive pattern. An upper conductive pattern fills the second trench and includes an upper barrier film and an upper filling film disposed on the upper barrier film. The upper conductive pattern at least partially fills the first valley area.

Abstract: A refrigerant cycle pressure control system includes: a heat exchanger cooling boil-off gas received from a storage tank; a refrigerant cycle including a refrigerant circulation line, a refrigerant compressor, and an expander; an inventory tank storing the refrigerant to be charged to the refrigerant cycle; a refrigerant supply line connecting the inventory tank to an upstream side of the refrigerant compressor to replenish the refrigerant cycle with the refrigerant; a refrigerant discharge line connecting a downstream side of the refrigerant compressor to the inventory tank to discharge the refrigerant from the refrigerant cycle to the inventory tank; and a pressure regulation line branched off of the refrigerant discharge line. The refrigerant cycle is depressurized by discharging the refrigerant from the refrigerant cycle through the refrigerant discharge line or the pressure regulation line.

Abstract: The present invention relates to a catalyst for hydrogenation of an aromatic compound, which is capable of greatly reducing the inactivation of a catalyst by using a support including a magnesium-based spinel structure, and a preparation method therefor.

Abstract: An embodiment parallel cell based mobility production system includes a front serial production line which is composed of one or more cells arranged in series and through which vehicles of various types sequentially pass to be processed, a parallel production line provided with a plurality of cells arranged in a matrix form, and a rear serial production line in which the vehicles of various types passed through the parallel production line are sequentially fed.

Abstract: A memory system including a memory device suitable for performing, in stages, a program loop including a program operation and a program verification operation on each page within a memory block selected among a plurality of memory blocks, updating a maximum number of program loops for the selected memory block by comparing a number of program loops on each page, which are performed until the program verification operation is processed as a pass on the page, with a current maximum number of program loops for the selected memory block, and storing the updated maximum number of program loops for the selected memory block as program pass information of the selected memory block; and a controller suitable for managing the selected memory block as a bad block based on the program pass information of the selected memory block.

Abstract: An embodiment parallel cell based mobility production system includes a front serial production line which is composed of one or more cells arranged in series and through which vehicles of various types sequentially pass to be processed, a parallel production line provided with a plurality of cells arranged in a matrix form, and a rear serial production line in which the vehicles of various types passed through the parallel production line are sequentially fed.

Abstract: Disclosed is a memory system including a memory device suitable for performing, in stages, a program loop including a program operation and a program verification operation on each page within a memory block selected among a plurality of memory blocks, updating a maximum number of program loops for the selected memory block by comparing a number of program loops on each page, which are performed until the program verification operation is processed as a pass on the page, with a current maximum number of program loops for the selected memory block, and storing the updated maximum number of program loops for the selected memory block as program pass information of the selected memory block; and a controller suitable for managing the selected memory block as a bad block based on the program pass information of the selected memory block.

Abstract: According to one aspect of the invention, there is provided a method for providing a voice recognition trigger, comprising the steps of: estimating a first distance, which is a distance between a device and a user, on the basis of proximity information detected by the device, and estimating a second distance, which is a distance between the device and a location where a voice detected by the device is uttered, with reference to information on the voice detected by the device; and determining whether the voice detected by the device is an object of voice recognition, with reference to similarity between the first distance and the second distance.

Abstract: A memory system includes: a memory device; and a non-erase block management device suitable for determining, when an erase operation is performed on a first memory block included in the memory device, whether to perform a read operation on a second word line of a second memory block, according to a location of a first word line, which is a target word line for a read operation on the second memory block, wherein the second word line includes a target word line for a dummy read operation.

Abstract: Provided is a controller for controlling a memory device including a plurality of memory blocks. The controller may include a monitoring component suitable for monitoring a memory block usage of the plurality of memory blocks, and storing an actual memory block usage for a predetermined cycle, a memory block usage comparator suitable for calculating a desired memory block usage indicating a maximum memory block usage for the predetermined cycle, and comparing the desired memory block usage to the actual memory block usage, and a background operation manager suitable for performing a background operation according to the memory block usage comparison result.

Abstract: According to one aspect of the invention, there is provided a method for providing a voice recognition trigger, comprising the steps of: estimating a first distance, which is a distance between a device and a user, on the basis of proximity information detected by the device, and estimating a second distance, which is a distance between the device and a location where a voice detected by the device is uttered, with reference to information on the voice detected by the device; and determining whether the voice detected by the device is an object of voice recognition, with reference to similarity between the first distance and the second distance.

Abstract: A memory system may include: a memory device including a memory cell array, the memory cell array including a plurality of scan areas, each of the plurality of the scan areas including at least two group areas, each of the group areas including a flag area storing a flag that represents whether a corresponding group area is programmed or not; and a controller suitable for requesting the memory device to read the flag of each of the group areas a flag when a sudden power-off occurs, and rebuilding at least one of the group areas when at least one of the flags is in an erase state.

Abstract: A memory system includes: a memory device; and a non-erase block management device suitable for determining, when an erase operation is performed on a first memory block included in the memory device, whether to perform a read operation on a second word line of a second memory block, according to a location of a first word line, which is a target word line for a read operation on the second memory block, wherein the second word line includes a target word line for a dummy read operation.

Abstract: A controller which controls an operation of a semiconductor memory device including a plurality of memory blocks. The controller includes a randomizer. The randomizer generates randomized data, based on a block address of a target memory block, and a program-erase count value or the target memory block. Accordingly, the performance of a memory system is improved.

Abstract: An operating method of a controller includes: searching, by using a predetermined read voltage, a valid word line coupled to a memory cell having a predetermined program status, among word lines coupled to a first open memory block of a memory device when a memory system is powered on after a sudden power off (SPO); and reading data from the memory cell coupled to the valid word line, and writing the read data into a second open memory block.

Abstract: A memory device may include: a memory cell array comprising a plurality of search regions, each of the search regions comprising a plurality of group regions, each of the group regions comprising a flag cell, each flag cell comprising information indicating whether the corresponding group region is programmed; a voltage generator suitable for generating a read bias voltage for the memory cell array according to a voltage control signal; and a memory controller suitable for selecting a search region and controlling the voltage generator to adjust the read bias voltage based on information of flag cell of the selected search region when a read command is received, and controlling a read operation for the selected search region based on the adjusted read bias voltage.

Abstract: A memory system may include: a memory device including a memory cell array, the memory cell array including a plurality of scan areas, each of the plurality of the scan areas including at least two group areas, each of the group areas including a flag area storing a flag that represents whether a corresponding group area is programmed or not; and a controller suitable for requesting the memory device to read the flag of each of the group areas a flag when a sudden power-off occurs, and rebuilding at least one of the group areas when at least one of the flags is in an erase state.

Abstract: A memory device may include: a memory cell array comprising a plurality of search regions, each of the search regions comprising a plurality of group regions, each of the group regions comprising a flag cell, each flag cell comprising information indicating whether the corresponding group region is programmed; a voltage generator suitable for generating a read bias voltage for the memory cell array according to a voltage control signal; and a memory controller suitable for selecting a search region and controlling the voltage generator to adjust the read bias voltage based on information of flag cell of the selected search region when a read command is received, and controlling a read operation for the selected search region based on the adjusted read bias voltage.

Abstract: A memory system includes: a memory device including a plurality of blocks each block including a plurality of pages, suitable for performing an operation in response to a command and an address; and a controller suitable for determining whether a block in which a read fail has occurred is an open block including an unprogrammed page, performing a restoration operation for the unprogrammed page of the open block based on at least one of operation temperature information and a read count, when it is determined that the block in which the read fail has occurred is the open block, and generating the command for performing a read retry operation.