Abstract: A superjunction semiconductor device with an epitaxial layer having different effective thicknesses and a method of manufacturing the same are disclosed. The superjunction semiconductor device includes an epitaxial layer having different thicknesses in a cell region and a ring region to decrease a breakdown voltage of the cell region relative to a breakdown voltage of the ring region so as to reveal a characteristic of the breakdown voltage of the cell region.

Abstract: Disclosed is a light emitting diode using zinc oxide-aminopyrene core-shell quantum dots capable of improving the purity of blue light emission and securing long lifetime through the characteristic that emission transition of electrons proceeds in aminopyrene by applying the zinc oxide-aminopyrene quantum dots forming a core-shell structure with zinc oxide(ZnO) and 1-aminopyrene to the light emitting diode. The light emitting diode using the zinc oxide-aminopyrene core-shell quantum dots comprises a bule light-emitting layer of the ZnO@1-aminopyrene quantum dots having a core-shell structure in which ZnO quantum dots form a core, and 1-aminopyrene forms a shell.

Abstract: Disclosed are a superjunction semiconductor device and a method of manufacturing the same. More particularly, a superjunction semiconductor device and a method of manufacturing the same include an additional structure that enables smooth current flow in a transition region and/or a ring region of the device, where the current concentrates locally during turn-on/turn-off operations of the device due to insufficient current paths compared to the cell region of the device, thereby improving reverse recovery characteristics and preventing device destruction.

Abstract: Disclosed are a zinc oxide-polycyclic aromatic hydrocarbon quantum dot capable of blue light emission in which ZnO is combined with a polycyclic aromatic hydrocarbon having a blue light emitting characteristic to realize a quantum dot of a core-shell structure and electron emission transition is induced to proceed within the polycyclic aromatic hydrocarbon so that the purity of blue light emission is improved, and a manufacturing method thereof. The zinc oxide-polycyclic aromatic hydrocarbon quantum dot capable of blue light emission includes a core-shell structure of zinc oxide-polycyclic aromatic hydrocarbon (ZnO-PAH) quantum dot in which the ZnO quantum dot and the PAH are combined, the ZnO-PAH quantum dot includes an energy level in a form of a Type II structure or a quasi-Type II structure.

Abstract: Disclosed are a flexible transparent electrode structure, a method for preparing the same, and an organic optoelectronic device using the same. The flexible transparent electrode structure includes: a flexible substrate; a thin film laminate of a triple-layer structure formed on both sides of the flexible substrate; and a transparent electrode formed on the thin film laminate of a triple-layer structure provided on one side of the flexible substrate, wherein the thin film laminate of a triple-layer structure includes a SiNx thin film, a SiOxNy thin film and a SiOx thin film formed sequentially on the flexible substrate. The flexible transparent electrode structure has superior light transmittance, water permeation resistance and oxygen permeation resistance, which can improve the electrical properties of an organic optoelectronic device.

Abstract: Disclosed are a superjunction semiconductor device having a floating region and a method of manufacturing the same. More particularly, a superjunction semiconductor device having a floating region and a method of manufacturing the same are disclosed, in which a floating region including first conductivity type impurities is between adjacent pillars in a ring region, so that an electric field can easily expand in the ring region under an N-rich condition, thereby improving breakdown voltage (BV) characteristics and ensuring device stability.

Abstract: A superjunction semiconductor device with an epitaxial layer having different effective thicknesses and a method of manufacturing the same are disclosed. The superjunction semiconductor device includes an epitaxial layer having different thicknesses in a cell region and a ring region to decrease a breakdown voltage of the cell region relative to a breakdown voltage of the ring region so as to reveal a characteristic of the breakdown voltage of the cell region.

Abstract: Disclosed is a zinc oxide-based quantum dot aggregate capable of emitting white light is a mixture of a zinc oxide quantum dot and a zinc oxide-graphene quantum dot, in which the zinc oxide quantum dot emits yellow light when being irradiated with an excitation wavelength shorter than a wavelength corresponding to an energy band gap of the zinc oxide quantum dot, the zinc oxide-graphene quantum dot is in a form in which a zinc oxide quantum dot is bound with graphene via a Zn—O—C bond and emits blue-based light, and white light emission is possible through color rendering of yellow light emission by the zinc oxide quantum dot and blue-based light emission by the zinc oxide-graphene quantum dot.

Abstract: A filament type light emitting bulb including a base, a light transmitting globe coupled to a front opening of the base, a pair of leads, and a plurality of light emitting devices, said one of the light emitting devices includes a non-conductive substrate; a first light emitting diode chip, a second light emitting diode chip and nth, where n?1, light emitting diode chip mounted on the upper surface of the non-conductive substrate and each comprising input and output ends; two connection means including a first connection mean adjacent to the first light emitting diode chip connected an input terminal and a second connection mean adjacent to the nth light emitting diode chip connected an output terminal; two extending terminals connected the first connection mean and the second connection mean respectively; and a light transmitting encapsulant covered the non-conductive substrate, the two connection means and partially covered the two extending terminals, wherein the nth light emitting diode chip formed a firs

Abstract: Disclosed is a zinc oxide-based quantum dot aggregate capable of emitting white light is a mixture of a zinc oxide quantum dot and a zinc oxide-graphene quantum dot, in which the zinc oxide quantum dot emits yellow light when being irradiated with an excitation wavelength shorter than a wavelength corresponding to an energy band gap of the zinc oxide quantum dot, the zinc oxide-graphene quantum dot is in a form in which a zinc oxide quantum dot is bound with graphene via a Zn—O—C bond and emits blue-based light, and white light emission is possible through color rendering of yellow light emission by the zinc oxide quantum dot and blue-based light emission by the zinc oxide-graphene quantum dot.

Abstract: The present disclosure relates to a carbon fiber composition and a fabrication method for high-performance carbon fiber using the same. The method can fabricate high-performance carbon fiber (or graphite fiber) with lowering a graphitization temperature by using graphene carbon fiber composition including nano-sized graphene.

Abstract: The present invention relates to a polarizing film, a method for preparing the same, and a polarizing lens comprising the same, more specifically, to a polarizing film that has excellent optical, mechanical properties, may secure sufficient margin in a processing process, and yet, has excellent color reproducibility and small change with time elapse, a method for preparing the same, and a polarizing lens comprising the same.

Abstract: A filament type light emitting bulb including a base, a light transmitting globe coupled to a front opening of the base, a pair of leads, and a plurality of light emitting devices, said one of the light emitting devices includes a non-conductive substrate; a first light emitting diode chip, a second light emitting diode chip and nth, where n?1, light emitting diode chip mounted on the upper surface of the non-conductive substrate and each comprising input and output ends; two connection means including a first connection mean adjacent to the first light emitting diode chip connected an input terminal and a second connection mean adjacent to the nth light emitting diode chip connected an output terminal; two extending terminals connected the first connection mean and the second connection mean respectively; and a light transmitting encapsulant covered the non-conductive substrate, the two connection means and partially covered the two extending terminals, wherein the nth light emitting diode chip formed a firs

Abstract: Filament type light emitting devices are disclosed. One of the light emitting devices includes a non-conductive transparent substrate, one or more light emitting diode chips arrayed above the upper surface of the non-conductive transparent substrate and each including input and output ends extending toward the non-conductive transparent substrate, and conductive transparent connection portions formed on the upper surface of the non-conductive transparent substrate and electrically connected to the input and output ends. Light transmitting regions are provided without reflectors in the vicinity of the input and output ends between the non-conductive transparent substrate and the light emitting diode chips. Thus, light is emitted backward from the light emitting diode chips through the light transmitting regions and the non-conductive transparent substrate.

Abstract: Filament type light emitting devices are disclosed. One of the light emitting devices includes a non-conductive transparent substrate, one or more light emitting diode chips arrayed above the upper surface of the non-conductive transparent substrate and each including input and output ends extending toward the non-conductive transparent substrate, and conductive transparent connection portions formed on the upper surface of the non-conductive transparent substrate and electrically connected to the input and output ends. Light transmitting regions are provided without reflectors in the vicinity of the input and output ends between the non-conductive transparent substrate and the light emitting diode chips. Thus, light is emitted backward from the light emitting diode chips through the light transmitting regions and the non-conductive transparent substrate.

Abstract: Provided is a vehicle interior material comprising coating layers formed on both surfaces of a veneer layer; a back layer on the coating layer of one surface of the veneer layer; and a front layer on the coating layer of the other surface of the veneer layer. Provided is a method of manufacturing a vehicle interior material comprising steps of: providing a veneer layer; forming coating layers on both surfaces of the veneer layer by applying and drying water-dispersible polyurethane dispersion or water-dispersible acrylic polyurethane dispersion on the both surfaces; pre-forming a real wood film layer prepared by forming the coating layers on the both surfaces of the veneer layer; forming a back layer on the coating layer of one surface of the veneer layer by primary insert molding; and forming a front layer on the coating layer of the other surface of the veneer layer by secondary insert molding.

Abstract: Filament type light emitting devices are disclosed. One of the light emitting devices includes a non-conductive transparent substrate, one or more light emitting diode chips arrayed above the upper surface of the non-conductive transparent substrate and each including input and output ends extending toward the non-conductive transparent substrate, and conductive transparent connection portions formed on the upper surface of the non-conductive transparent substrate and electrically connected to the input and output ends. Light transmitting regions are provided without reflectors in the vicinity of the input and output ends between the non-conductive transparent substrate and the light emitting diode chips. Thus, light is emitted backward from the light emitting diode chips through the light transmitting regions and the non-conductive transparent substrate.

Abstract: An anti-reflective film having a stacked structure including a transparent substrate, a high refraction layer and a low refraction layer, and more specifically, the low refraction layer may include, as a binder, a siloxane compound synthesized by reacting alkoxysilane and organosilane having a fluoroalkyl group.

Abstract: The present invention relates to a polarizing film, a method for preparing the same, and a polarizing lens comprising the same, more specifically, to a polarizing film that has excellent optical, mechanical properties, may secure sufficient margin in a processing process, and yet, has excellent color reproducibility and small change with time elapse, a method for preparing the same, and a polarizing lens comprising the same.

Abstract: Filament type light emitting devices are disclosed. One of the light emitting devices includes a non-conductive transparent substrate, one or more light emitting diode chips arrayed above the upper surface of the non-conductive transparent substrate and each including input and output ends extending toward the non-conductive transparent substrate, and conductive transparent connection portions formed on the upper surface of the non-conductive transparent substrate and electrically connected to the input and output ends. Light transmitting regions are provided without reflectors in the vicinity of the input and output ends between the non-conductive transparent substrate and the light emitting diode chips. Thus, light is emitted backward from the light emitting diode chips through the light transmitting regions and the non-conductive transparent substrate.