Abstract: A phase change memory apparatus includes a phase change memory array in which a plurality of phase change memory devices are arranged, and a pulse generator that supplies a writing current pulse, an erasure current pulse, and a reverse repair current pulse to the phase change memory devices in the phase change memory array. The reverse repair current pulse has opposite direction to the writing current pulse and the erasure current pulse of the phase change memory devices, and is of such a size that resultant Joule heat and electromigration move the elements of the reverse repair current pulse. The reverse repair current pulse has a width equal to or more than a smaller one of duration of a normal writing operation and duration of a normal erasure operation.

Abstract: A super-resolution material for recording and reproducing optical information, comprises a semiconductor material which has a transmittance that increases with an increasing intensity of the incident radiation, and one or more elements selected from the group consisting of nitrogen (N), oxygen (O), carbon (C) and boron (B).

Abstract: The present invention relates to a non-volatile electrical phase change memory device comprising a substrate, a first interlayer dielectric film deposited on the substrate, a bottom electrode layer formed on the first dielectric layer, a second interlayer dielectric film formed on the bottom electrode layer, a phase change material layer deposited on the second interlayer dielectric film, and a top electrode layer formed on said phase change material layer, the bottom electrode layer being brought into contact with the phase change material layer through a contact hole which is formed in the second interlayer dielectric film and filled with the phase change material or bottom electrode material, so that the phase change layer and the bottom electrode layer come into close contact with each other, wherein an interfacial control layer is formed at the interface of the contact hole between the phase change layer and the bottom electrode layer, said interfacial control layer having strong chemical bonds with t

Abstract: The present invention provides a phase change memory cell comprising (GeASbBTeC)1-X(RaSbTeC)X solid solution, the solid solution being formed from a Ge—Sb—Te based alloy and a ternary metal alloy R—S—Te sharing same crystal structure as the Ge—Sb—Te based alloy. A nonvolatile phase change memory cell in accordance with the present invention provides many advantages such as high speed, high data retention, and multi-bit operation.

Abstract: The present invention provides a phase change memory cell comprising (GeASbBTeC)1?x(RaSbTeC)x solid solution, the solid solution being formed from a Ge—Sb—Te based alloy and a ternary metal alloy R—S—Te sharing same crystal structure as the Ge—Sb—Te based alloy. A nonvolatile phase change memory cell in accordance with the present invention provides many advantages such as high speed, high data retention, and multi-bit operation.

Abstract: Disclosed is a waveguide type optical device utilizing a nonlinear refractive index change according to a large 3rd order nonlinear optical phenomenon. The waveguide type optical device includes a signal beam waveguide through which a signal beam propagates; and a pump beam waveguide through which a pump beam propagates, wherein the pump beam waveguide is disposed adjacent to the signal beam waveguide so that the pump beam can be coupled to the signal beam waveguide, the signal beam waveguide is made of nonlinear optical materials with large 3rd order nonlinear optical property and the pump beam waveguide is made of linear optical materials, and the wavelength range of the signal beam is different from that of the pump beam. By such a structure, the pump beam is coupled to one arm of the signal beam waveguide, thereby generating a 3rd nonlinear phenomenon on one arm of the waveguide through which the signal beam passes.

Abstract: The present invention provides a phase change non-volatile memory material comprising a base material and at least one non-metallic light element selected from the group consisting of boron, carbon, nitrogen and oxygen, wherein the base material has a composition which corresponds to either that of congruent melting of the type with a minimum melting point or that of eutectic melting within the range of ±0.15 atomic fraction for each constituent element, thereby having a melting temperature of 600° C. or lower. The phase change non-volatile memory material according to the present invention may be utilized to reduce the electric power needed for reset/set operation and thermal interference between memory cells.

Abstract: The present invention provides a non-volatile phase change memory cell containing an electrode contact layer disposed between a metal electrode layer and a phase change material layer, the electrode contact layer being formed of a transparent conducting oxide-based material which has a high electric conductivity, a low thermal conductivity and a good thermal stability. A non-volatile phase change memory cell according to the present invention may be utilized to reduce the electric power needed for reset and set operation.

Abstract: The present invention provides an optical recording medium in which the spot size of incident laser beam, focused on the medium by a far-field optic system characterized by ? and NA, is further reduced and maintained below the diffraction-limited size by means of material characteristics of the medium while reproducing from and recording on the information layer of the recording medium, thus making it possible to record and reproduce a high density of information exceeding the resolution limit of the optic system. A high density optical recording medium according to the present invention adopts a combination of two different super-resolution layers of mutually complementary optical characteristics with increasing light power.

Abstract: An optical data storage medium comprises a super-resolution (SR) layer consisting of thermoelectric material, said SR layer having light absorption, transmittance and reflectance at the wavelength of an incident light and maintaining a crystalline single phase without a structural or chemical change below the melting temperature of the material. SR readout of data from and/or SR writing of data onto the medium is carried out by way of thermoelectrically induced optical changes within a local area of the SR layer under laser irradiation.

Abstract: Disclosed is a waveguide type optical device utilizing a nonlinear refractive index change according to a large 3rd order nonlinear optical phenomenon. The waveguide type optical device includes a signal beam waveguide through which a signal beam propagates; and a pump beam waveguide through which a pump beam propagates, wherein the pump beam waveguide is disposed adjacent to the signal beam waveguide so that the pump beam can be coupled to the signal beam waveguide, the signal beam waveguide is made of nonlinear optical materials with large 3rd order nonlinear optical property and the pump beam waveguide is made of linear optical materials, and the wavelength range of the signal beam is different from that of the pump beam. By such a structure, the pump beam is coupled to one arm of the signal beam waveguide, thereby generating a 3rd nonlinear phenomenon on one arm of the waveguide through which the signal beam passes.

Abstract: Disclosed in this invention is a phase change optical recording material for a rewritable recording medium with a high speed crystallization and excellent erasibility, which comprises a composition having the formula of: (AaBbCc)x(GeaSbbTec)1−x wherein, A is an element selected from the elements belonging to the IVB group in the periodic table; B is an element selected from the elements belonging to the VB group in the periodic table; C is an element selected from the elements belonging to the VIB group in the periodic table; a, b and c are atomic ratios; x is a mole fraction in the range of 0 to 1; and at least one of A, B and C has a higher atomic number and thus a smaller diatomic bond strength than that of the corresponding element in the GeSbTe part.

Abstract: The present invention is related to a super-resolution composite material for a high density optical information recording medium which consists of a dielectric medium that is transparent at a laser wavelength in use and has a melting point higher than 800° C., and metal particles that are dispersed in the dielectric medium and have low melting points of 150˜450° C. Super-resolution capability of the material is rendered by metal particles that undergo reversible phase changes between melt and crystalline states, accompanied by changes in optical properties. As the dielectric medium, at least one material is selected for use from the group of SiO2, TiO2, ZrO2, HfO2, Al2O3, ZnO, Y2O3, BeO, MgO, WO3, V2O3, SiN, AlN, ZnS, CdS SiC, MgF, CaF2, NaF, BaF2, PbF2, LiF, LaF3, GaP. As the metal particles with low melting points and high boiling points, at least one material is selected for use from a group of Sn, Pb, Bi, Te, Zn Cd, Se, Tl and Po.

Abstract: The present invention provides an optical recording medium in which the spot size of incident laser beam, focused on the medium by a far-field optic system characterized by &lgr; and NA, is further reduced and maintained below the diffraction-limited size by means of material characteristics of the medium while reproducing from and recording on the information layer of the recording medium, thus making it possible to record and reproduce a high density of information exceeding the resolution limit of the optic system.

Abstract: Disclosed in this invention is a phase change optical recording material for a rewritable recording medium with a high speed crystallization and excellent erasibility, which comprises a composition having the formula of:

Abstract: Disclosed in this invention is an optical recording material having high speed crystallization and excellent erasability, which comprises a composition having the formula of: