Abstract: Provided is a synaptic array structure. The synaptic array structure includes: an isolation insulating layer positioned in a predetermined area on a semiconductor substrate to isolate devices; TFT-type synaptic devices arranged in an array on an isolation insulating layer; and CMOS peripheral circuits provided on the semiconductor substrate. The TFT-type synaptic device includes: a source and a drain positioned on the isolation insulating layer; a semiconductor body positioned between the source and the drain; oxide layers positioned between the semiconductor body and the source/drain; a semiconductor layer for channel; a TFT gate insulating layer; and a TFT gate electrode. The present invention, based on CMOS integration technology, processes TFT-type synaptic devices and CMOS peripheral circuits together, thereby reducing the number of masks and fabrication steps used during the fabricating process.

Abstract: There is provided a method for providing driver's driving information of a user terminal device, including accessing a driving information providing server storing data generated in a driving recording device for a vehicle, receiving driving record data including event record data corresponding to a driving-related event of a driver from the driving information providing server, and displaying a driving-related event occurrence location on a map using the received driving record data. The driving-related event may include at least two or more of a lane departure event, a forward collision possibility event, a rear side collision possibility event, a sudden deceleration event, a sudden acceleration event, a sudden stop event, a sudden start event, and a speeding event.

Abstract: The present invention relates to a memory device comprising biocompatible polymer nanoparticles, and a manufacturing method therefor. The present invention can provide a memory device which can be more efficiently integrated in the organic semiconductor field when applied to a biocompatible electronic device, and can have excellent capacitance by being treated with a silane coupling agent. In addition, the method for manufacturing the memory device, according to the present invention, uses a solution process, and thus a memory device can be manufactured with a very simple method.