Abstract: A silicide layer is formed on a conductive layer in a microelectronic device by forming a first silicide layer on the conductive layer. A second silicide layer is then formed on the first silicide layer, the second silicide layer having a concentration of silicon that is less than the first silicide layer. Preferably, the first silicide layer and the second silicide layer are formed of tungsten silicide. The first silicide layer and the second silicide layer are preferably annealed to form a merged silicide layer. According to another aspect, a contact structure for contacting a microelectronic layer in a microelectronic device is formed by forming an insulation layer on the microelectronic layer, the insulation layer having a contact hole therethrough that exposes a portion of the microelectronic layer. A conductive layer is then formed on the insulation layer, the conductive layer extending through the contact hole to contact the exposed portion of the microelectronic layer.

Abstract: An ion generating apparatus for semiconductor fabricating equipment includes a device for reversing the orientation of a magnetic field. In this manner, the potential energy of a plurality of filaments in the ion generating apparatus are maintained at a substantially equal level, and consequently, asymmetric damage to one of the plurality of filaments due to concentration and collision of the thermal electrons is prevented, thereby prolonging the maintenance cycle of the ion generating apparatus.