Patents by Inventor Won Ki JOO

Won Ki JOO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory device and electronic device including insulating patterns with different thermal conductivities
    Patent number: 11189630
    Abstract: A memory device and an electronic device including the same are provided. The memory device includes a first memory cell disposed at an intersection of first and second conductive lines that extend in first and second directions, respectively, a second memory cell spaced apart from the first memory cell by a first distance in the first direction, a third memory cell spaced apart from the first memory cell by a second distance in the second direction, a first insulating pattern disposed between the first memory cell and the second memory cell, and a second insulating pattern disposed between the first memory cell and the third memory cell. The second insulating pattern has a lower thermal conductivity than the first insulating pattern.
    Type: Grant
    Filed: August 27, 2019
    Date of Patent: November 30, 2021
    Assignee: SK hynix Inc.
    Inventors: Dae Gun Kang, Hyun Seok Kang, Deok Lae Ahn, Jae Geun Oh, Won Ki Joo, Su-Jin Chae
  • MEMORY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME
    Publication number: 20200203361
    Abstract: A memory device and an electronic device including the same are provided. The memory device includes a first memory cell disposed at an intersection of first and second conductive lines that extend in first and second directions, respectively, a second memory cell spaced apart from the first memory cell by a first distance in the first direction, a third memory cell spaced apart from the first memory cell by a second distance in the second direction, a first insulating pattern disposed between the first memory cell and the second memory cell, and a second insulating pattern disposed between the first memory cell and the third memory cell. The second insulating pattern has a lower thermal conductivity than the first insulating pattern.
    Type: Application
    Filed: August 27, 2019
    Publication date: June 25, 2020
    Inventors: Dae Gun KANG, Hyun Seok KANG, Deok Lae AHN, Jae Geun OH, Won Ki JOO, Su-Jin CHAE