Abstract: Provided is a sensing method of a FET-type sensor using electric charge storage engineering. The sensing method comprises the following steps to improve reactivity and selectivity to a gas to be sensed: (a) applying a preset erase voltage (Erase bias) or program voltage (Program bias) to the control gate according to the type of gas to be sensed to change a threshold voltage of the FET transducer and control the charge at an interface between the passivation layer and the sensing material layer; and (b) in the recovery phase where the gas detection reaction is terminated and the original state is returned, applying a pre-bias greater or less than a read voltage to the control gate according to the type of gas detected, and then applying the read voltage to the drain and the source of the FET transducer to increase the desorption rate of the detected gas.

Abstract: Provided is a sensing method of a FET-type sensor using electric charge storage engineering. The sensing method comprises the following steps to improve reactivity and selectivity to a gas to be sensed: (a) applying a preset erase voltage (Erase bias) or program voltage (Program bias) to the control gate according to the type of gas to be sensed to change a threshold voltage of the FET transducer and control the charge at an interface between the passivation layer and the sensing material layer; and (b) in the recovery phase where the gas detection reaction is terminated and the original state is returned, applying a pre-bias greater or less than a read voltage to the control gate according to the type of gas detected, and then applying the read voltage to the drain and the source of the FET transducer to increase the desorption rate of the detected gas.