Abstract: A method and system for monitoring crystallization of an amorphous silicon (a-Si) thin film, and a method of manufacturing a thin film transistor (TFT) by using the method and system are disclosed. The method of monitoring the crystallization of the a-Si thin film includes: irradiating light from a light source onto a monitoring a-Si thin film to anneal the monitoring a-Si thin film; annealing the monitoring a-Si thin film and concurrently measuring a Raman scattering spectrum of light scattered by the monitoring a-Si thin film at set time intervals; and calculating a crystallization characteristic value of the monitoring a-Si thin film based on the Raman scattering spectrum.

Abstract: An organic light-emitting display apparatus includes: a substrate including an emission region and a non-emission region and having a recess formed in at least a portion of the non-emission region; a black matrix disposed in the recess; a thin film transistor disposed on the non-emission region of the substrate and including an active layer, a gate electrode, and source and drain electrodes; a pixel electrode disposed on the emission region of the substrate and electrically connected to one of the source and drain electrodes; an organic emission layer disposed on the pixel electrode; and an opposite electrode disposed on the organic emission layer.

Abstract: A light blocking member including a metal particle and a ceramic material and a display device including the same.

Abstract: A method and system for monitoring crystallization of an amorphous silicon (a-Si) thin film, and a method of manufacturing a thin film transistor (TFT) by using the method and system are disclosed. The method of monitoring the crystallization of the a-Si thin film includes: irradiating light from a light source onto a monitoring a-Si thin film to anneal the monitoring a-Si thin film; annealing the monitoring a-Si thin film and concurrently measuring a Raman scattering spectrum of light scattered by the monitoring a-Si thin film at set time intervals; and calculating a crystallization characteristic value of the monitoring a-Si thin film based on the Raman scattering spectrum.

Abstract: A thin film transistor (TFT), an OLED device having the TFT and a method of fabricating the same and a method of fabricating an organic light emitting diode (OLED) display device that includes the TFT. The method of fabricating a TFT includes providing a substrate, forming a buffer layer on the substrate, forming an amorphous silicon layer pattern on the buffer layer, forming a metal layer on an entire surface of the substrate, forming a semiconductor layer by applying an electrical field to the metal layer to crystallize the amorphous silicon layer pattern, forming source and drain electrodes connected to the semiconductor layer by patterning the metal layer, forming a gate insulating layer on the entire surface of the substrate, forming a gate electrode on the gate insulating layer to correspond to the semiconductor layer and forming a protective layer on the entire surface of the substrate.

Abstract: A light blocking member including a metal particle and a ceramic material and a display device including the same.

Abstract: An organic light-emitting display apparatus includes: a substrate including an emission region and a non-emission region and having a recess formed in at least a portion of the non-emission region; a black matrix disposed in the recess; a thin film transistor disposed on the non-emission region of the substrate and including an active layer, a gate electrode, and source and drain electrodes; a pixel electrode disposed on the emission region of the substrate and electrically connected to one of the source and drain electrodes; an organic emission layer disposed on the pixel electrode; and an opposite electrode disposed on the organic emission layer.

Abstract: An organic light emitting display apparatus includes a substrate, a thin film transistor (TFT) on the substrate, a first electrode on the TFT in each of a plurality of pixels, a first pixel define layer covering edges of the first electrode, the first pixel define layer including at least two layers, a second pixel define layer on the first pixel define layer, an organic emission layer on the first electrode, and a second electrode disposed to face the first electrode.

Abstract: A thin film transistor (TFT), an OLED device having the TFT and a method of fabricating the same and a method of fabricating an organic light emitting diode (OLED) display device that includes the TFT. The method of fabricating a TFT includes providing a substrate, forming a buffer layer on the substrate, forming an amorphous silicon layer pattern on the buffer layer, forming a metal layer on an entire surface of the substrate, forming a semiconductor layer by applying an electrical field to the metal layer to crystallize the amorphous silicon layer pattern, forming source and drain electrodes connected to the semiconductor layer by patterning the metal layer, forming a gate insulating layer on the entire surface of the substrate, forming a gate electrode on the gate insulating layer to correspond to the semiconductor layer and forming a protective layer on the entire surface of the substrate.

Abstract: The present invention provides an improved plasma display panel that includes a plurality of data lines for outputting data signals, and a plurality of scan lines for outputting selection signals. Pixels are formed at intersecting portions of the data lines and the scan lines, and each pixel includes a switching device. Each switching device includes a resistor and a plurality of diodes, The switching device is turned on by one or more selection signals outputted from the scan line. When turned on, the switching device switches a data signal delivered by the data line and turns a light emitting device on. The light emitting device is configured by combining a static induction transistor with an organic EL device (OLED).

Abstract: The present invention discloses a triodic rectifier switch (TRS) having two diodes and one resistor. Each of the two diodes includes first and second electrodes, the first electrode made of a material having a work function of more than 4.5 eV (electron volts), the second electrode made of a material having a work function of less than 4.5 eV, and a semiconductor layer formed between the first and second electrode. The first electrode is made of a material selected from a group including indium tin oxide, Ni, Se, Pt, Os, Ir, Pd, Au, Cu, Ge, Be, Te, and Mo, and the second in electrode is made of a material selected from a group including K, Na, Ca, Li, Mg, In, Ta, Pb, Ag, Al, Zn, Sn, Fe, and Cr. The first and second electrodes may also have multiple layers.

Abstract: The present invention discloses a triodic rectifier switch (TRS) having two diodes and one resistor. Each of the two diodes includes first and second electrodes, the first electrode made of a material having a work function of more than 4.5 eV (electron volts), the second electrode made of a material having a work function of less than 4.5 eV, and a semiconductor layer formed between the first and second electrode. The first electrode is made of a material selected from a group including indium tin oxide, Ni, Se, Pt, Os, Ir, Pd, Au, Cu, Ge, Be, Te, and Mo, and the second in electrode is made of a material selected from a group including K, Na, Ca, Li, Mg, In, Ta, Pb, Ag, Al, Zn, Sn, Fe, and Cr. The first and second electrodes may also have multiple layers.